Li_3VO_4-Li_4SiO_4-Li_4GeO_4赝三元系相图的研究

本文用差热分析法和高温、室温X射线衍射法对Li_3VO_4,Li_4SiO_4的相变过程,Li_3VO_4-Li_4SiO_4,Li_3O_4-Li-4GeO_4赝二元系相图以及Li_3VO_4-Li_4SiO_4-Li_4GeO_4赝三元系相图室温截面进行了研究。发现在Li_3VO_4-Li_4SiO_4,Li_3VO_4-Li_4GeO_4赝二元系中,由于Li_4SiO_4或Li_4GeO_4的加入而使Li_3VO_4的高温γ_(II)相稳定存在于室温,从而得到一种新的具有高电导率的锂离子导体。作者认为探寻使高温态稳定存在于室温的方法是探索新的离子导体研究中有效途径之一。     

从Riemann积分到Lebesgue积分——用完备化思想建立Lebesgue积分(连载)

用距离空间完备化思想,通过极限过程,借助于连续函数的Reimann 积分建立Lebes-gue 积分理论,包括积分收敛定理和空间L~P(a,b)的理论.编者不直接利用完备化定理的结论,也不要求读者事先了解完备化定理.因此读者在阅读本文时不会感到抽象.仅在最后以距离空间完备化的观点对全部工作作了简短的评注,了解完备化思想的读者会对本文有更深的理解.同时编者又认为,作为实变函数的一种可供选取的教材,这仍不是一种最好的方案,也不会完全取代目前通用的教材.但是编者愿意借这个机会,就实变泛函教材的改革(特别以工科大学生、研究生为对象的教材)与大家一起开展讨论.Lebesgue 积分是近代数学的重要基础,是联结初等微积分与近代分析的桥梁。本文从连续函数及Riemann 积分出发,通过将极限过程直接定义Lebesgue 积分,力图以较小的篇幅向读者介绍Lebesgue 积分理论。文中所贯穿的空间完备化的思想将指导读者进一步学习近代分析数学的理论.阅读本文仅要求读者了解集合论的基础知识。     

大尺寸LnBa2Cu3O7-δ单晶的生长及其超导电性

本文报道大尺寸LnBa₂Cu₃O_7-δ(Ln=Y,Eu,Gd,Dy,Ho,Er,Tm,Yb,Lu)单晶生长及其超导电性,并讨论了(001)自然晶面的X射线多级衍射、劳厄相、旋进相等单晶鉴定法。 关键词：     

分离电离室同步辐射束线位置监测器

本文介绍的分离电离室同步辐射光束线(在X射线能区)垂直位置监测器,可同时监测束线绝对垂直位置和相对总强度.束线无阻挡通过.常规X源实验结果表明原理可靠,方法简便,性能稳定,可投入实用.     

SRM 768——超导固定点温度的复现

在~3He-~4He稀释致冷机上复现了SRM768的全部五个超导固定点(即AuIn_2,AuAl_2,Ir,Be,W)的转变温度T_e和转变曲线,给出了转变宽度w和互感变化△M。提供了测量过程中的技术要点。对结果作了分析讨论。     

液氮温区Y-Ba-Cu-O超导薄膜的研究

我们采用了rf磁控反应溅射的方法,在单晶ZrO_2YSZ和多晶SrTiO_3等基片上成功地制备了Y-Ba-Cu-O超导薄膜。所获得的零电阻转变温度达81K。膜厚为1—2μm。 本文对膜的成分、基片、R-T曲线和热处理过程等作了叙述。     

光泵Ba/He系统582.8nm碰撞诱导荧光辐射及其弛豫振荡

观察到光泵Ba/He混合物产生的582.8nm碰撞诱导荧光新谱线及其弛豫振荡.进行理论分析和计算,结果与实验相符合.     

Properties of a dielectric plate using entangled two-photon states

We theoretically study the properties of a dielectric plate with a modified Hong-Ou-Mandel interferometer. The fourth-order correlation functions are calculated in two regimes, which are divided depending on the relative size between the thickness of the dielectric plate and the one-photon coherence length. When the thickness of the dielectric plate is less than the one-photon coherence length, a novel modulation behavior of the coincidence rate is observed, which has not been discussed before. If the thickness of the dielectric plate is larger than the one-photon coherence length, coalescence and anti-coalescence are observed. The obtained results highlight the effects of a linear optical element on fourth-order interference.     

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures.On the basis of our early research on the surface photovoltage of GaAs photocathodes,and comparative research before and after activation of reflection-mode GaAs photocathodes,we further the comparative research on transmission-mode GaAs photocathodes.An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer.By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure,we can obtain the equations for the surface photovoltage(SPV) curve before activation and the spectral response curve(SRC) after activation.Through experiments and fitting calculations for the designed material,the body-material parameters can be well fitted by the SPV before activation,and proven by the fitting calculation for SRC after activation.Through the comparative research before and after activation,the average surface escape probability(SEP) can also be well fitted.This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method,which only measures the body parameters by SRC after activation.It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes,and optimize the Cs-O activation technique in the future.