超薄有源层谐振腔增强型调制器

提出利用超薄有源层制备高性能谐振腔增强型(RCE)半导体电吸收调制器件的可能性,并与波导型器件进行性能对比;对透射和反射两种类型器件优化分析了器件结构,进行了性能比较,结果表明:在插入损耗相当的情况下,反射式器件具有更高的调制对比度.     

基于下变频和IQ解调的外差型相位敏感光时域反射技术的模式识别EI北大核心CSCD

基于模拟下变频器、数字IQ解调和反向传播(BP)神经网络,采用现场可编程门阵列结合数字信号处理器(FPGA+DSP)的数据采集和处理架构,提出了一种全嵌入式高信噪比(SNR)、高分辨率和低成本的外差型相位敏感光时域反射(Φ-OTDR)技术模式识别方法。针对外差型Φ-OTDR技术,使用DSP、FPGA及其外围硬件电路替代原有的GHz级高速采集卡和信号发生器,减小了系统的体积和成本。在此基础上,设计了基于时空域二维图提取形态学特征的方法,并采用BP神经网络进行分类识别;所提方法相对于传统的针对一维信号进行模式识别的方法误报率更低、识别率更高。实验结果表明,所设计的基于FPGA+DSP全嵌入式并行信号处理架构满足实时监测的要求,SNR高达12.43dB,事件识别准确率达到97.78%。     

Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors

In this report, the effect of temperature on the In As/Al Sb heterojunction and high-electron-mobility transistors(HEMTs) with a gate length of 2 μm are discussed comprehensively. The results indicate that device performance is greatly improved at cryogenic temperatures. It is also observed that the device performance at 90 K is significantly improved with 27% lower gate leakage current, 12% higher maximum drain current, and 22.5% higher peak transconductance compared to 300 K. The temperature dependence of mobility and the two-dimensional electron gas concentration in the In As/Al Sb heterojunction for the temperature range 90 K-300 K is also investigated. The electron mobility at 90 K(42560 cm2/V·s)is 2.5 times higher than its value at 300 K(16911 cm~2/V·s) because of the weaker lattice vibration and the impurity ionization at cryogenic temperatures, which corresponds to a reduced scattering rate and higher mobility. We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99 × 10~(12) cm~(-2) at 300 K to 1.7 × 10~(12) cm~(-2) at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant ?Ec.     

Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy

We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm^2 ridge waveguide laser, the lazing wavelength is centred at 1.508 μm and the threshold current density is 667 A/cm^2 under pulsed operation. The pulsed lasers can operate up to 286 K.     

Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory

In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260 nm is fabricated with standard 0.18 μm CMOS processing line. Then we successfully manufacture a chalcogenide random access memory device using this seamless sub-micro W heating electrode. The results show good electrical performance, e.g. the reset current of 1.3mA and the set/reset cycle up to 10^9 have been achieved.     

斯特林制冷机振动数学模型的Laplace变换及仿真

通过对斯特林制冷机振动系统的研究,建立了系统的振动方程并进行了相应的Laplace变换,结合斯特林制冷机实际的工作状况,给出了振动系统在不同阻尼比条件下的仿真结果,该结论对今后斯特林制冷机的设计有一定的指导意义。     

半圆形金属光栅的矢量模态理论

采用了Ｈａｎｓｅｎ矢量波函数理论研究半圆形金属光栅的衍射效率问题，该方法适用于任意入射方向，任意偏振态入射场衍射问题的研究，结果表明，当入射光为ｐ或ｓ型偏振光时，其结果与文献（１）的结果相同。     

高阶多维半离散中心迎风格式及其应用

提出了求解多维对流-扩散方程的四阶半离散中心迎风格式。该格式以中心加权基本无振荡(CWENO)重构为基础,同时考虑到在Riemann扇内波传播的局部速度,从而更加准确地估计出了局部Riemann扇的宽度,最终既回避了网格的交错,又降低了格式的数值粘性,建立了介于迎风格式和中心格式之间的半离散中心迎风格式。本文还将该四阶半离散中心迎风格式与涡度-流函数方法相结合,有效地求解了二维不可压Euler方程组和Navier-Stokes方程组。     

热传导问题灵敏度分析的伴随法

在热传导灵敏度分析的直接法的研究基础上，进一步探讨了稳态和瞬态热传导问题灵敏度分析的伴随法.推导了伴随法的计算列式，对于瞬态热传导问题，研究了瞬态约束处理的关键点方法，并提出伴随方程的精细积分解法。算例表明，稳态问题灵敏度计算，伴随法与直接法的结果是一致的；瞬态问题灵敏度计算，两种方法的精度相当。     

La0.6Pr0.05Fe11.5-xCoxSi1.5合金的磁性和磁热效应

使用电弧炉熔炼法制备La0.6Pr0.05Fe11.5-xCoxSi1.5(x=0,0.1,0.2,0.3,0.4,0.5和0.6)系列合金.XRD分析与SEM成分分析表明该系列合金中除含有少量富镧相(P4/nmm)和α-Fe相外.均由NaZh13型立方结构单相组成.品格常数随着Co含量的增加基本保持不变.磁性测量表明该系列合金的Tc随着Co含母的增加旱线性增加,当x=0.6时,Tc达264 K.合金的升、降温磁化曲线随着Co含量的增加逐渐重合,即表明该系列合金的热滞随着Co含量的增加而减小;利用Maxwell方程计算得出在x=0时,合金在△B=1.5 T的外磁场下-△Sm达到38.4 J·kg-1·K-1.这种磁熵变来源于外磁场引起的一级相变,随着Co含量的增加-△Sm线性减小,这是由于Co含量的增加使合金的磁相变出现由一级相变向二级相变转变.