β-delayed neutron decay of 21N

The β-delayed neutron and γ spectra of neutron-rich nucleus ²¹N using β-γ and β-n coincidence measurements were presented in this paper. Thirteen new neutron groups ranging from 0.28 MeV to 4.98 MeV and with a total branching ratio 88.7±4.2% were observed. One γ transition among the excited states of ²¹O, and four γ transitions among the excited states of ²⁰O were identified in the β decay chain of ²¹N. The ungated half-life of 83.8±2.1 ms was also determined for ²¹N.     

基于SOI非对称马赫曾德尔结构的集成矢量和微波光子移相器(英文)

设计和分析了一种基于SOI(绝缘体上的硅)脊型波导非对称马赫曾德尔结构的集成矢量和微波光子移相器。对于10 GHz的微波信号,设定非对称两臂的长度差为3 983μm时,其相应的时间延迟约为47 ps。分别在两臂上集成了一个热光可调谐可变光衰减器用于光学调谐,当衰减单元的折射率在0～6×10-3变化时,实现了10 GHz微波信号在0～180°的相位调谐。该器件尺寸小、结构紧凑,易于实现片上集成,在光控相控阵雷达中很有应用前景。     

X射线背光成像的实现

为了实现对惯性约束聚变的诊断,获取聚爆过程中高温等离子体X射线能谱信息和内爆靶丸的二维空间分辨信息,利用晶体的布拉格衍射特性设计制作了球面晶体分析器,晶体弯曲半径为125 mm。为了验证球面晶体的空间分辨能力,搭建了背光成像平台进行了背光成像实验,石英球面晶体为衍射核心元件,接收装置IP板得到了Cu靶的二维空间分辨信息,基于石英球面晶体的成像平台得到的空间分辨率约为100 μm。     

Improving breakdown voltage performance of SOI power device with folded drift region

A novel silicon-on-insulator(SOI) high breakdown voltage(BV) power device with interlaced dielectric trenches(IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer,which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges(holes) at the corner of IDT.The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V.     

IMDD-OFDM系统的低开支、高准确度信道估计方法

提出一种应用于强度调制直接检测光正交频分复用(IMDD-OFDM)传输系统的低开支、高准确度的信道估计算法.该算法充分考虑系统噪声特性,利用梳状导频插入结构,结合符号间平均与子载波间频域线性插值的思想,在低开支导频条件下实现较高的估计准确度.仿真和理论推导结果表明:与传统平均算法和直接线性插值算法相比,基于梳状导频先平均后线性插值的算法估计出来的信道特性更能接近实际信道的.实验结果表明:在误码率为3.8×10~(-3)处,本文所提出的算法仅使用0.78%导频开支即可与使用20%导频开支的平均算法获得相同的接收灵敏度;同时,与传统估计算法相比,该算法与导频开支无关,能较好抗系统中的高斯噪声,获得与真实信道较为接近的估计性能.     

氩团簇高信噪比13—23nm软x射线辐射谱实验观察

用150fs的掺钛蓝宝石激光系统, 在功率密度约为5×10¹⁵ W/cm²时 激励氩(Ar)团簇，利用具有空间分辨能力的平场光栅谱仪观察到13—23nm波段Ar的软x射线谱，并观察到Ar的11阶离子谱线.在较宽的激光脉宽和较低的激光功率密度情况下，通过激励Ar团簇，获得 了Ar的高阶电离度的实验结果，且谱线的信噪比明显好于光场感应电离的情况，说明团簇的 形成大幅度地提高了激光能量的吸收效率. 关键词： Ar团簇 超短强激光 软x射线辐射     

含碳能源直接制氢的热力学分析与实验研究

本文在对构建的含碳能源直接制氢体系进行热力学分析的基础上,建造了含碳能源直接制氢近零排放定容实验系统,并进行了不同参数下的实验研究。热力学分析表明本文构建的系统不仅存在合适的反应条件,而且在此反应条件下可以实现体系的热平衡。实验结果表明了该系统的可行性,实现了气态产物中氢含量大于80％,二氧化碳及一氧化碳含量均小于0.1％,达到了直接制氢和近零排放的目标。     

35MeV/u36Ar+124Sn反应中类弹产物的同位素分布特性

测量了35MeV/u³⁶Ar+¹²⁴Sn反应中5.3°处类弹产物的同位素分布,观察到随着出射动能的增加,产物的平均中质比逐渐减小而接近弹核的平均中质比.同位旋相关的量子分子动力学计算表明,随着反应时间的增加,类弹产物的平均出射动能逐渐减小而平均N/Z值则逐渐增大.另外,碰撞参数也影响类弹产物的同位素组成:随着碰撞参数的减小,类弹产物的平均N/Z值减小.     

一种新颖结构的高温超导信道滤波器设计

文章提出了一种新颖结构的高温超导信道滤波器设计方法,采用Sonnet软件进行微带电路的全波电磁场仿真.设计了一个一分二的高温超导信道滤波器,信道滤波器工作在S波段,每个信道的相对带宽约为0.4‰,采用的材料为多源热共蒸发法制备的DyBCO双面超导薄膜,衬底为0.5mm厚度的氧化镁.本文给出了本信道滤波器的等效电路、理论曲线、耦合参数和模拟仿真结果.     

Structural evolution study of additions of Sb_2S_3 and CdS into GeS_2 chalcogenide glass by Raman spectroscopy

The structures of pseudo-binary GeS_2–Sb_2S_3, GeS_2–CdS, Sb_2S_3–CdS, and pseudo-ternary GeS_2–Sb_2S_3–CdS chalcogenide systems are systematically investigated by Raman spectroscopy. It is shown that a small number of [S_3Ge–GeS_3]structural units(SUs) and-S-S-/S8 groups exist simultaneously in GeS_2 glass which has a three-dimensional continuous network backbone consisting of cross-linked corner-sharing and edge-sharing [GeS_4] tetrahedra. When Sb_2S_3 is added into GeS_2 glass, the network backbone becomes interconnected [GeS_4] tetrahedra and [SbS_3] pyramids. Moreover, Ge atoms in[S_3Ge–GeS_3] SUs tend to capture S atoms from Sb_2S_3, leading to the formation of [S_2Sb–SbS_2] SUs. When CdS is added into GeS_2 glass, [Cd_4GeS_6] polyhedra are formed, resulting in a strong crystallization tendency. In addition, Ge atoms in[S_3Ge–GeS_3] SUs tend to capture S atoms from CdS, resulting in the dissolution of Ge–Ge bond. Co-melting of Sb_2S_3 or CdS with GeS_2 reduces the viscosity of the melt and improves the homogeneity of the glass. The GeS_2 glass can only dissolve up to 10-mol% CdS without crystallization. In comparison, GeS_2–Sb_2S_3 glasses can dissolve up to 20-mol% CdS,implying that Sb_2S_3 could delay the construction of [Cd_4GeS_6] polyhedron and increase the dissolving amount of CdS in the glass.