1,5-二苯基-3-联苯基-2-吡唑啉的荧光光谱行为研究

吡唑啉衍生物具有优异的空穴传输性能和光致发光性能。本文采用荧光光谱法研究了化合物1,5-二苯基-3-联苯基-2-吡唑啉(DBP)的荧光光谱行为。DBP有较强的荧光发射,其光谱行为受溶剂极性和酸度影响显著。随着溶剂极性增加,DBP的荧光发射峰明显红移,其激发态与基态的偶极矩差值增大,发生了分子内电荷转移。在强酸性条件下,DBP的荧光被显著猝灭,量子产率降低。另外,受体分子芴酮或三硝基芴酮能有效猝灭DBP的荧光,其猝灭机理为动态猝灭,两者发生了较强的分子间光诱导电荷转移。DBP与三硝基芴酮间的电荷转移作用明显大于芴酮。     

关于量子体系的高效相干能量转移的最优初始化的研究

For an energy transfer network, the irreversible depletion of excited electron energy occurs through either an efficient flow into an outer energy sink or an inefficient decay. With a small decay rate, the energy transfer efficiency is quantitatively reflected by the average life time of excitation energy before being trapped in the sink where the decay process is omitted. In the weak dissipation regime, the trapping time is analyzed within the exciton population subspace based on the secular Redfield equation. The requirement of the noise-enhanced energy transfer is obtained, where the trapping time follows an exact or approximate 1/Γ-scaling of the dissipation strength Γ. On the opposite side, optimal initial system states are conceptually constructed to suppress the 1/Γ-scaling of the trapping time and maximize the coherent transfer efficiency. Our theory is numerically testified in four models, including a biased two-site system, a symmetric three-site branching system, a homogeneous onedimensional chain, and an 8-chromophore FMO protein complex.     

旋转双棱镜光束指向控制技术综述

旋转双棱镜系统通过两棱镜的共轴独立旋转改变光的传播方向,可用于调整光束或视轴指向。与传统的两轴、三轴式光电平台相比,基于旋转双棱镜设计的光束或视轴调整装置具有精度高、结构紧凑、动态性能好等优点,已成为传统光电平台的有益补充。本文分析了双棱镜系统的光束指向调整机制;介绍了国内外相关基础研究的热点问题,主要涉及光束转向机制、光束扫描模式、棱镜回转控制以及棱镜引起的光束变形、成像色差、成像畸变的研究。文中描述了该项技术的应用进展,给出了利用该项技术开发的典型产品以及该项技术在激光光束指向调整和目标搜索、识别与跟踪成像方面的应用。最后,探讨了旋转棱镜在扫描模式、光束质量、成像色差与畸变、回转控制等方面面临的技术难题,并对其发展趋势进行了展望。     

同步扫描－固体基质室温磷光法同时测定痕量对位三联苯和间位三联苯的研究

本文提出了一种新的测定间三联苯和对三联苯的同步扫描－ＳＳ－ＲＴＰ法。固体基质选用慢速定量滤纸，重原子盐为Ｔｌ２ＳＯ４。以激发单色器和发射单色器的波长差△λ＝１８０ｎｍ进行同步扫描，其同步特征峰间三联苯为４５０ｎｍ，对三联苯为４９０ｎｍ（均指发射波长）。间三联苯可直接由该特征峰的高度进行定量测定。对三联苯在４９０ｎｍ处的特征峰略受间三联苯同步拖尾的影响，其峰值信号需加校正。间三联苯和对三联苯的线性范围分别为０．４６～９２ｎｇ／斑点和０．４６～４６ｎｇ／斑点     

(n,n)-(2n, 0)碳纳米管异质结的扭转力学特性

相近直径的锯齿型和扶手椅型碳纳米管可以共轴组合形成5-7碳环交替出现的柱形对称异质结. 本文利用分子动力学方法研究了直径相近且等长锯齿型和扶手椅型碳纳米管形成的(n, n)-(2n, 0)结在扭转过程中的扭矩和轴向应力随扭转角度的变化规律以及应力传递过程. 研究发现, (n, n)-(2n, 0)结扭转应变在达弹性限度内不会产生轴向应力, 该效应对基于碳纳米管扭转特性的纳米振荡器件的设计具有重要意义.     

碳纳米管阵列水渗透性质的研究

碳纳米管阵列组成的碳纳米管分子膜在生物学分子器件等方面有重要应用. 本文利用分子动力学方法计算研究水分子对(11, 11)碳纳米管阵列的渗透过程. 结果发现, 只有当阵列间隙面积大于57.91 Ų时, 水分子才能进入阵列间隙中, 并揭示了碳管内部、阵列间隙内水分子结构随相邻碳管间距变化的演化趋势以及管内外水分子电偶极矩的分布特性.     

Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

高效液相色谱法测定过氧化氢工作液中2-乙基蒽醌、2-戊基蒽醌及其氢化物

建立高效液相色谱法快速测定过氧化氢工作液中2-乙基蒽醌、2-戊基蒽醌及其氢化物含量的方法.选择ZorbaxXDB–C18色谱柱(250 mm×4.6 mm,5μm)为分离柱,以甲醇–水溶液(体积比为75:25)为流动相,流量为0.8 mL/min,柱温为40℃,紫外检测器检测,检测波长为254 nm,外标法定量.2-乙...     

典型卫星轨道辐射环境及在轨软错误率预计模型分析

使用最新版本的Space Radiation 7.0软件对典型卫星轨道(包括地球同步轨道、中地轨道和低地轨道)的空间辐射环境进行提取和计算,分析不同空间天气和屏蔽条件下的轨道离子通量-能量谱和通量-线性能量沉积(LET)谱特点。以一款SOI SRAM为例,结合地面加速器重离子试验获得的单粒子翻转截面-LET值关系曲线,预计该器件的在轨软错误率(SER),并分析关键参数对预计结果的影响规律和内在机理。结果表明,使用Space Radiation软件的四种输入模式获得的预计结果可相差5倍左右;灵敏区厚度的增大导致在轨SER降低数个数量级,原因为灵敏区厚度的设置与灵敏区平均投影面积和符合条件的空间离子通量的大小直接相关;漏斗长度的大小对预计结果有一定的影响。最后,对SER预计模型的适用性和发展趋势进行了讨论。     

Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy

The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.