N型局部有源忆阻器的神经形态行为

局部有源忆阻器(locally-active memristor,LAM)凭借其高集成度、低功耗和局部有源特性等优点,在神经形态计算领域显示出巨大的潜力.本文提出了一种简单的N型LAM数学模型,通过揭示其非线性动力特性,设计了N型LAM神经元电路.采用Hopf分岔、数值分析等方法定量研究了该电路的动力学行为,成功模拟了多种神经形态行为,包括全或无行为、尖峰、簇发、周期振荡等.并利用该神经元电路结构模拟了生物触觉神经元的频率特性.仿真结果表明:当输入信号幅值低于阈值时,神经元电路输出信号的振荡频率与输入信号强度呈正相关(即兴奋状态),并在阈值处达到最大值.随后,继续增大激励强度,振荡频率则逐渐降低(即保护性抑制状态).最后,设计了N型LAM硬件仿真器,并完成了人工神经元电路的硬件实现,实验结果与仿真结果、理论分析相一致,验证了该N型LAM具备的神经形态行为.     

A new Rosslor hyperchaotic system and its realization with systematic circuit parameter design

Based on two modified Rosslor hyperchaotic systems, which are derived from the chaotic Rosslor system by introducing a state feedback controller, this paper proposes a new switched Rosslor hyperchaotic system. The switched system contains two different hyperchaotic systems and can change its behaviour continuously from one to another via a switching function. On the other hand, it presents a systematic method for designing the circuit of realizing the proposed hyperchaotic system. In this design, circuit state equations are written in normalized dimensionless form by rescaling the time variable. Furthermore, an analogous circuit is designed by using the proposed method and built for verifying the new hyperchaos and the design method. Experimental results show a good agreement between numerical simulations and experimental results.