Growth and Magnetic Properties of Zincblende CrSb Epilayers on Relaxed and Strained （In, Ga）As Buffers

Zincblende CrSb （zb-CrSb） layers with room-temperature ferromagnetism have been grown on relaxed and strained （In,Ga）As buffer layers epitaxially prepared on （001） GaAs substrates by molecular-beam epitaxy. The structural characterizations of CrSb layers fabricated under the two cases are studied by using synchrotron grazing incidence x-ray diffraction （GID）. The results of GID experiments indicate that no sign of second phase exists in all the zb-CrSb layers. Superconducting quantum interference device measurements demonstrate that the thickness of zb-CrSb layers grown on both relaxed and strained （In,Ga）As buffer layers can be increased to ～12 monolayers （～3.6nm）, compared to ,～3 monolayers （～1 nm） on GaAs directly.     

Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In_(0.24)Ga_(0.76)As_(0.21)Sb_(0.79)bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10~(-5)A/cm~2at 500 mV,thereby providing a detectivity of 1.55×10~(11)cm·Hz~(1/2)/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10~(-3)A/cm~2at-300 mV,thereby resulting in a detectivity of 2.71×10~(10)cm·Hz~(1/2)/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.     

Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers

A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer,so as to reduce the system defects.At the same time,the influence of different interface structures of Al In Sb on the surface morphology of buffer layer is explored.The propagation mechanism of defects with the growth of buffer layer is compared and analyzed.The relationship between the quality of In Sb thin films and the structure of buffer layer is summarized.Finally,the growth of high quality In Sb thin films is realized.     

Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm

We report on the resonance fluorescence(RF) from single In As quantum dots(QDs) emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He–Ne laser is necessary to be used as a gate laser for obtaining RF. Rabi oscillation with more than one period is observed through the picosecond(ps) pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.     

Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing

We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering processes may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.     

Evolution of surface morphology and photoluminescence characteristics of 1.3-μm In_(0.5)Ga_(0.5)As/GaAs quantum dots grown by molecular beam epitaxy

Evolution of surface morphology and optical characteristics of 1.3-μm In0.5Ga0.5As/GaAs quantum dots （QDs） grown by molecular beam epitaxy （MBE） are investigated by atomic force microscopy （AFM） and photoluminescence （PL）. After deposition of 16 monolayers （ML） of In0.5Ga0.5As, QDs are formed and elongated along the [120] direction when using sub-ML depositions, while large size InGaAs QDs with better uniformity are formed when using ML or super-ML depositions. It is also found that the larger size QDs show enhanced PL efficiency without optical nonlinearity, which is in contrast to the elongated QDs.     

An effective reflectance method for designing broadband antireflection films coupled with solar cells

The solar spectrum covers a broad wavelength range,which requires that antireflection coating(ARC) is effective over a relatively wide wavelength range for more incident light coming into the cell.In this paper,we present two methods to measure the composite reflection of SiO2/ZnS double-layer ARC in the wavelength ranges of 300-870 nm(dualjunction) and 300-1850 nm(triple-junction),under the solar spectrum AM0.In order to give sufficient consideration to the ARC coupled with the window layer and the dispersion effect of the refractive index of each layer,we use multidimensional matrix data for reliable simulation.A comparison between the results obtained from the weighted-average reflectance(WAR) method commonly used and that from the effective-average reflectance(EAR) method introduced here shows that the optimized ARC through minimizing the effective-average reflectance is convenient and available.     

Electrically Driven InAs Quantum-Dot Single-Photon Sources

Electrically driven single photon source based on single InAs quantum dot （QDs） is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AlCaAs/CaAs distributed Bragg reflector （DBR） and a surface CaAs-air interface. The device is characterized by I-V curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. Hanbury Brown and Twiss （HBT） correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80 K     

Hole Spin Relaxation in an Ultrathin InAs Monolayer

We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer （1.5 ML） and compare with that of electrons, using polarization-dependent time-resolved photoluminescence （TRPL） experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes （τ1h = 196± 17 ps） that is in the magnitude similar to electrons （t1e= 354 ± 32 ps） in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.     

1.55μm波长发光的自组织InAs量子点生长

通过引入较长停顿时间,采用分子束外延循环生长方法在350℃低温获得了一种横向聚合的InAs自组织量子点,在荧光光谱中观察到1.55μm波长的发光峰. 通过AFM和PL谱的联合研究,表明此低温循环生长方法有利于在长波长发光的量子点的形成.