Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy

Short period InAs（4ML）/GaSb（SML） superlattices （SLs） with InSb- and mixed-like （or Ga1-xInxAs1-ySby- like） interfaces （IFs） are grown by molecular-beam epitaxy （MBE） on （001） GaSh substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction （XRD） and atomic force microscopy （AFM） demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence （PL） spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties.     

An effective reflectance method for designing broadband antireflection films coupled with solar cells

The solar spectrum covers a broad wavelength range, which requires that antireflection coating (ARC) is effective over a relatively wide wavelength range for more incident light coming into the cell. In this paper, we present two methods to measure the composite reflection of SiO₂/ZnS double-layer ARC in the wavelength ranges of 300-870 nm (dual-junction) and 300-1850 nm (triple-junction), under the solar spectrum AM0. In order to give sufficient consideration to the ARC coupled with the window layer and the dispersion effect of the refractive index of each layer, we use multi-dimensional matrix data for reliable simulation. A comparison between the results obtained from the weighted-average reflectance (WAR) method commonly used and that from the effective-average reflectance (EAR) method introduced here shows that the optimized ARC through minimizing the effective-average reflectance is convenient and available.     

基于四阶半离散中心迎风格式的虚拟流方法的应用

给出了求解多维无粘可压Euler方程组的四阶半离散中心迎风格式,该格式根据非线性波在网格单元边界上传播的局部速度来更准确地估计局部Riemann的宽度,避免了计算网格的交错,降低了格式的数值粘性。同时,考虑到Level Set函数能隐式地追踪到界面的位置,而虚拟流的构造能隐式地捕捉到界面的边界条件,因此再将新的四阶半离散中心迎风格式与Level Set方法以及虚拟流方法相结合,成功地处理了非反应激波和多介质流中爆轰间断的追踪问题。     

基于无振荡中心格式求解非均匀道路上的多车种LWR交通流模型

将无振荡中心格式推广于多车种LWR交通流模型,给出了一种求解非均匀道路上模型的高分辨率数值方法.为保证格式无振荡,采用非线性限制器近似离散斜率.通量的离散微分可以按分量来近似,使得雅可比矩阵的计算都可以避免.方法具有形式简单、计算量小的优点.应用该方法对信号灯控制等问题进行数值模拟,验证了方法的稳定性和有效性.     

求解对流扩散方程的低耗散中心迎风格式

以四阶CWENO重构为基础,通过将对流项采用低耗散中心迎风格式离散,扩散项采用四阶中心差分格式离散,对得到的半离散格式采用四阶龙格库塔方法在时间方向上推进,得到一种求解对流扩散方程的高阶有限差分格式.数值结果验证了该格式的四阶精度和基本无振荡特性.     

一种基于新型斜率限制器的理想磁流体方程的高分辨率熵相容格式

针对磁流体动力学方程, 通过分析数据重建所需的条件, 构造一种基于MUSCL(Monotone Upstream-Centred Scheme for Conservation Laws)型重建方法的斜率限制器, 获得了一种求解理想磁流体动力学方程的高分辨率熵相容格式。该格式在解的光滑区域具有高精度; 在解的间断区域可以合理地控制耗散, 可有效避免非物理现象的产生。采用熵稳定格式、熵相容格式和新的高分辨率熵相容格式对一维、二维理想磁流体动力学方程进行数值模拟。结果表明: 新格式能准确地捕捉解的结构, 且具有无振荡、高分辨、鲁棒等特性。     

Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy

By optimizing the V/III beam-equivalent pressure ratio, a high-quality InAs/GaSb type-II superlattice material for the long-wavelength infrared (LWIR) range is achieved by molecular beam epitaxy (MBE). High-resolution x-ray diffraction (HRXRD), atomic force microscopy (AFM), and Fourier transform infrared (FTIR) spectrometer are used to characterize the material growth quality. The results show that the full width at half maximum (FWHM) of the superlattice zero-order diffraction peak, the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks, and the surface roughness get the best results when the beam-equivalent pressure (BEP) ratio reaches the optimal value, which are 28 arcsec, 13 arcsec, and 1.63 Å, respectively. The intensity of the zero-order diffraction peak is strongest at the optimal value. The relative spectral response of the LWIR detector shows that it exhibits a 100% cut-off wavelength of 12.6 μm at 77 K. High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector.     

丙烯聚合负载型Ziegler-Natta催化剂的ESR研究

用ESR方法对MgCl₂负载的钛系Ziegier-Natta催化剂进行了研究,获得了分辩率较好的谱图,并结合前人的工作将信号的归属同钛原子在MgCl₂上的负载情况对应起来.同时考察了内外给电子化合物对ESR谱图的影响,探讨了它们可能的作用机理.     

InGaAs/GaAs应变脊形量子线分子束外延非平面生长研究

提出了新型InGaAs/GaAs应变脊形量子线结构．这种应变脊形量子线结合了非平面应变外延层中沿不同晶向能带带隙的变化、非平面生长应变层In组分的变化，以及非平面外延层厚度的变化等三方面共同形成的横向量子限制效应的综合作用．在非平面GaAs衬底上用分子束外延生长了侧面取向为（113）的脊形AlAs/In GaAs/AlAs应变量子线．用10K光致荧光谱测试了其发光性质．用Kronig-Penney模型近似计算了这种应变脊形结构所具有的横向量子限制效应，发现其光致荧光谱峰位的测试结果，与计算结果相比，有10meV的“蓝移”．认为这一跃迁能量的“蓝移”是上述三方面横向量子限制效应综合作用的结果 关键词：     

On the Correlation between the Blue Shift of Hydrogen Bonding and the Proton Donor-Proton Acceptor Distance

It is demonstrated that in all types of hydrogen bonds (X—H…Y) there is a balance between the long-range attractive orbital interactions and short-range Pauli/nucleus repulsions. When the proton acceptor approaches the proton donor from distance, the hydrogen bonding energy becomes more negative at relatively large distance, goes through a minimum, and then starts to become less negative when the short-range repulsive forces come into effect.Meanwhile, the X--H bond length increases at relatively large distances, goes through a maximum and starts to shorten when the short-range repulsive forces come into effect. Whether the hydrogen bond is red or blue shifted is dictated by the energy minimum position. If at the energy minimum position the X—H bond length is shorter than that for the free monomer, the hydrogen bond is blue shifted and vice versa. Further studies demonstrate that the recent report about the correlation of C—H bond lengths with proton donor-acceptor distance in F3C—H…OH2 and F3C—H…Cl^- is not fully correct because the authors conducted an inappropriate comparison. Furthermore, it is shown for the first time that the Pauli/nucleus repulsion theory is applicable to the blue-shifted hydrogen bonds in the X—H…π complexes and the blue-shifted lithium bonds in the X—Li…Y complexes.