排序方式: 共有102条查询结果,搜索用时 15 毫秒
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利用水热法制备ZnO微米棒。醋酸镁[Mg(CH3COO)2.4H2O]、醋酸锌[Zn(CH3COO)2.2H2O]和六次甲基四胺(C6H12N4)以一定比例配置成反应溶液,把反应溶液加热到90℃,反应时间为24h,能够在硅衬底上生长高质量的ZnO微米棒。用扫描电镜(SEM)和X射线衍射仪对ZnO微米棒的晶体结构和表面形貌进行了分析,结果表明,样品为细长条棒状结构,呈现六方纤锌矿结构,长径比可达10∶1,并且在[002]方向择优生长。在样品中并未发现镁离子,它有可能扮演着催化剂的角色。对ZnO微米棒的光致发光性能进行测量,由PL光谱分析可知,样品在384nm处有一个紫外发光峰,半峰全宽为13nm,紫外发光峰强度比可见发光峰强度大的多,样品的质量较好。 相似文献
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810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures
The 810-nm InGaAlAs/AlGaAs double quantum well (QW) semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conver- sion efficiency at continuous-wave (CW) power output. The threshold current density and slope efficiency of the device are 180 A/cm^2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm^-1 and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns. 相似文献
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根据Radon变换的统计特性构造了不变量,提出一种新的基于多尺度Radon变换的图像形状检索方法.对检索图像作小波变换,根据小波模极大原理得到边缘图像,对边缘图像构造Radon变换中心矩,在中心矩的基础上根据Radon的统计原理构造出尺度不变矩.由于矩阵的奇异值具有旋转不变性,因此针对不变矩向量矩阵求奇异值,该奇异值特征向量具有平移、尺度和旋转不变性.将该Radon变换的不变量作为形状特征,并进行高斯归一化,按照欧氏距离计算不同图像间的形状相似度.试验结果表明,该方法对高斯噪音具有较强的鲁棒性,与其它方法相比具有较好的检索效果. 相似文献
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采用原子层沉积技术(atomic layer deposition)在InP衬底上生长ZnO薄膜,并在不同温度下(500和700 ℃)进行热退火处理,将P掺杂进入ZnO,得到p型ZnO薄膜。样品的光学特性通过光致发光光谱(photoluminescence, PL)来测定,得出热退火温度是影响P扩散掺杂的重要因素,低温PL光谱中,700 ℃热退火1 h样品的光谱展现出四个与受主相关的发射峰:3.351,3.311,3.246和3.177 eV,分别来自受主束缚激子的辐射复合(A°X)、自由电子到受主的发射(FA)、施主受主对的发射(DAP)以及施主受主对的第一纵向声子伴线(DAP-1LO),计算得到受主束缚能为122 meV,与理论计算结果一致。通过热扩散方式实现了ZnO薄膜的p型掺杂,解决了制约ZnO基光电器件发展的主要问题, 对ZnO基半导体材料及其光电器件的发展有重要意义。 相似文献
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Optical properties of 1.3-μm InAs/GaAs quantum dots grown by metal organic chemical vapor deposition
The optical properties of self-assembled InAs quantum dots (QDs) on GaAs substrate grown by metalorganic chemical vapor deposition (MOCVD) are reported. Photoluminescence (PL) measurements prove the good optical quality of InAs QDs, which axe achieved using lower growth temperature and higher InAs coverage. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum (FWHM) are 1305 nm and 30 meV, respectively, which are obtained as the QDs are finally capped with 5-nm In0.06Ga0.94As strain-reducing layer (SRL). The PL spectra exhibit two emission peaks at 1305 and 1198 nm, which correspond to the ground state (GS) and the excited state (ES) of the QDs, respectively. 相似文献
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