Cl/HN3/I2全气相化学激光体系的化学动力学模拟计算

 对Cl/HN₃/I₂产生NCl(a)/I激光的过程进行了化学动力学计算，主要考察了Cl,HN₃和I₂的初始粒子数密度及其配比对小信号增益系数的影响。结果发现,当温度为400K, 初始Cl粒子数密度为1×10¹⁵，1×10¹⁶和1×10¹⁷cm^-3时,小信号增益系数分别达到1.6×10^-4,1.1×10^-3和1.1×10^-2cm^-1，获得最佳小信号增益系数的HN₃和I₂的初始粒子数密度分别为初始Cl粒子数密度的1～2倍和2%～4%。同时，对Cl，HN₃和I₂配比对小信号增益系数和增益持续时间的影响进行了讨论。     

X射线脉冲星导航与相对论天体物理

介绍国内外正在研究中的X射线脉冲星自主导航的基本原理,及其与相对论天体物理的关系.     

Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories(MRAMs) with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor(CMOS) process respectively and different magnetic tunneling junctions(MTJs) are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad(Si) in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.     

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator(SOI) metaloxide-silicon(MOS) field-effect-transistors(FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.     

Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography

We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.     

COIL中稀释气体对单态氧产率影响的实验研究

 利用自发Raman散射光谱对射流式氧发生器的单态氧产率进行了测试，研究了稀释气体对于发生器产率的影响，并分析了造成影响的原因     

物料在多层流化床内非稳态干燥的实验研究

通过石英砂与绿豆在多层流化床内的非稳态干燥特性实验，得出与稳态干燥的重要区别即为没有稳定的值速干燥段。将Page方程修正后，可用于多层流化床非稳态干燥数据处理。推导出的非稳态干燥动力学方程证明在非稳态干燥时，不可能出现恒速干燥段，并表明变工况与快速高强度干燥是提高干燥速率的重要途径。     

Gd~(3+)掺杂浓度对NaErF_4∶Yb纳米晶上转换荧光性能的影响

采用温和的溶剂热法制备较强红光发射的NaErF4∶Yb,Gd上转换纳米晶,控制Gd~(3+)的掺杂浓度实现了晶相和尺寸可控以及上转换荧光的增强。X射线衍射谱(XRD)、透射电子显微镜图像(TEM)和上转换发射光谱结果分析表明,Gd~(3+)掺杂可以有效地促进NaErF_4纳米晶的晶相由立方相向六角相转变,并且减小纳米粒子的尺寸。随着Gd~(3+)掺杂浓度的上升,上转换荧光强度明显增大。当Gd~(3+)摩尔分数为25%时,样品的上转换荧光强度达到最大。同时,研究了在980 nm近红外激光激发下,Yb~(3+)与Er~(3+)间有效的能量传递以及上转换发光机制。     

Cl+HN3产生NCl(a1Δ)和NCl(b1∑)的实验研究

 对利用微波放电直接解离Cl₂生成Cl, Cl与HN₃反应生成NCl(a^1Δ )和NCl(b^1∑)的过程进行了实验研究。得到了较强的NCl(a^1Δ 和NCl(b^1∑)自发辐射光谱,考察了Cl₂流量和He/Cl₂配比对NCl(a^1Δ 和NCl(b^1∑)生成的影响。发现对于一定的He流量,Cl₂流量对NCl(a^1Δ 和NCl(b^1∑)生成的影响存在一最佳范围,而最佳He/Cl₂配比不是一定值,而是随He流量升高而变大,在实验所考察的He流量范围（5~40 L/min）内,最佳He/Cl ₂配比在30∶1~100∶1之间。     

Cl+HN3产生NCl(a1△)和NCl(b1∑)的实验研究

对利用微波放电直接解离Cl2生成Cl,Cl与HN3反应生成NCl(a1△)和NCl(b1∑)的过程进行了实验研究.得到了较强的NCl(a1△)和NCl(b1∑)自发辐射光谱,考察了Cl2流量和He/Cl2配比对NCl(a1△)和NCl(b1∑)生成的影响.发现对于一定的He流量,Cl 2流量对NCl(a1△)和NCl(b1∑)生成的影响存在一最佳范围,而最佳He/Cl 2配比不是一定值,而是随He流量升高而变大,在实验所考察的He流量范围(5～40 L/mm)内,最佳He/Cl 2配比在30:1～100:1之间.