面向半导体照明的光学

以发光二极管(LED)为核心的半导体照明光源成为世界公认的第三代照明光源.通常基于蓝光LED抽运黄色荧光粉产生白光的方案,因荧光粉的斯托克斯位移和宽光谱,其具有产业化价值的发光效率上升范围受到极大限制.另外,传统封装LED因其朗伯型发光分布和超高亮度会造成严重的眩光以及光分布难以满足照明应用要求从而导致光污染、光浪费,...     

气相色谱-微池电子捕获检测法同时检测饮用水中多种有机污染物

本文建立了气相色谱-微池电子捕获检测法(GC-μECD),同时测定生活饮用水中百菌清、七氯、滴滴涕、六六六、林丹、六氯丁二烯、溴氰菊酯、1,1-二-氯苯、1,2-二氯苯、三氯苯、六氯苯11种有机氯,马拉硫磷、对硫磷、甲基对硫磷、毒死蜱、乐果、敌敌畏6种有机磷,以及硝基苯、2,4,6-三硝基甲苯、1,3-二硝基苯、邻,间,对硝基氯苯、2,4-二硝基氯苯,2,4-二硝基甲苯6种硝基苯类有机物的分析方法.样品经萃取后,采用OV-1701色谱柱(30 m×0.25 mm×0.25μtm)程序升温进行分离,用微池电子捕获检测器(μECD)进行检测,通过保留时间定性,外标法定量.结果表明该方法分离效果好,灵敏度高,选择性强,简便、快速、准确,能够满足同时测定生活饮用水中上述23种有机化合物的需要.     

缺口疲劳门槛值的实验研究

本文报告了对常用高强材料３０ＣｒＭｎＳｉＡ的双边Ｖ型缺口疲劳门槛值进行的实验测量。通过测试结果分析，证实了对不同缺口半径的试样（△Ｋ１／√Ｐ）ｔｈ基本一致的结论。     

纤维板增强钢筋砼缺口梁承载力试验研究

通过对8组24根碳纤维薄板增强钢筋混凝土梁进行三点弯曲试验，探讨碳纤维薄板增强钢筋混凝土缺口梁的破坏过程、极限承载力及其影响因子．研究结果表明：1)碳纤维薄板增强钢筋混凝土缺口梁总是沿着纤维薄板与混凝土的界面发生剥高破坏；2)与无增强梁相比，增强梁的极限来载力可以提高20％一40％．而且当纤维薄板贴长Lc与两支点间距离S之比为0．57左右时增强效果最明显；3)缺口对梁的破坏模式影响较大，而对梁的极限承载力影响不大(下降10％-15％)．     

一种新的测定一维同核全相关的NMR技术

提出一种新的基于MDY混合脉冲的可测定一维同核全相关的核磁共振技术.称为一维自旋回波MDY相干转移(lD-SEMDY)实验.结果表明.它具有下列突出优点:一是不用Z-滤波技术就可以得到纯吸收型的一维全相关谱(lD-TOCSY).与同类技术相比,操作简便.可节省测定时间.应用范围较广;二是所测定亚谱中的信号归属通过改变混合时间和延迟时间可以得到确定;三是相干转移非常有效.远程磁化转移信号的灵敏度比较高,对弱偶合的自旋体系也可进行测定.以甙类化合物为例讨论了它在谱峰高度重叠的有机结构测定中的应用.     

Vertical and Smooth, etching of InP by Cl2／CH4／Ar Inductively Coupled Plasma at Room Temperature

We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using C12/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between C12 and Ctt4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters,vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855nm/min, and the selectivity ratio overSi02 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.     

Deep InP Gratings for Opto-Electronic Devices Etched by C12/CH4/Ar Inductively Coupled Plasma

Deep InP gratings are etched by C12/CH4/Ar inductively coupled plasma （ICP） at room temperature. A comparison is made between SiNz mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of C12/CH4/Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10：1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback A1GMnAs-InP laser.     

Effects of SiNx on two-dimensional electron gas and current collapse of A1GaN/GaN high electron mobility transistors

SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

SiN_x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN_x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN_x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

非故意掺杂GaN薄膜方块电阻与载气中N2比例关系研究

利用金属有机气相外延方法研究了非故意掺杂GaN薄膜的方块电阻与高温GaN体材料生长时载气中N₂比例的关系.研究发现,随着载气中N₂比例的增加,GaN薄膜方块电阻急剧增加.当载气中N₂比例为50%时,GaN薄膜方块电阻达1.1×10⁸Ω/□,且GaN表面平整,均方根粗糙度为0.233nm.二次离子质谱分析发现,载气中N₂比例不同的样品中碳、氧杂质含量无明显差别.随着载气中N₂比 关键词： 半绝缘GaN薄膜 载气 金属有机气相外延 位错