二维材料解理技术新进展及展望

自从2004年首次制备出石墨烯以来,机械解理技术被广泛用于制备过渡金属二硫族化合物、黑磷等各种二维材料.在多种二维材料制备技术中,机械解理技术具有制备方法简单、普适性好等优点,最重要的是解理得到的晶体质量高,是研究很多新奇物性的理想选择.本文介绍了机械解理技术的产生背景,总结了常规机械解理技术在二维材料研究过程中的瓶颈.为了解决常规机械解理技术制备效率低、样品尺寸小的问题,一些新型机械解理技术近年来不断发展起来,如氧气等离子体辅助法和金膜辅助法等.作为自上而下的二维材料制备方法,新的解理技术在未来二维材料基础研究和应用中仍然充满生机.未来解理技术将朝更大尺寸,更高质量方向发展.     

低维原子/分子晶体材料的可控生长、物性调控和原理性应用

本文介绍了高鸿钧课题组在物理所20年来的部分代表性工作.研究的主要方向为低维纳米功能材料的分子束外延可控制备、生长机制、物性调控及其在未来信息技术中的原理性应用.从材料的可控制备入手,结合第一性原理的理论计算,阐明材料生长机制和结构与物性的关系,进而实现物性调控和原理性应用.主要内容有:1)纳米尺度"海马"分形结构的形成及其生长机制;2)STM分辨率的提高及最高分辨Si(111)-7×7原子图像的获得;3)固体表面上功能分子的吸附、组装及其机制;4)稳定、重复、可逆的纳米尺度电导转变与超高密度信息存储;5)固体表面上单分子自旋态的量子调控及其原理性应用;6)原子尺度上朗德g因子的空间分辨及其空间分布不均匀性的发现;7)晶圆尺寸、高质量、单晶石墨烯的制备及原位硅插层绝缘化;8)几种新型二维原子晶体材料的可控构筑及其物性调控;9)"自然图案化"的新型二维原子晶体材料及其功能化.这些工作为低维量子结构的构造、物性调控及其原理性应用奠定了基础.     

功能纳米结构的组装和物性调控

功能纳米结构的组装与物性调控是纳米电子器件前沿基础研究领域的重要问题.本文对我们实验室在纳米自组装结构和物性调控方面的主要研究进展进行介绍.对扫描隧道显微镜(STM)的成像机制和针尖功能化问题进行了研究和探讨.选用不同的策略和方法来实现功能分子在金属单晶基底上的可控自组装,形成各种自组装有序结构,通过磁性分子吸附构型的改变来实现对金属表面上单分子自旋态的量子调控.     

Orbit-Transfer Torque Switching

<正>In the post-Moore era, memory devices with smaller sizes, lower energy consumption, and higher reliability are desired. As a classic type of non-volatile memory, magnetic random-access memory(MRAM)is outstanding, since it keeps data storage by magnetic states(electron spin) instead of electron charges.     

Recent advances of defect-induced spin and valley polarized states in graphene

Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling, which can support a series of broken symmetry states. Atomic-scale defects in graphene are expected to lift these degenerate degrees of freedom at the nanoscale, and hence, lead to rich quantum states, highlighting promising directions for spintronics and valleytronics. In this article, we mainly review the recent scanning tunneling microscopy (STM) advances on the spin and/or valley polarized states induced by an individual atomic-scale defect in graphene, including a single-carbon vacancy, a nitrogen-atom dopant, and a hydrogen-atom chemisorption. Lastly, we give a perspective in this field.     

阳极氧化铝模板表面自组织条纹的形成

对未经化学抛光处理的Al进行阳极氧化得到阳极氧化铝模板，发现Al表面形成了条纹与多孔阵列共存的自组织结构，用原子力显微镜对这种结构进行了研究.借助Brusselator模型对条纹的形成机理进行了讨论，认为条纹图案是Al表面氧化层/电解液界面的Al₂O₃在整个反应过程中的生成和溶解两个过程相互竞争导致的，只有在特定的反应条件才会出现高度有序的结构. 关键词： 氧化铝模板（AAO） 原子力显微镜（AFM） 自组织条纹 Brusselator模型     

High quality sub-monolayer,monolayer, and bilayer graphene on Ru（0001）

High quality sub-monolayer, monolayer, and bilayer graphene were grown on Ru(0001). For the sub-monolayer graphene, the size of graphene islands with zigzag edges can be controlled by the dose of ethylene exposure. By increasing the dose of ethylene to 100 Langmuir at a high substrate temperature(800℃), high quality single-crystalline monolayer graphene was synthesized on Ru(0001). High quality bilayer graphene was formed by further increasing the dose of ethylene while reducing the cooling rate to 5℃/min. Raman spectroscopy revealed the vibrational states of graphene, G and 2D peaks appeared only in the bilayer graphene, which demonstrates that it behaves as the intrinsic graphene. Our present work affords methods to produce high quality sub-monolayer, monolayer, and bilayer graphene, both for basic research and applications.     

The influence of annealing temperature on the morphology of graphene islands

We report on temperature-programmed growth of graphene islands on Ru(0001) at annealing temperatures of 700°C,800°C,and 900°C.The sizes of the islands each show a nonlinear increase with the annealing temperature.In 700°C and 800°C annealings,the islands have nearly the same sizes and their ascending edges are embedded in the upper steps of the ruthenium substrate,which is in accordance with the etching growth mode.In 900°C annealing,the islands are much larger and of lower quality,which represents the early stage of Smoluchowski ripening.A longer time annealing at 900°C brings the islands to final equilibrium with an ordered moir’e pattern.Our work provides new details about graphene early growth stages that could facilitate the better control of such a growth to obtain graphene with ideal size and high quality.     

Effects of graphene defects on Co cluster nucleation and intercalation

Four kinds of defects are observed in graphene grown on Ru(0001) surfaces. After cobalt deposition at room temperature, the cobalt nanoclusters are preferentially located at the defect position. By annealing at 530℃, cobalt atoms intercalate at the interface of Graphene/Ru(0001) through the defects. Further deposition and annealing increase the sizes of intercalated Co islands. This provides a method of controlling the arrangement of cobalt nanoclusters and also the density and the sizes of intercalated cobalt islands, which would find potential applications in catalysis industries, magnetism storage, and magnetism control in future information technology.     

扫描隧道显微镜分辨能力的研究:对Si(111)-(7×7)表面的观察

用超高真空扫描隧道显微镜首次同时清晰地分辨出Si(111) (7×7)表面每个元胞中的 12个顶戴原子和 6个静止原子,这 6个静止原子的亮度与无层错半元胞内中心顶戴原子的亮度基本相同. 第一性原理计算图像和STM实验结果完全符合,针尖的尺度小于 7 时,可以完全同时分辨出Si(111) (7×7)表面的静止原子.