用推广的平面波展开法检验平面内极化的电子子带跃迁

把平面波展开包络函数的方法推广到求解8带的哈密顿量，使它同时包括Γ^c₁和Γ^v₁₅．在这种方法里，可以考虑反演不对称性、能带的非抛物性、有效质量不连续性以及自旋轨道耦合等效应的影响．作为应用，计算了两个量子阱结构的子带和光跃迁概率．实验上在这两个结构中观察到了平面内极化的电子子带跃迁．计算表明这种跃迁的概率很小．实验上观察到的平面内极化的电子子带吸收可能有其他的机制 关键词：     

SiNx插入层的生长位置对GaN外延薄膜性质的影响

系统研究了纳米量级的多孔 SiNx插入层生长位置对高质量GaN外延薄膜性质的影响.高分辨X射线衍射测量结果表明:SiNx插入层生长在CaN粗糙层上能够得到最好的晶体质量.利用测量结果分别计算出了螺位错和刃位错的密度.此外,GaN薄膜的光学、电学性质分别用Raman散射能谱、低温光致发光能谱和霍尔测量的方法进行了表征.实...     

国产SiC衬底上利用AIN缓冲层生长高质量GaN外延薄膜

采用高温AlN作为缓冲层在国产SiC衬底上利用金属有机物化学气相外延技术生长GaN外延薄膜.通过优化AlN缓冲层的生长参数得到了高质量的GaN外延薄膜,其对称(0002)面和非对称(1012)面X射线衍射摇摆曲线的半峰宽分别达到130 arcsec和252 arcsec,这是目前报道的在国产SiC衬底上生长GaN最好的...     

对氨基苯酚在石墨烯-离子液体复合物修饰电极上的电化学行为研究

使用石墨烯(Graphene,GR)和离子液体1-丁基-3-甲基咪唑六氟磷酸盐([BMIM] PF6)作修饰剂,通过壳聚糖(CHIT)成膜,制备了石墨烯-离子液体复合物修饰电极([BMIM] PF6 - GR - CHIT/GCE).在0.1 mol/L磷酸盐缓冲液中,采用循环伏安和微分脉冲伏安法研究了对氨基苯酚在[...     

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

Gallium nitride (GaN) thin film of the nitrogen polarity (N-polar) was grown on C-plane sapphire and misoriented C-plane sapphire substrates respectively by metal-organic chemical vapor deposition (MOCVD). The misorientation angle is off-axis from C-plane toward M-plane of the substrates, and the angle is 2° and 4° respectively. The nitrogen polarity was confirmed by examining the images of the scanning electron microscope before and after the wet etching in potassium hydroxide (KOH) solution. The morphology was studied by the optical microscope and atomic force microscope. The crystalline quality was characterized by the x-ray diffraction. The lateral coherence length, the tilt angle, the vertical coherence length, and the vertical lattice-strain were acquired using the pseudo-Voigt function to fit the x-ray diffraction curves and then calculating with four empirical formulae. The lateral coherence length increases with the misorientation angle, because higher step density and shorter distance between adjacent steps can lead to larger lateral coherence length. The tilt angle increases with the misorientation angle, which means that the misoriented substrate can degrade the identity of crystal orientation of the N-polar GaN film. The vertical lattice-strain decreases with the misorientation angle. The vertical coherence length does not change a lot as the misorientation angle increases and this value of all samples is close to the nominal thickness of the N-polar GaN layer. This study helps to understand the influence of the misorientation angle of misoriented C-plane sapphire on the morphology, the crystalline quality, and the microstructure of N-polar GaN films.     

一种对质子敏感Eu(Ⅲ)配合物的合成及性质

合成了一种新型铕配合物Eu(PTBMA)3(PTBMA为N-丙基-4-[4′-(2,2′:6′,2″-三联吡啶)基]-苯甲胺),通过紫外及荧光光谱对其质子化过程进行详细的研究。结果表明:低浓度质子的加入由于阻碍了配合物体系内的PET(Photo-induced electron transfer)过程,有利于Eu(Ⅲ)离子的5D0→7FJ(     

盐酸多奈哌齐开环杂质的合成

以盐酸多奈哌齐为起始原料,与草酸二乙酯和双氧水经一锅煮法合成了多奈哌齐的开环杂质,纯度98.8%,总收率31.2%,其结构经¹H NMR和MS(ESI)确证。     

大学物理实验数据分析系统的设计与实现

利用面向对象的VB可视化软件,开发设计了大学物理实验数据分析系统,大学物理实验数据分析系统由实验项目模块、数据处理模块、有效数字与不确定度模块和绘图软件模块构成。结果表明,该系统具有操作简捷、界面友好、人机交互性强等特点;系统的使用解决了学生应用有效数字修约和计算不确定度的困难,有助于学生将主要精力用于实验测量与结果评价。     

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction

Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in the InGaN/GaN multiquantum wells embedded in a p-n junction. Under non-resonant absorption conditions, a photocurrent was generated and the photoluminescence intensity decayed by more than 70% when the p-n junction out-circuit was switched from open to short. However, when the excitation photon energy decreased to the resonant absorption edge, the photocurrent dropped drastically and the photoluminescence under open and short circuit conditions showed similar intensity. These results indicate that the escaping of the photo-generated carriers from the quantum wells is closely related to the excitation photon energy.     

GaSb/GaAs复合应力缓冲层上自组装InAs量子点的生长

研究了GaSb/GaAs复合应力缓冲层上自组装生长的InAs量子点.在2ML GaSb/1ML GaAs复合应力缓冲层上获得了高密度的、沿［100］方向择优分布量子点.随着复合应力缓冲层中GaAs层厚度的不同,量子点的密度可以在1.2×10¹⁰cm^-2和8×10¹⁰cm^-2进行调控.适当增加GaAs层的厚度至5ML,量子点的发光波长红移了约25nm,室温下PL光谱波长接近1300nm. 关键词： 自组装量子点 分子束外延 Ⅲ-Ⅴ族化合物半导体