利用MOCVD在r面蓝宝石上生长的α面GaN中两步AlN缓冲层的优化

采用两步AlN缓冲层(一层低温AlN和一层高温AlN)在r面蓝宝石衬底上生长了非极性的α面GaN,并利用高分辨X射线衍射和光致荧光谱对所生长的材料进行了研究.两步AIN缓冲层在我们之前的工作中已被证明比单步高温AlN或低温GaN缓冲层更有利于减小材料各向异性和提高晶体质量,本文进一步优化了两步AlN缓冲层的结构,并得到了各向异性更小,晶体质量更好的α面GaN薄膜.分析表明,两步AlN缓冲层中的低温AlN层在减小各向异性中起着关键作用.低温AlN层能抑制了优势方向(c轴)的原子迁移,有利于劣势方向(m轴)的原子迁移,从而减小了Al原子在不同方向迁移能力的差异,并为其后的高温AlN缓冲层和GaN层提供"生长模板",以得到各向异性更小、晶体质量更好的α面GaN材料.     

含电子给体乙炔二茂铁化合物的光谱及电化学性质

合成了三种含电子给体乙炔基桥连二茂铁化合物Fc—C≡C—Ph—(p-OMe)(3a),Fc—C≡C—Ph—(p-NMe2)(3b)与Fc—C≡C—Ph—(p-NPh2)(3c),并对其结构、光化学及电化学性质进行了表征.吸收光谱表明,所有化合物在可见光区400-550nm都可归属为Fe(II)→Cp—C≡C—Ph—(p-R)(Cp为环戊二烯基)的金属到配体的电荷跃迁(MLCT)光谱,同时检测到3a与3c氧化态在近红外区(分别位于946与1044nm)可归属为Cp—C≡C—Ph—(p-R)→Fe(III)的配体到金属的电荷跃迁(LMCT).电化学测试结果表明,三种化合物都有稳定的Fc+/Fc可逆氧化还原电位,且3b与3c还出现Ph—NR2的氧化电位.3b对质子表现出光及电化学敏感性,随着质子的加入,其MLCT光谱红移,Fc+/Fc电位正移,而Ph—NR2+/Ph—NR2峰消失.     

具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性

研究了具有InGaN/GaN超晶格(SL)插入结构的绿光InGaN/GaN多量子阱(MQW)的发光特性。结构测试表明,SL插入结构并没有引起MQW中平均In组份的增加,而是改变了In组份的分布,形成了高In组份的量子点和低In组份量子阱。其电致发光(EL)谱和光致发光(PL)谱均出现了双发光峰。我们认为这两个 峰分别来自于量子点和量子阱,且存在着载流子从阱向点转移的输运机制。最后变温PL积分强度的Arrhenius 拟合表明,SL插入结构并没有在MQW中引入新的缺陷,使其发光效率下降。     

Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Here in this paper,we report a room-temperature operating infrared photodetector based on the interband transition of an In As Sb/Ga Sb quantum well.The interband transition energy of 5-nm thick In As_(0.91)Sb_(0.09) embedded in the Ga Sb barrier is calculated to be 0.53 e V(2.35μm),which makes the absorption range of In As Sb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum.The fabricated photodetector exhibits a narrow response range from 2.0μm to 2.3μm with a peak around 2.1μm at 300 K.The peak responsivity is 0.4 A/W under-500-m Vapplied bias voltage,corresponding to a peak quantum efficiency of 23.8%in the case without any anti-reflection coating.At 300 K,the photodetector exhibits a dark current density of 6.05×10~(-3)A/cm~2under-400-m V applied bias voltage and3.25×10~(-5)A/cm~2under zero,separately.The peak detectivity is 6.91×10~(10)cm·Hz~(1/2)/W under zero bias voltage at 300 K.     

Numerical and Experimental Study on the Device Geometry Dependence of Performance of Heterjunction Phototransistors

Heterojunction phototransistors(HPTs)with scaling emitters have a higher optical gain compared to HPTs with normal emitters.However,to quantitativel.y describe the relationship between the emitter-absorber area ratio(A_e/A_a)and the performance of HPTs,and to find the optimum value of A_e/A_a for the geometric structure design,we develop an analytical model for the optical gain of HPTs.Moreover,five devices with different A_e/A_a are fabricated to verify the numerical analysis result.As is expected,the measurement result is in good agreement with the analysis model,both of them confirmed that devices with a smaller A_e/A_a exhibit higher optical gain.The device with area ratio of 0.0625 has the highest optical gain,which is two orders of magnitude larger than that of the device with area ratio of 1 at 3 V.However,the dark current of the device with the area ratio of 0.0625 is forty times higher than that of the device with the area ratio of 1.By calculating the signal-to-noise ratios(SNRs) of the devices,the optimal value of Ae/Aa can be obtained to be 0.16.The device with the area ratio of0.16 has the maximum SNR.This result can be used for future design principles for high performance HPTs.     

基于适配体/金纳米粒子的“开-关”型荧光探针快速测定水胺硫磷

基于适配体和金纳米粒子(Gold nanoparticles, AuNPs)合成"开-关"型荧光探针,用于快速、灵敏、高选择性测定水胺硫磷。5’端连接荧光素(6-Carboxyfluorescein, FAM)的发卡型水胺硫磷适配体互补链(Complementary strand, cDNA)通过修饰于3’端的巯基连接到AuNPs表面,FAM(荧光信号分子)与AuNPs(荧光猝灭剂)间发生荧光共振能量转移效应(Fluorescence resonance energy transfer, FRET),导致荧光猝灭。加入水胺硫磷适配体(Isocarbophos-binding aptamer, ICP-Aptamer)与cDNA杂交,cDNA发卡构型被打开,使荧光信号恢复。当体系中存在水胺硫磷时,ICP-Aptamer与其特异性结合,导致与cDNA解离,cDNA发卡型结构重新恢复,使荧光信号猝灭。采用透射电镜、紫外-可见光谱、Zeta电位表征纳米粒子特性,优化了实验参数,包括pH值、ICP-Aptamer浓度、温育时间和温育温度。在优化的实验条件下,在0.02～10μmol/L线性范围内...     

马尔可夫链在贫困县农村劳动力流动趋势预测中的应用

贫困县农民脱贫致富的有效途径是进行农村劳动力的有序流动。要想科学地引导该区域农村劳动力的有序流动,必须对农村劳动力流动的趋势有一个整体的认识。本文利用马尔可夫链(Markovchain)建立了贫困县农村劳动力流动趋势模型,对贫困县农村劳动力转移达到稳定状态的年限及其极限概率作出定量预测,对政府和有关部门制定贫困县农村劳动力转移的决策具有一定的借鉴意义。     

基于颗粒流的新老混凝土加固构件轴压性能细观研究

考虑到混凝土是一种非均质材料,为研究新老混凝土界面黏结特性和破坏机理,利用PFC3D细观离散元软件对新老混凝土黏结试块双面剪切性能和增大截面法加固钢筋混凝土构件轴压力学性能进行数值研究。结果表明,对于双面剪切试验,新老混凝土剪切-位移数值曲线与试验曲线基本一致,模型接触断裂主要发生在新老混凝土界面处,裂缝数量随着模型达到峰值后急剧上升,在界面处形成贯通的断裂面;在轴压试验模拟中,轴压力、混凝土应变关系数值曲线与试验结果吻合较好,数值结果能较好地预测软化阶段,模型中接触断裂主要发生在柱中部及下部位置,与实际破坏模式相符。     

NORMAL-INCIDENCE QUANTUM WELL INFRARED PHOTODETECTOR WITHOUT GRATING COUPLER

The n-type GaAs/Al_xGa_1-xAs multiple quantum well infrared photodetectors have been demonstrated without any grating couplers. We have achieved a responsivity R_v of 1.7×10⁵V/W and a detectivity D_λ^* of 4.0×10¹⁰ cm (Hz)^1/2/W for a wavelength of 8.4 μm at a temperature T = 77 K in normal incidence.     

InAs量子点引入应力对调制掺杂结构中二维电子气输运特性的影响

系统研究了在调制掺杂AlGaAs/GaAs异质结中嵌入InAs量子点后对二维电子气输运特性的影响。使用分子束外延设备生长了量子点层与二维电子气沟道距离（T_ch）不同的3个样品,霍尔测试结果表明,二维电子气的电子迁移率和载流子浓度都随T_ch的减小而降低。基于几何相位分析算法对部分样品的高分辨透射电镜图像进行了处理,得到了其应变分布图。结果表明,应变主要分布在量子点的周围,并延伸到了量子点的上方。该不均匀的应力场可能是除库伦散射外影响电子迁移率降低的另一个重要因素。