High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 MW.cm^-2.     

Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with different wetting layer (WL) thickness, using the finite element method (FEM). The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.     

电子束诱导单壁碳纳米管不稳定的新观察

利用透射电镜在室温下对不同形态的单壁碳纳米管进行了原位电子束辐照研究.研究发现:在相同的辐照条件下随着辐照时间(或辐照剂量)的增加,两端固定的单壁碳纳米管径向收缩,且收缩速率越来越快;相同直径的轴向弯曲的单壁碳纳米管比平直的单壁碳纳米管更加不稳定;一端固定另端自由的单壁碳纳米管轴向收缩,但其直径基本不变.利用单壁碳纳米管纳米曲率效应和能量束诱导非热激活效应,对上述单壁碳纳米管不稳定性现象进行了新的、合理的解释.