半导体InAs量子点单光子发射器件

文章概述了量子点单光子源的研究现状,综述了微腔量子点耦合单光子发射器件制备中关键的低密度InAs量子点外延技术,单量子点单光子发射二阶关联函数HBT检测方法,分布布拉格反馈微腔结构的制备以及实现液氮温度下电驱动微腔量子点单光子发射器件等研究结果.     

对一系列具有共轭发色团的有机硼喹啉配合物的基态和激发态性质的理论研究

文献合成并研究了一系列发光材料(Ph2Bq-x2) [x2=5,7-dibromo(1); 5,7-diphenyl(2); 5,7-bis(biphenyl-4-yl); 5,7-bis(9,9-dihexylfluoren); q=8-quinolinelate]。结果显示，在强吸收峰处，随着配体共轭链的增长，光谱发生明显红移。这里，用di(p-nitrostyryl) (3) 和 distyryl (4) 来分别取代bis(biphenyl-4-yl) 和 bis(9,9-dihexylfluorenyl)。用密度泛函理论和含时密度泛函理论来研究并比较了四个分子的电子结构和光谱性质。计算结果表明简单的取代基仍然可以产生从1到4的红移。此外，3和4 在吸收峰的位置具有比1和2大的振子强度，这将增加电子从基态到激发态的跃迁几率，较高的向激发态的跃迁几率意味这强的发射强度。     

Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy

High （42.5%） indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy, The growth parameters of plasma power and N2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31 μm.     

螺旋共轭化合物及其相对应的多烯及联苯连接合物的结构,？…

用ＡＭ１和ＩＮＤＯ／ＣＩ方法研究了螺旋共轭化合物Ｉ的结构和电子光谱，并在此基础上，用完全态求和公式（ＳＯＳ，自编程序）计算了二阶非线性光学系数βμ，把结果与其对应的多烯及联苯连接的化合物Ⅱ和Ⅲ用同一方法计算得到的结果加以比较，发现螺旋共轭化合物Ⅰ的二阶非线性光学系数βμ虽然小于ⅡⅢ，但其透明性均比化合物Ⅱ和Ⅲ好。     

Simulation of Confined and Interface Phonons Scattering in Terahertz Quantum Cascade Laser

We have performed the calculation of resonant-phonon transition in a terahertz quantum cascade laser. The electron wavefunctions and energy levels are obtained by solving the Schroedinger and Poisson equations selfconsistently. The scattering rates of the confined, interface, and bulk phonons are calculated by using the Fermi golden rule. It has been shown that the confined phonon scattering is comparable to the interface phonon scattering and should be taken into consideration in the calculation.     

求解二相LWR交通流模型的低耗散中心迎风格式

将求解双曲型守恒律方程的低耗散中心迎风格式和5阶WENO-ZQ格式相结合,推广应用于求解二相LWR交通流模型方程.并在时间方向上推进采用具有强稳定性的4阶Rung-Kutta方法.最后结合Riemann问题及现实生活所遇到的交通流现象进行设计和分析.通过数值算例证明该格式具较强的稳定性和较高的精度,得到了令人满意的结果.     

CnSi(n=49,50)的理论研究

用量子化学从头算方法研究了C     

Numerical simulation of filler metal droplets spreading in laser brazing

A finite element model was constructed using a commercial software Fidap to analyze the Cu-base filler metal droplet spreading process in laser brazing,in which the temperature distribution,droplet geometry, and fluid flow velocity were calculated.Marangoni and buoyancy convection and gravity force were considered,and the effects of laser power and spot size on the spreading process were evaluated.Special attention was focused on the free surface of the droplet,which determines the profile of the brazing spot. The simulated results indicate that surface tension is the dominant flow driving force and laser spot size determines the droplet spreading domain.     

聚氧乙烯功能基复合修饰聚氨酯的合成 及其血液相容性研究(Ⅰ)

通过十八烷基聚氧乙烯和环氧氯丙烷的封端反应制备了α-环氧基-ω-十八烷基聚氧乙烯大单体.并采用BF     

三维超音进气道内外流场的数值模拟

用区域分裂有限体积法求解了三维Ｅｕｌｅｒ方程和Ｎａｖｉｅｒ－Ｓｔｏｋｅｓ方程。空间方向采用Ｒｏｅ平均算法，时间方向采用Ｒｕｎｇｅ－Ｋｕｔｔａ方法。对某飞航导弹的全弹身－进气道流场和某型号战斗机进气道内外流场进行了计算，得出了满意的结果。