图形衬底量子线生长制备与荧光特性研究

报道了在V型槽图形衬底上利用分子束外延技术外延生长的GaAs/AlGaAs量子线.外延截面在扫描电子显微镜下可以看到在V型槽底部形成了弯月型量子线结构,量子线尺寸约为底边60 nm高14 nm的近三角形.低温87 K下光致发光谱测试在793.7和799.5 nm处出现峰值,验证了量子线的存在.理论近似计算结果显示,相比等宽度量子阱有8 meV的蓝移正是由于横向量子限制引起的. 关键词： V型槽图形衬底 量子线 GaAs     

酞菁锌的电子光谱和三阶非线性光学性质

用ＩＮＤＯ／ＳＤＣＩ方法研究了酞菁锌的电子结构，紫外－可见光谱，三阶三线性光学系数及其色散效应。发现由于酞菁锌中Ｚｎ（Ⅱ）对γ的贡献很小使酞菁锌与酞菁的＜γ＞几乎相等。根据我们的计算结构对此进行了合理的解释。     

纯化对三元无皂共聚胶粒性质的影响

以离子交换和高速离心两方法纯化含不同功能基的三元无皂共聚胶乳,用ＴＥＭ和电导滴定检测比较了以上两方法的纯化效果,同时考察了这两种纯化方法对三元无皂胶粒形态,大小及表面功能其量的影响。研究发现,只有通过多次离心－倾析－再分散过程才能将胶乳所有杂质除去。离子交换和离心纯化不影响胶粒形态大小,而离心纯化使粒表面功能其量发生显著变化。     

Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

A resonant cavity-enhanced （RCE） quantum dot （QD） field-effect transistor （RCEQDFET） is designed for single- photon detection in this paper. Adding distributed Bragg reflection （DBR） mirrors to the single-photon detector （SPD）, we improve the light absorption efficiency of the SPD. The effects of the reflectivity of the mirrors, the thickness and light absorption coefficient of the absorbing layer on the detector＇s light absorption efficiency are investigated, and the resonant cavity is determined by using the air/semiconductor interface as the mirror on the top. Through analyzing the relationship between the refractive index of AlxGal_xAs and A1 component, we choose A1As/Alo.15Gao.85As as the material of the mirror on the bottom. The pairs of A1As/Alo.15Gao.85As film are further determined to be 21 by calculating the reflectivity of the mirror. The detector is fabricated from semiconductor heterostructures grown by molecular beam epitaxy. The reflection spectrum, photoluminescence （PL） spectrum, photocurrent response, and channel current of the detector are tested and the results show that the RCEQDFET-SPD designed in this paper has better performances in photonic response and wavelength selection.     

基于四阶半离散中心迎风格式的虚拟流方法的应用

给出了求解多维无粘可压Euler方程组的四阶半离散中心迎风格式,该格式根据非线性波在网格单元边界上传播的局部速度来更准确地估计局部Riemann的宽度,避免了计算网格的交错,降低了格式的数值粘性。同时,考虑到Level Set函数能隐式地追踪到界面的位置,而虚拟流的构造能隐式地捕捉到界面的边界条件,因此再将新的四阶半离散中心迎风格式与Level Set方法以及虚拟流方法相结合,成功地处理了非反应激波和多介质流中爆轰间断的追踪问题。     

Room-Temperature Operation of 2.4 μm InGaAsSb/A1GaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

GaSb-based 2.4μm InGaAsSb/AIGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35 Ga0.65As0.1Sb0.9/Al0.35 Ga0.65 As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide i-ram-long cavity is 28roW, and the threshold current density is 400A/cm2 under continuous wave operation mode at room temperature.     

半导体自组织量子点量子发光机理与器件

介绍了自组织量子点单光子发光机理及器件研究进展.主要内容包括：半导体液滴自催化外延GaAs纳米线中InAs量子点和GaAs量子点的单光子发光效应、自组织InAs/GaAs量子点与分布布拉格平面微腔耦合结构的单光子发光效应和器件制备,单量子点发光的共振荧光测量方法、量子点单光子参量下转换实现的纠缠光子发射、单光子的量子存储效应以及量子点单光子发光的光纤耦合输出芯片制备等.     

双曲型守恒律的一种五阶半离散中心迎风格式

给出一种求解双曲型守恒律的五阶半离散中心迎风格式.对一维问题,该格式以五阶中心WENO重构为基础;对二维问题,用逐维计算的方法将五阶中心WENO重构进行推广.时间方向的离散采用Runge-Kutta方法.格式保持了中心差分格式简单的优点,即不用求解Riemann问题,避免进行特征分解.用该格式对一维和二维Euler方程进行数值试验,结果表明该格式是高精度、高分辨率的.     

Extremely Low Density InAs Quantum Dots with No Wetting Layer

Extremely low density InAs quantum dots （QDs） are grown by molecular beam droplet epitaxy. The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs （4× 10^6 cm^-2） are formed by depositing 0.65 monolayers （MLs） of indium. This is much less than the critical deposition thickness （1.7 ML）, which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence linewidth of about 24 meV is insensitive to cryostat temperatures from IO K to 250K. All measurements indicate that there is no wetting layer connecting the QDs.     

Specific Heat Properties of Proton Transfer in Hydrogen Bonded Systems

The thermodynamic properties of proton transport along hydrogen-bonded systems at finite temperatures have been studied by our model. We first derive the dynamic equations of the proton transport and find the solutions and the free energy of the systems. Finally, we obtain the specific heats of the hydrogen bonded systems, resulting from the motion of the soliton, by using transfer integral way. The theoretical value is basically consistent with the experimental data.