Realization of Toffoli gate operation using four-level atoms in cavity QED system

This paper proposes a scheme for realization of a three-qubit Toffoli gate operation using three four-level atoms by a selective atom--field interaction in a cavity quantum electrodynamics system. In the proposed protocol, the quantum information is encoded on the stable ground states of atoms, and atomic spontaneous emission is negligible as the large atom--cavity detuning effectively suppresses the spontaneous decay of the atoms. The influence of the dissipation on fidelity and success probability of the three-qubit Toffoli gate is also discussed. The scheme can also be applied to realize an N-qubit Toffoli gate and the interaction time required does not rise with increasing the number of qubits.     

Ronchi光栅光密度的一种测试方法

本文提出利用衍射光栅的反射特性,在自光图像处理系统中对光栅进行实时无损伤检验.这种方法灵敏度高、简便易行,有较高的实用价值.理论与实验结果一致.     

球面高速精磨模的修正

<正> 球面高速精磨模加工面的径向跳动量除依靠机床的跳动控制在0.01mm外,还要依靠基体模的径向定位基面保证主轴螺纹与基体模之间的同轴性。当机床的主轴径向跳动量达不到0.01mm,或机械加工的基体模球面径向跳动达不到适合高速精磨的精度时,可修正基体模球面和高速精磨模加工面,达到所要求的精度。修正的方法是先将基体模装到高速精磨机床主轴上,用百分表测量出要修正最大值方向,在钢球模与基体模用金刚砂对磨时,在最大值方向用手加压(凸凹基体模置钢模之上),加压之后再对     

稀磁半导体Cd_（1－x）Fe_xTe的磁光光谱

在７０－３００Ｋ温度范围内测量了组分ｘ为０．０１和０．０４的Ｃｄ１－ｘＦｅｘＴｅ及ＣｄＴｅ的法拉第效应随入射光子能量的变化，首次获得了Ｃｄ１－ｘＦｅｘＴｅ在布里渊区Γ点和Ｌ点的有效ｇ因子及其与温度的关系。给出了Ｆｅ２＋离子与载流子间的ｓｐ－ｄ交换作用常数Ｎ０（β－α）＝（－１．５７±０．０３）ｅＶ。     

拉曼光谱分析青铜器本体中锈蚀产物

青铜器锈蚀研究能够揭示出青铜器腐蚀机理, 为制定科学的保护措施提供重要的参考资料。目前, 青铜器锈蚀研究主要从其外部锈蚀产物入手, 通过锈蚀组成结构分析, 探讨其腐蚀机理。本文选择了保存较好青铜器本体样品进行了内部锈蚀情况研究。首先采用金相制备技术, 通过打磨、抛光和超声清洗处理后, 制备了断面相组织形态清晰的24件秦早期青铜器青铜本体样品。然后利用共聚焦显微拉曼光谱仪对样品夹杂物进行了光谱学研究, 发现其物相为PbCO3和PbO及Cu2O, 都属于常见的青铜合金腐蚀产物。样品金相组织中圆形或者大面积无规则亮灰色区域为Cu2O, 反映出青铜器表面不仅易于形成一定厚度Cu2O锈蚀层, 在相界之间也容易发生氧化反应生成Cu2O, 存在合金内部和外部同时发生腐蚀生成赤铜矿锈蚀的情况。此外, 拉曼光谱分析显示黑灰色物质主要为铅腐蚀产物——PbCO3和PbO, 反映出铅元素的腐蚀过程: Pb→PbO→PbCO3。在铸造态青铜合金组织中, 铅一般呈近圆形颗粒状态分布在相界之间。青铜器内部分布的铅颗粒在土壤埋藏环境中会发生氧化反应生成PbO, 再与地下水中溶解的CO2－3发生化学反应生成比较稳定的PbCO3。结果表明: 外界腐蚀因素(水、溶解氧和碳酸根等)能够通过合金中相界间通道进入青铜器内部, 在相界表面逐步发生反应形成以金属氧化物为主的腐蚀产物。     

用按需滴定技术制备聚合物微透镜阵列

采用高分子聚合物-单体混合溶液按需滴定-原位热聚合的新方法制作折射微透镜及其阵列.制备透镜的主要材料是甲基丙烯酸甲酯及其聚合物.制备的微透镜直径在1 mm～3 mm范围内,矢高为100 μm～400 μm,透镜焦距在1 mm～4 mm之间.所得微透镜在波长λ=1.55 μm处有很好的光学透过率(90%),适于作光通信耦合器件.用AFM-Ⅱ型原子力显微镜测得微透镜阵列的表面粗糙度Ra约等于0.9 nm,并通过液体的表面张力理论分析了微透镜的形成机理.     

Oeffner展宽器高倍率展宽脉冲的理论与实验研究

在理论上分析了Oeffner展宽器的色散特性，给出了展宽脉冲随Oeffner展宽器系统参数变化的关系．据此在实验上建立了一台Oeffner飞秒展宽器系统，将19fs的种子脉冲无色差展宽至605ps，测量结果与理论计算一致．     

Coherence Measurement of White Light Emission from Femtosecond Laser Propagation in Air

Strong white light emission is observed from femtosecond laser propagation in air. The divergence angle of the white light emission is measured to be about 5mrad. Young＇s double-slits and a Michelson interferometer are used to investigate the coherence. The wavelength components of the white light emission are identified to have a good spatial coherence and a coherence time of about 0.5ps.     

BIFURCATION DIAGRAMS OF SYSTEM =-y δx lx~2 ny~2,=x ax~2

Ｗｅｃｏｎｓｉｄｅｒｔｈｅｑｕａｄｒａｔｉｃｓｙｓｔｅｍｏｆｔｙｐｅ（Ｉ）ｍ＝０ａｃｏｒｄｉｎｇｔｏｔｈｅｃｌａｓｉｆｉｃａｔｉｏｎｏｆ［１］．Ｗｉｔｈｏｕｔｌｏｓｏｆｇｅｎｅｒａｌｉｔｙ，ｗｅｍａｙａｓｕｍｅｔｈａｔｔｈｅｓｙｓｔｅｍｉｓｔａｋｅｎ...     

不同LET碳离子束辐照拟南芥干种子的当代损伤效应

本研究以拟南芥（Columbia野生型）干种子为材料,利用兰州重离子研究装置（HIRFL）产生的碳离子束对材料进行辐射处理,统计其存活率、根长、下胚轴长及每果荚种子数,以探讨不同传能线密度（Linear Energy Transfer,LET）的碳离子束辐照对拟南芥当代损伤效应的影响。结果表明,在相同LET辐射条件下,随着辐射剂量的增大,拟南芥的存活率、根长、下胚轴长度、每果荚种子数都呈现下降趋势。在相同剂量不同LET辐射处理情况下,随着LET的增大,存活率、根长、下胚轴长、每果荚种子数都显著下降,可见高LET辐射严重抑制了拟南芥的生长和发育。研究表明,当LET为50 keV/μm时,碳离子束辐射拟南芥干种子对应的最佳诱变剂量为200 Gy,为后续开展碳离子束辐射的诱变效率研究奠定了前期基础。Aimed to study the biological effects of carbon ion beams with different linear energy transfer (LET) values provided by Heavy Ion Research Facility in Lanzhou (HIRFL), dry seeds of Arabidopsis thaliana (Columbia-WT) were irradiated and a series of biological effects of postembryonic development, such as survival rate, primary root length, hypocotyls length and number of seeds per silique, were investigated. The results showed that, under the radiation condition of the same LET value, the survival rate, root length, hypocotyls length and number of seeds per silique were decreased with the increasing dose. In addition, under the radiation conditions with different LET values, but same dose, the extent of the decline of the survival rate, root length, hypocotyls length and number of seeds per silique were reinforced with the increasing LET. It was also found that high LET radiations inhibited the subsequent growth and development of Arabidopsis thaliana severely. In brief, it was suggested that the optimum dose of carbon ion beam with 50 keV/μm value on Arabidopsis thaliana dry seeds was 200 Gy. This research complemented the preliminary theoretical foundation for the comparative study of the highest mutation efficiency of carbon ion beam irradiations at IMP, CAS(Institute of Modern Physics, Chinese Academy of Sciences).