排序方式: 共有33条查询结果,搜索用时 125 毫秒
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随着集成电路规模的不断扩大和器件特征尺寸的不断缩减,保持和改善集成电路的制造成品率成为优化电路设计和制造工艺研究的热点.为了减少由冗余物缺陷和丢失物缺陷所引起的成品率损失,选择优先优化的线网成为版图优化过程中的一个重要课题.基于关键面积减小的版图优化是提高集成电路成品率的一种有效途径.本文提出了一种新的短路、开路灵敏度模型,该模型以线网为单位,反映了单位线网上该线网与周围线网间的短路关键面积和自身开路关键面积的大小.由于本文的灵敏度模型是关于单一线网的,同时又包含候选线网周围线网的信息,因此,在优化时可以同时减少候选线网与周围线网之间的短路关键面积以及线网本身的开路关键面积,提高了版图优化的效率.实验结果表明,该灵敏度模型可作为版图优化中线网位置选择的依据. 相似文献
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以多巴胺作为模板分子,碳量子点作为荧光响应信号,通过自由基聚合制备对多巴胺具有特异性识别位点的荧光分子印迹聚合物。所制得的印迹聚合物对多巴胺最大吸附量为非印迹聚合物吸附量的2. 61倍。对检测过程中体系pH,振荡时间及水浴孵化时间对分子印迹荧光传感器荧光响应的影响进行探究。所建立的荧光传感器对多巴胺的选择性明显高于对其结构类似物、糖类、氨基酸及常见的离子,方法的线性范围在0. 02~0. 3 mg/L之间,相对标准偏差为0. 090%~1. 8%,检出限为0. 01 mg/L,实际样品的回收率为76. 7%~118. 4%,表明制备的多巴胺分子印迹荧光传感器可以用于复杂样品中多巴胺的定量分析。 相似文献
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负膨胀材料Zn(CN)_2和Cd(CN)_2的晶格振动分析 总被引:2,自引:2,他引:0
运用群论理论对负膨胀系数材料Zn(CN)2和Cd(CN)2的晶格振动进行了对称性分类,利用第一性原理密度泛函理论计算了它们布里渊区中心点的声子频率和Grüneisen参数,根据计算得到的各个模式所对应的本征矢对各个振动模式进行了指认,根据各模式Grüneisen参数讨论了负膨胀机理。在11个光学振动模式中,一个属于Zn/Cd原子的晶格振动模,位于223 cm-1/154 cm-1;5个属于C≡N刚性单元平移振动模;3个属于C≡N刚性单元天平动;2个属于C≡N刚性单元内振动。有7个振动模为拉曼活性,4个振动模为红外活性,两个振动模红外和拉曼均为非活性。C≡N刚性单元的3个低频平移振动模和全部天平动模的Grüneisen参数为负,对负热膨胀的产生有贡献,振动频率为47 cm-1的平移振动模具有最大的负Grüneisen参数,对负膨胀贡献最大。 相似文献
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532nm连续激光晶化非晶硅薄膜的原位拉曼光谱研究 总被引:1,自引:0,他引:1
用磁控溅射制备了非晶硅薄膜,用波长为532 nm的连续激光退火和显微Raman光谱原位测试技术和场发射扫描电子显微镜研究了非晶硅薄膜在不同激光功率密度和不同扫描速度下的晶化状态。结果表明,激光照射时间10 s,激光功率密度大于2.929×105W/cm2时,能实现非晶硅薄膜晶化。在激光功率密度为5.093×105W/cm2,扫描速度为10 mm/s时非晶硅开始向多晶硅转化。在5.093×105W/cm2的功率密度下,以1.0 mm/s的扫描速度退火非晶硅薄膜,得到的晶粒直径为740 nm。 相似文献
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In the existing models of estimating the yield and critical area, the
defect outline is usually assumed to be circular, but the observed
real defect outlines are irregular in shape. In this paper,
estimation of the yield and critical area is made using the Monte
Carlo technique and the relationship between the errors of yield
estimated by circular defect and the rectangle degree of the defect
is analysed. The rectangular model of a real defect is presented, and
the yield model is provided correspondingly. The models take into
account an outline similar to that of an original defect, the
characteristics of two-dimensional distribution of defects, the
feature of a layout routing, and the character of yield estimation.
In order to make the models practicable, the critical area
computations related to rectangular defect and regular (vertical or
horizontal) routing are discussed. The critical areas associated with
rectangular defect and non-regular routing are developed also, based
on the mathematical morphology. The experimental results show that
the new yield model may predict the yield caused by real defects more
accurately than the circular model. It is significant that the yield
is accurately estimated using the proposed model for IC metals. 相似文献
27.
Using density functional theory, the electronic structures, lattice constants, formation energies, and optical properties of Al_xGa_(1-x)N are determined with Al component content x in a range from 0 to 1. As x increases, the lattice constants decrease in e-exponential form, and the band gap increases with a band bending parameter b=0.3954. The N–Al interaction force in the(0001) direction is greater than the N–Ga interaction force, while the N–Al interaction force is less than the N–Ga interaction force in the(10ī0) direction. The formation energies under different Al component content are negative and increase with Al component content increasing. The static dielectric function decreases, the absorption edge has a blue shift, and the energy loss spectrum moves to high energy with the Al component content increasing. 相似文献
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