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采用孪生ZnO (Al2 O3 ∶2 % )对靶直流磁控溅射制备高透过率、高电导率的平面ZnO薄膜 (迁移率为 5 .5 6cm2 /V·s,载流子浓度为 4 .5 7× 10 2 0 cm-3 ,电阻率为 2 .4 6× 10 -3 Ω·cm ,可见光范围 (380～ 80 0nm)平均透过率大于 85 % )。用酸腐蚀的方法 ,可以获得绒面效果 ,而反应气压对绒面效果没有影响 ,薄膜的电学特性没有变化 ,绒面对光散射作用增强 ,导致相对于平面ZnO薄膜的透过率要低一些 (可见光范围平均透过率大于 80 % )。 相似文献
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This paper reports that the optical emission spectroscopy (OES) isused to monitor the plasma during the deposition process ofhydrogenated microcrystalline silicon films in a very high frequencyplasma enhanced chemical vapour deposition system. The OESintensities (SiHsj{*}, H微晶硅 VHF-PECVD 发射光谱学 薄膜物理学 microcrystalline silicon,VHF-PECVD, optical emission spectroscopy 2005-11-09 2005-11-092005-12-12 This paper reports that the optical emission spectroscopy （OES） is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities （Sill^＊, H^＊ and H^＊β） are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6%. The SiH^＊ intensity increases with silane concentration, while the intensities of H^＊α and H^＊β increase first and then decrease. When the substrate temperature increases, the SiH^＊ intensity decreases and the intensities of H^＊α and H^＊β are constant. The correlation between the intensity ratio of IH^＊α/ISiH^＊ and the crystalline volume fraction （Xc） of films is confirmed. 相似文献
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本文国内首次报道了采用高压RF-PECVD技术沉积本征微晶硅材料的结果.实验表明,增大等离子体激发功率和减小硅烷浓度都能够使薄膜材料由非晶硅逐渐向微晶硅转变,而结构上的改变使得电学特性也随之改变.通过工艺参数的优化和纯化器的使用,有效地控制了氧的掺杂,在较高的生长速度下得到了器件质量级的本征微晶硅材料.将实验得到的微晶硅作为太阳电池光吸收层,在没有ZnO背电极和没有优化窗口层材料以及p/i界面时,电池的效率达到5.22;,这进一步表明本征微晶硅材料的良好性能. 相似文献
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The study of a new n/p tunnel recombination junction and its application in a-Si：H/μc-Si：H tandem solar cells 总被引：1，自引：0，他引：1 
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下载免费PDF全文 This paper reports that a double N layer (a-Si:H/μc-Si:H) is used to substitute the single microcrystalline silicon n layer (n-μc-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current-voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction. 相似文献
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This paper reports that high-rate-deposition of microcrystallinesilicon solar cells was performed by very-high-frequencyplasma-enhanced chemical vapor deposition. These solar cells, whoseintrinsic μ c-Si:H layers were prepared by using a different total gasflow rate (Ftotal), behave much differently in performance,although their intrinsic layers have similar crystalline volumefraction, opto-electronic properties and a deposition rate of ～1.0~nm/s. The influence of Ftotal on the micro-structuralproperties was analyzed by Raman and Fourier transformed infraredmeasurements. The results showed that the vertical uniformity andthe compact degree of μ c-Si:H thin films were improved withincreasing Ftotal. The variation of the microstructure wasregarded as the main reason for the difference of the J--Vparameters. Combined with optical emission spectroscopy, wefound that the gas temperature plays an important role indetermining the microstructure of thin films. With Ftotalof 300~sccm, a conversion efficiency of 8.11% has been obtainedfor the intrinsic layer deposited at 8.5~AA/s (1~AA=0.1,nm). 相似文献
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微晶硅n-i-p太阳电池中n型掺杂层对本征层结构特性的影响 总被引：1，自引：0，他引：1
采用高压射频等离子体增强化学气相沉积方法在非晶和微晶两种n型硅薄膜衬底上沉积了一系列不同厚度的本征微晶硅薄膜,研究了不同n型硅薄膜对本征微晶硅薄膜的表面形貌、晶化率和结晶取向等结构特性的影响.结果表明,本征微晶硅薄膜结构对n型掺杂层具有强烈的依赖作用,微晶n型掺杂层能够有效减少n/i界面非晶孵化层的厚度,改善本征微晶硅薄膜的纵向均匀性,进而提高微晶硅n-i-p太阳电池性能.关键词：孵化层微晶硅薄膜纵向均匀性n-i-p太阳电池 相似文献
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实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO ∶Al2O3陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100 nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10-4 Ω·cm关键词：氧化锌氢气流量磁控溅射太阳电池 相似文献
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采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜.利用傅里叶变换红外吸收对制备薄膜进行了结构方面的测试分析.结果表明：随衬底温度的升高,材料 中的氢含量总的趋势下降;傅里叶变换红外吸收和二次离子质谱测试结果都显示薄膜中氧含 量随衬底温度的升高而增加（在1019cm-3量级）;与高衬底温度相 比,低衬底温度制备的材料易于后氧化,这说明低温制备材料的稳定性不好.关键词：甚高频等离子体增强化学气相沉积微晶硅薄膜傅里叶变换红外吸收 相似文献