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We demonstrate a passively Q-switched Nd:KLu W laser with a semiconductor sat urable absorber mirror (SESAM) at wavelength 1070 nm. At a pump power of 1.3 W, the pulse width is measured to be about 17ns with repetition rate of lOkHz and with the average output power of 260roW. To our knowledge, this is the first demonstration of Nd:KLuW used for passively Q-switched laser with an SESAM. 相似文献
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We report a new way, i.e. double-end-pumping, to extend the stability range of a laser resonator, in advantage of making the thermal loading be effectively divided between the ends of the laser crystal to reduce the thermal effect, thus to extend the stability range. Using this new way, we experimentally obtained a 2.7-W cw laser source at 671 nm by intracavity frequency doubling of 1342nm ofa Nd:YVO4 laser based on the nonlinear crystal LIB3O5. The maximum pump power is 28 W, which is higher than 13 W of the single-end-pumping. 相似文献
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报道了双Nd:YAG棒串接V型折叠腔腔内KTP和频全固态黄光激光器,得到了3 W连续波589 nm黄光输出.为了提高黄光输出功率,采用了两种手段:一是通过优化腔型设计使得两束基频在腔内达到了最佳的空间重合,二是通过选择合适大小的二极管激光器的抽运功率使得两束基频在腔内达到了最佳的功率配比.
关键词:
全固态激光器
Nd:YAG激光器
黄光
腔内和频 相似文献
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AgX:I微晶的光电子衰减时间分辨谱测量 总被引:1,自引:0,他引:1
利用高时间分辨的微波吸收薄膜介电谱测量技术,采用自行设计的光电子时间分辨谱测量装置(时间分辨率达到1 ns),精确地测量了不同Agx:I材料在35 ps超短脉冲激光曝光后产生的自由光电子和浅俘获光电子随时间衰减的光电子衰减时间分辨谱,分析了不同的[I-]掺杂条件对材料光电子时间特性的影响关系,得到了影响Agx:I微晶光电子时间特性的最佳[I-]掺杂条件。对立方体AgCl乳剂来说,[I-]含量0.5%,掺杂位置80%Ag处时,乳剂的光电子寿命最长。而对T-颗粒AgBr乳剂而言,[I-]含量3%时,乳剂的光电子寿命最长。碘化物对光电子寿命增大的影响是由于碘化物离子可以作为缺陷电子陷阱,这就使得银簇上的反应减小,当碘化物大于3%时,这一效应由于碘化物团簇的形成而消失。 相似文献
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A high power continuous-wave (CW) diode-pumped Nd:YAG laser operated in heat capacity mode is demonstrated by use of two identical highly efficient diode-pumped laser heads placed in a plane-plane resonator.The laser heads are uniformly pumped with a five-fold symmetrical side-pumping configuration, and each head is able to output maximum output power of 2200 W at 808 nm.Under a total pump power of 4290 W,the output power of the laser at 1064 nm is up to 2277 W,corresponding to an optical-to-optical efficiency of 53.1%. 相似文献
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The influence of K4Fe(CN)6 at various doping concentrations on the photosensitivity of cubic AgC1 microcrysgals has been investigated by using the microwave absorption and phase-sensitive measurement technique. The time behaviour of free photoelectrons in AgCl microcrystals is analysed by using computer simulation as a function of three parameters of shallow electron trap (SET) including doping concentration, trap depth and capture cross-section (CCS).It is found that the three parameters of SET play different roles on the free photoelectron decay time (FDT). After considering the threshold effects of the three parameters and their collective effects, the trap depth value, the CCS value,and the optimal doping concentration of the SET introduced by the dopant K4Fe(CN)6 in cubic AgCl microcrystals can also be determined, and the best photosensitivity of cubic AgCl can be obtained. 相似文献