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A new design of staggered array semi-packed micro gas chromatographic column was presented based on the micro electromechanical system(MEMS)technology.It was a sensor for gas sample analysis.The internal velocity fields of ten types of semi-packed micro gas chromatographic column were studied.The effects of array spacing and dislocation spacing on the flow field distribution were investigated.The results show that on the basis of ensuring the formation of virtual wall,with the increase of array spacing,the maximum velocity difference between the flow channels in the vertical direction decreases gradually,but the velocity difference in the flow channels a and b increases.When the inlet velocity was set to be 0.18 m/s,the maximum velocity difference in the channel of the staggered semi-packed micro gas chromatography column 3(CSAC3)was 0.05610 m/s.The maximum velocity difference in the channel a was 0.09160 m/s.The maximum velocity difference in the channel b was 0.02401 m/s.CSAC3 had a more uniform velocity field distribution,which can effectively suppress the laminar flow effect during chromatographic separation,and had a smaller pressure distribution,which puts forward lower requirements for carrier gas system.The staggered array semi-packed micro gas chromatography column proposed in this paper can effectively improve the velocity field distribution and pressure distribution in the channel,and provide a theoretical basis for the design of the new micro gas chromatography column structure. 相似文献
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We provide an overview of quantum photonic network on chip. We begin from the discussion of the pros and cons of several material platforms for engineering quantum photonic chips. Then we introduce and analyze the basic building blocks and functional units of quantum photonic integrated circuits. In the main part of this review, we focus on the generation and manipulation of quantum states of light on chip and are particularly interested in some applications of advanced integrated circuits with different functionalities for quantum information processing, including quantum communication, quantum computing, and quantum simulation. We emphasize that developing fully integrated quantum photonic chip which contains sources of quantum light, integrate circuits, modulators, quantum storage, and detectors are promising approaches for future quantum photonic technologies. Recent achievements in the large scale photonic chips for linear optical computing are also included. Finally, we illustrate the challenges toward high performance quantum information processing devices and conclude with promising perspectives in this field. 相似文献
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高浓度掺Er3+铌酸锂晶体的光谱参数计算 总被引:4,自引:0,他引:4
用提拉法成功地生长了6mol%的高浓度掺铒铌酸锂晶体。测量了晶体的两个非偏振方向(X和Z)以及两个偏振方向(π和δ)的吸收光谱。高浓度掺铒铌酸锂晶体的吸收系数高,有利于提高泵浦效率。根据所测的吸收光谱用Judd-Ofelt理论拟合出了Er3 离子的强度参数Ωλ。所得的均方差结果显示偏振拟合的误差要小于非偏振拟合。利用偏振吸收数据计算了各能级跃迁的自发辐射跃迁几率(AJJ′)、辐射寿命(τ)、荧光分支比(β)和积分发射截面(σp)等参数,对计算结果进行了讨论并与其他文献的报道结果进行了比较。 相似文献
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We design and demonstrate a type of multiplexed hologram by nanoscatterers inside a dielectric-loaded plasmonic waveguide with guided-wave illuminations. The mode division multiplexed hologram(MDMH) is fulfilled by the scattering of guided waves to free space with respect to different modes. According to different mode numbers, these guided modes have different responses to the multiplexed hologram, and then give rise to different holographic images in reconstructions. In experiments, we show two kinds of MDMHs based on TM_0∕TE_0 and TE_0∕TE_1 modes as examples. Our approach could enrich the holography method that favors on-chip integration. 相似文献
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对用助熔剂提拉法生长的近化学计量比LiNbO3晶体进行了激光显微拉曼光谱测试分析,与同成分LiNbO3晶体相比较,A1(TO)与E(TO)模的谱线数目、频率基本不变,验证了LiNbO3晶体属置换式固溶体的结论.738cm-1处拉曼振动峰(A1(LO)模)的相对强度随晶体中Li2O含量的增加发生了明显的变化,在两种掺杂晶体中,此振动峰已经消失.根据Li空位模型,从占位和结构上进行了分析讨论.在152和872cm-1处拉曼振动峰半高宽随晶体中Li/Nb的增大而变窄,对二者关系进行了线性拟合,利用拟合公式可根据拉曼振动峰半高宽计算晶体中的Li/Nb值.
关键词:
化学计量比
拉曼光谱
线性拟合
半高宽 相似文献
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化学计量比LiNbO3晶体的畴结构及完整性研究 总被引:2,自引:2,他引:0
本文对用助熔剂提拉法生长的两种化学计量比LiNbO3晶体进行了测试分析,并与同成分LiNbO3晶体相比较.通过差热分析和X射线粉末衍射测试,得出随着晶体中Li2O含量的增加,其居里温度变高,晶格常数变小.用酸腐蚀晶体,通过直接观察和金相照片,分析其畴结构,得出SLN11是单畴生长,首次观察出SLN19晶体在Z切面上出现了三块面积较大的对称反畴区,将其称为区域性单畴.另外,还对晶体在(001)方向抛光面的不同位置测量了其回摆曲线,得到了其中SLN19晶体有着较完整的结晶面.期望通过改变生长参数,长出完全单畴且更加接近化学计量比的LiNbO3晶体. 相似文献
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