Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes

This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.     

基于三阶段SM-DEA-Malmquist指数的长江经济带碳排放效率研究

碳排放问题近年来备受各界学者所关注。为评价长江经济带区域内碳排放绩效,本文结合非期望产出的三阶段SBM-DEA模型和Malmquist指数对2011~2019年长江经济带11省市碳排放效率测算及动静态分析,该模型剔除了环境因素和随机变量的影响,使得测算结果更加符合实际情况。研究表明:长江经济带碳排放绩效呈整体上升态势,且存在东部>中部>西部差异化特征,内部管理对碳排放效率提升的正向作用明显,加大东中西部地区的人才引入及技术交流频度,有助于提升碳排放效率。     

Optical microwave generation using two parallel DFB lasers integrated with Y-branch waveguide coupler

A new device of two parallel distributed feedback (DFB) lasers integrated monolithically with Y-branch waveguide coupler was fabricated by means of quantum well intermixing. Optical microwave signal was generated in the Y-branch waveguide coupler through frequency beating of the two laser modes coming from two DFB laser in parallel, which had a small difference in frequency. Continuous rapid tuning of optical microwave signal from 13 to 42GHz were realized by adjusting independently the driving currents injected into the two DFB lasers.     

超低压选择区域生长法制备产生10GHz重复率超短光脉冲的级联电吸收调制器与分布反馈激光器单片集成光源

采用超低压(22×１０^２Pa)选择区域生长(selective area growth, SAG)金属有机化学气相沉积(metal-organic chemical vapor deposition, MOCVD)技术成功制备了InGaAsP/InGaAsP 级联电吸收调制器(electroabsorption modulator, EAM)与分布反馈激光器(distributed feedback laser, DFB)单片集成光源的新型光电器件.实验结果表明，采用该技术制备的器件 关键词： 超低压 选择区域生长 集成光电子器件 超短光脉冲     

Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates.These devices exhibit simultaneously 2.1 GHz and 16.2 dB RF-gain at 21 GHz with a 450 thin-film resistor and a bypass capacitor integrated on a chip.     

Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been monolithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method.Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.     

Application of sampled grating to control the lasing wavelength in complex-coupled DFB laser

This paper reports that the complex-coupled distributed feedback laser with the sampled grating has been designed and fabricated. The +1st order reflection of the sampled grating is utilized for laser single mode operation, which is 1.5387~μ m in the experiment. The typical threshold current of the device is 30~mA, and the optical output power is about 10~mW at the injection current of 100~mA.     

一种利用光电流和光透过曲线测量电吸收调制器插入损耗因素的方法

提出一种新颖的方法用于测量电吸收调制器（electroabsorption modulator,EAM）各种因素造成的插入损耗.此方法仅需要测量波长相关的光电流（I_ph-λ）和光透过功率（P-λ）的数据,通过最小二乘法拟合出结果.理论分析表明此方法较精确,实验表明测试结果与理论拟合结果自洽得很好. 关键词： 电吸收调制器 插入损耗 吸收曲线 光生电流     

Transmission of 20 Gb/s PAM-4 signal over 20 km optical fiber using a directly modulated tunable DBR laser

We report 20 Gb/s transmission of four-level pulse amplitude modulation(PAM) signal using a directly modulated tunable distributed Bragg reflector(DBR) laser. Transmission distance over 20 km was achieved without using optical amplifiers and optical dispersion compensation modules. A wavelength tuning range of 11.5 nm and a 3 dB bandwidth greater than 10 GHz over the entire wavelength tuning range were obtained.     

Narrow-beam divergence 1.55μm laser diodes with integrated self-aligned spotsize converter

This paper describes the high performance of narrow-beam divergence spot size converter(SSC)integratedseparately confined heterostructure(SCH)LD.The upper optical confinement layer (OCL) and thebutt-coupled tapered thickness waveguide were regrown simultaneously,which not only offered theseparated optimization of the active region and the integrated spotsize converter,but also reduced thedifficulty of the butt-joint selective regrowth. The threshold current was as low as 5.4 mA,the outputpower at 55 mA was 10.1 mW, the vertical and horizontal far field divergence angles were as low as 9°and 15°,and the 1-dB misalignment tolerances were 3.6 and 3.4 μm, respectively.