半导体微结构物理效应及其应用讲座第1讲布拉格衍射效应在半导体光电子器件中的应用与发展

文章对布拉格衍射效应在半导体光电子材料和光电子器件，特别是在光纤通信中的光电子器件的应用和发展进行了详细的介绍．文中以布拉格光栅衍射效应的光反馈和选模功能为主线，逐一介绍了X射线双晶布拉格衍射技术在半导体材料、特别是在量子阱和应变量子阱超薄层晶体生长和质量控制方面的作用，介绍了内建布拉格光栅对光通信用光信号源的发展所起的重要作用，波导光栅在复用和解复用过程中的作用，以及光纤布拉格光栅在全光纤通信系统中的应用及发展等．     

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.     

用于10Gb/s传输系统的电吸收调制器与分布反馈激光器集成光源

采用超低压(22×１０^２Pa)选择区域生长(selective area growth, SAG)金属有机化学气相沉积(metal-organic chemical vapor deposition, MOCVD)技术成功制备了应变型InGaAsP/InGaAsP电吸收调制器(electroabsorption modulator, EAM)与分布反馈激光器(distribute feedback laser, DFB)单片集成光源的新型光电器件.实验结果表明，采用该技术制备的集成器件表现出了良好的性能：激射阈值为19 mA，出光功率接近7 mW，边模抑制比(side-mode suppression ratio, SMSR)大于40 dB，将该集成器件出射光耦合进普通单模光纤后进行测量，获得了16 dB的消光比，器件3 dB响应带宽达到了10 GHz以上.将该集成器件完全封装后成功进行了10 Gb/s非归零码(non-return zero, NRZ)的传输实验：在误码率为10^-10的传输条件下于普通单模光纤中传输了53.3 km，色散代价小于1.5 dB，动态消光比大于8 dB，且眼图清晰张开. 关键词： 超低压 选择区域生长 集成光电子器件 10 Gb/s     

大功率1060nm双沟脊波导分布反馈激光器

研制了双沟型脊波导结构的1 060 nm分布反馈激光器.和普通脊波导激光器相比,该器件能提高在连续条件下的侧模稳定性.单模最大输出功率达到300 mW边模抑制比大于45 dB.采用该激光器进行泵浦周期性极化铌酸锂晶体倍频实验,得到的绿光功率为3 mW,该方案将成为低成本绿光光源实现方案.     

Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

A novel integratable and high speed InGaAsP multi-quantum well （MQW） complex-coupled distributed feedback （DFB） laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0. 14 W·A^-1 and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.     

High-performance evanescently-coupled uni-traveling-carrier photodiodes

A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36~A/W, a bandwidth of 11.5~GHz and a small-signal 1-dB compression current greater than 18~mA at 10~GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF) bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.     

Dual-wavelength distributed Bragg reflector semiconductor laser based on composite resonant cavity

We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.     

Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲ trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.     

InP基1×4多模干涉耦合器的设计与制作

在密集波分复用系统中,多波长DFB激光器阵列与多模干涉耦合器集成光源器件具有重要的应用前景.为了研制多波长集成光源中的宽带可用低损耗光耦合器,利用三维有限差分光束传播法仿真设计了一种具有强限制作用的InP/InGaAsP材料的多模干涉型耦合器.输入/输出端波导均采用楔形结构以降低多模干涉型耦合器的插入损耗,提高各个输出端口的出光平衡度.根据仿真结果,结合波导芯层为采用外延生长设备,采用反应离子刻蚀工艺制作了1×乘4多模干涉型耦合器.利用自动对准波导耦合测试系统对所制作器件的插入损耗和出光平衡度进行测量.测试结果表明,该器件在1 550 nm波长附近的40 nm带宽范围内获得了约2.6 dB的通带平坦度,在1 550 nm通信波长处,器件的插入损耗低于10 dB.