GaN的声表面波特性研究

采用金属有机物化学气相外延方法在(0001)面蓝宝石上生长了高质量、高阻的未掺杂(0001)面GaN薄膜。为精确测量GaN薄膜材料的声表面波特性，在GaN薄膜表面上沉积了金属叉指换能器，叉指换能器采用等叉指结构，叉指的数目为40对，叉指间距为15μm。采用脉冲法测量了声表面波在自由表面和金属表面上的速度，并通过计算得到了机电耦合系数(κ^2)。所测量的声表面波速度（ν)为5667m／s，机电耦合系数(κ^2)为1．9％。     

Effect of Small-Angle Scattering on the Integer Quantum Hall Plateau

A GaAs/AlGaAs two-dimensional electron gas （2DEG） structure with the high mobility of μ2K= 1.78 × 10^6 cm^2/Vs has been studied by low-temperature Hall and Shubnikov de Hags （SdH） measurements. Quantum lifetimes related to all-angle scattering events reduced from 0.64 ps to 0.52 ps after i11uminating by Dingle plots, and transport lifetimes related to large-angle scattering events increasing from 42.3ps to 67.8ps. These results show that small-angle scattering events become stronger. It is clear that small-angle scattering events can cause the variation of the widths of the quantum Hall plateaus.     

Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

The infrared reflectance spectra of both 4H–SiC substrates and epilayers are measured in a wave number range from 400 cm 1 to 4000 cm 1 using a Fourier-transform spectrometer. The thicknesses of the 4H–SiC epilayers and the electrical properties, including the free-carrier concentrations and the mobilities of both the 4H–SiC substrates and the epilayers, are characterized through full line-shape fitting analyses. The correlations of the theoretical spectral profiles with the 4H–SiC electrical properties in the 30 cm 1 –4000 cm 1 and 400 cm 1 –4000 cm 1 spectral regions are established by introducing a parameter defined as error quadratic sum. It is indicated that their correlations become stronger at a higher carrier concentration and in a wider spectral region (30 cm 1 –4000 cm 1 ). These results suggest that the infrared reflectance technique can be used to accurately determine the thicknesses of the epilayers and the carrier concentrations, and the mobilities of both lightly and heavily doped 4H–SiC wafers.     

Confined and Interface Phonons in Chirped GaAs-A1GaAs Superlattices

The confined longitudinal optical, transverse optical and interface phonon modes in chirped GaAs-AIGaAs superlattices grown on the （O01）-oriented GaAs substrate are studied by the micro-Raman spectroscopy. The phonon modes are probed at the （001） and （110） faces. The temperature dependence of the longitudinal optical, transverse optical and interface phonon modes are achieved. The temperature dependence of the longitudinal optical phonon frequencies demonstrates that a tensile strain exists in the GaAs layers of the chirped superlattices, which is significant for analyzing the device failure of a terahertz quantum cascade laser.     

Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer

The effects of V/Ill growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/III ratio. With decreasing V/III ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/III ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.     

量子点红外探测器的特性与研究进展

半导体材料红外探测器的研究一直吸引人们非常广泛的兴趣．以量子点作为有源区的红外探测器从理论上比传统量子阱红外探测器具有更大的优势．文章讨论了量子点红外探测器几个重要的优点，包括垂直入射光响应、高光电导增益、更低的暗电流、更高的响应率和探测率，等等．此外，报道了量子点红外探测器研究中一些最新的实验结果．在此基础上，分析了现存问题，并提出了进一步提高器件性能的几种可能途径．     

Broad gain,continuous-wave operation of InP-based quantum cascade laser at λ~11.8 μm

We demonstrate a broad gain, continuous-wave (CW) operation InP-based quantum cascade laser (QCL) emitting at 11.8 μm with a modified dual-upper-state (DAU) and diagonal transition active region design. A 3 mm cavity length, 16.5 μm average ridge wide QCL with high-reflection (HR) coatings demonstrates a maximum peak power of 1.07 W at 283 K and CW output power of 60 mW at 293 K. The device also shows a broad and dual-frequency lasing spectrum in pulsed mode and a maximum average power of 258.6 mW at 283 K. Moreover, the full width at half maximum (FWHM) of the electroluminescent spectrum measured at subthreshold current is 2.37 μm, which indicates a broad gain spectrum of the materials. The tuning range of 1.38 μm is obtained by a grating-coupled external cavity (EC) Littrow configuration, which is beneficial for gas detection.     

Beam steering characteristics in high-power quantum-cascade lasers emitting at∼4.6µm

A beam steering effect of high-power quantum cascade(QC) lasers emitting at 4.6 μm was investigated. The continuous wave(CW) output power of an uncoated, 6-mm-long, 7.5-μm-wide buried-heterostructure QC laser at 25℃ was as high as 854.2 m W. The maximum beam steering angle was offset by ±14.2° from the facet normal(0°) in pulsed mode. The phenomenon was judged explicitly by combining the diffraction limit theory and Fourier transform of the spectra. It was also verified by finite element method software simulation and the calculation of two-dimensional(2 D)effective-index model. The observed steering is consistent with a theory for coherence between the two lowest order lateral modes. Therefore, we have established an intrinsic linkage between the spectral instabilities and the beam steering by using the Fourier transform of the spectra, and further presented an extremely valid method to judge the beam steering. The content of this method includes both three equidistant peak positions in the Fourier transform of the spectra and the beam quality located between once the diffraction limit(DL) and twice the DL.     

Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor

We simulate the current-voltage （I-V） characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） with different gate lengths using the quasi-two-dimensional （quasi-2D） model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas （213EG） with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases.     

Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition

The effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence(PL) with the excitation wavelength as short as ～ 177 nm. Annealing experiments were carried out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200℃ to 1600℃. It is found that surface roughness reduced and compressive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties,a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL–ONcomplex in the AlN material.