垂直耦合自组织InAs双量子点中激子能的计算

在有效质量近似条件下研究了垂直耦合的自组织InAs/GaAs量子点的激子态.在绝热近似条件下，采用传递矩阵方法计算了电子和空穴的能谱.通过哈密顿量矩阵的对角化，对电子和空穴间的库仑相互作用进行了精确处理.讨论了两量子点间的垂直距离对激子基态能的影响.从基态波函数概率分布的角度，讨论了激子的束缚能.计算了重空穴和轻空穴激子的基态能随外部垂直磁场变化的函数关系.计算了量子点大小（量子点半径）对激子能的影响. 关键词： 量子点 激子 对角化     

MATHEMATICAL MODEL OF A JUNCTION BETWEEN LINEAR ELASTOMER AND THIN PLATE

（聂玉峰）（聂铁军）（封建湖）ＭＡＴＨＥＭＡＴＩＣＡＬＭＯＤＥＬＯＦＡＪＵＮＣＴＩＯＮＢＥＴＷＥＥＮＬＩＮＥＡＲＥＬＡＳＴＯＭＥＲＡＮＤＴＨＩＮＰＬＡＴＥ￥ＮｉｅＹｕｆｅｎｇ；ＮｉｅＴｉｅｊｉｕｎ；ＦｅｎｇＪｉａｎｈｕ（ＤｅｐａｒｔｍｅｎｔｏｆＡｐｐ...     

光弹塑性等倾线角度的判读一法

本文提出并证明了一套测定光弹塑性模型中任一点的等倾线角度的方法     

Specific Heat Properties of Proton Transfer in Hydrogen Bonded Systems

The thermodynamic properties of proton transport along hydrogen-bonded systems at finite temperatures have been studied by our model. We first derive the dynamic equations of the proton transport and find the solutions and the free energy of the systems. Finally, we obtain the specific heats of the hydrogen bonded systems, resulting from the motion of the soliton, by using transfer integral way. The theoretical value is basically consistent with the experimental data.     

新型无机离子交换剂的研究：Ⅴ.偏磷酸铈的离子交换色谱法应用

新型无机离子交换剂的研究Ⅴ．偏磷酸铈的离子交换色谱法应用苏政权（广东药学院预防医学系卫生化学教研室广州５１０２２４）封惠侠（河南信阳教育学院化学系河南４６４０００）张秀莲（广东教育学院化学系广州５１０３０３关键词离子色谱偏磷酸铈分离中图分类号Ｏ６５７...     

Fabrication and Characterization of ZnO-Based Film Bulk Acoustic Resonator with a High Working Frequency

We report on the fabrication and characterization of a ZnO-based film-bulk acoustic-resonance device utilized as biosensor. The device has a multilayer structure which consists of piezoelectric element (Au/ZnO/Pt) and a Bragg-reflection-layer acoustic isolation consisting of multilayers of ZnO/Pt. Dielectric measurements have revealed that the device has a very high working frequency (up to -3.1 GHz), meaning that the device may have a higher sensitivity than the devices reported in the literature.     

以2，2，6，6－四甲基哌啶酮氮氧自由基为自旋探针研究烯烃聚合物的链段运动

用混合型Ｚｉｅｇｌｅｒ－Ｎａｔｔａ催化剂，合成了多种用作原油减阻剂的烯烃聚合物，研究发现Ａｌ（ｉＢｕ）＿３／ＡｌＥｔ＿２Ｃｌ的摩尔比在２－３／７－８，反应时间约为１ｈ左右，能得分子量较大的聚合物，用２，２，６；６－四甲基哌啶酮氮氧自由基为自旋探针，研究了烯烃聚合物的链段运动，发现减阻效率和链段的柔顺性有密切关系。     

基于参数化水平集法的材料非线性子结构拓扑优化

针对利用传统水平集法进行非线性结构拓扑优化计算过程复杂及计算效率低等问题,将参数化水平集方法引入材料非线性结构拓扑优化中。通过全局径向基函数插值初始水平集函数,建立了以插值系数为设计变量、结构的应变能最小为目标函数、材料用量为约束条件的材料非线性结构拓扑优化模型,利用有限元分析对材料非线性结构建立平衡方程,并用迭代法求解。同时,采用子结构法划分设计区域为若干个子区域,将全自由度平衡方程的求解分解为缩减的平衡方程和多个子结构内部位移的求解,减小了计算成本。算例表明,这种处理非线性关系的方法可以在保证数值稳定的同时提高计算效率,得到边界清晰、结构合理的拓扑优化构形。     

Room-Temperature Operation of 2.4 μm InGaAsSb/A1GaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

GaSb-based 2.4μm InGaAsSb/AIGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35 Ga0.65As0.1Sb0.9/Al0.35 Ga0.65 As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide i-ram-long cavity is 28roW, and the threshold current density is 400A/cm2 under continuous wave operation mode at room temperature.