排序方式: 共有45条查询结果,搜索用时 281 毫秒
41.
Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates
下载免费PDF全文
![点击此处可从《中国物理快报》网站下载免费的PDF全文](/ch/ext_images/free.gif)
A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0. 14 W·A^-1 and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication. 相似文献
42.
A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC
PD) based on a multimode diluted waveguide (MDW) structure is
fabricated, analysed and characterized. Optical and electrical
characteristics of the device are investigated. The excellent
characteristics are demonstrated such as a responsivity of 0.36~A/W,
a bandwidth of 11.5~GHz and a small-signal 1-dB compression current
greater than 18~mA at 10~GHz. The saturation current is
significantly improved compared with those of similar
evanescently-coupled pin photodiodes. The radio frequency (RF)
bandwidth can be further improved by eliminating RF losses induced
by the cables, the probe and the bias tee between the photodiode and
the spectrum analyzer. 相似文献
43.
Dual-wavelength distributed Bragg reflector semiconductor laser based on composite resonant cavity
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature. 相似文献
44.
Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum 总被引:4,自引:0,他引:4
A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲ trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively. 相似文献
45.
Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers. 相似文献