Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

GaAs基GaAsSb/GaInAs双层量子阱的发光

嵌入GaAs中的GaAsSb／GaInAs量子阱因其在1．3～1．5μm光通信波段发光的潜力而受到关注,我们研究了一系列MBE生长的GaAsSb／GaInAs量子阱样品的光致发光,发现所有样品在室温下都出现了一个较强的、波长在1．3μm附近的低能峰和一个较弱的高能峰。变温及变激发功率的荧光谱测量研究发现,高能峰只有在150K以上的测试条件下才能观测到,并且其相对强度随着温度的升高而增加,其调制光谱显示出第一类跃迁的特征。他们建立了理论模型,计算的结果支持将这一发光峰指派为GaInAs层内电子的基态与重空穴激发态间的跃迁,并与实验数据吻合得很好。同时初步讨论了改善1．3μm的低能峰发光的方法。     

Investigation of active-region doping on InAs/GaSb long wave infrared detectors

The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W.     

处方应用三种葛根水煎液的二维相关红外光谱分析

中药是复杂的化学体系,建立快速、有效的分析方法有助于中药水煎液的实时质量控制。葛根在处方中常用有三种,分别为粉葛、野葛和煨葛(葛根炮制品),且传统应用中多采用水煎煮的方式,因此,采用傅里叶变换红外光谱技术(FTIR),二阶导数光谱(SD-IR),结合二维相关红外光谱(2D-IR)对三种葛根水煎液进行快速分析。结果表明,通过FTIR和SD-IR光谱能够将粉葛水煎液明显区别于野葛和煨葛水煎液。经过2D-IR分析,发现野葛经过煨制后水煎液化学成分发生了变化,二者在主要的自动峰和交叉峰的位置和强度方面存在较大差异,在1 800~1 300 cm-1范围内,野葛水煎液中最强的自动峰为1 556 cm-1,次强峰为1 561 cm-1,而在煨葛水煎液中最强自动峰为1 563 cm-1,次强为1 572 cm-1,再次为1 556 cm-1。另外,在野葛水煎液中出现了明显的1 536和1 634 cm-1自动峰,二者的强度相当。野葛及煨葛水煎液的2D-IR光谱中,出现的自动峰1 448和1 518 cm-1的相对强度有较大的差异。在野葛水煎液的2D-IR光谱中,交叉峰(1 518,1 561)和(1 518,1 563) cm-1强于煨葛水煎液中相应峰。凭借2D-IR自动峰和交叉峰可以较直观地鉴别野葛和煨葛水煎液,并揭示二者相应各官能团的变化规律,能够为葛根在临床处方应用过程中,水煎液的快速质量控制提供依据。利用FTIR,SD-IR结合2D-IR的整体性和宏观指纹性,可以为中药等复杂体系的逐级鉴别提供快速、准确的方法和手段。     

Effect of Nonradiative Recombination on Carrier Dynamics in GaInNAs/GaAs Quantum Wells

The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence （TRPL） and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.     

新型小周期wiggler的研制

本文提出一种新型小周期wiggler结构,它是由带铁芯的双绕螺旋片组成,产生圆极化磁场,对周期为10mm,长100mm的wiggler原型的磁场进行测量,横向磁场可达1KG,根据现有的加速器,加速电压为400—500keV,提出了输出频率为190GHz的小周期wiggler自由电子激光放大器设计。 关键词：     

Optical spectra and Exciton State in Vertically Stacked Self—Assembled Quantum Discs

We study the oscillator strengths of the optical transitions of the vertically stacked self-assembled InAs quantum discs.The oscillator strengths change evidently when the two quantum discs are far apart from each other.A vertically applied electric field affects the oscillator strengths severely.while the oscillator strengths change slowly as the radius of one disc increases.We also studied the excitonic energy of the system.including the Coulomb interaction.The excitonic energy increases with the increasing radius of one disc.but decreases as a vertically applied electric field increases.     

Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device

In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing （CMP） of Ge2Sb2Te5 phase change films. We use reactive ion etching （RIE） as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge2Sb2Te5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, currentvoltage characteristics test demonstrates that the set threshold voltage is reduced from 13 V to 2.7V and the threshold current from 0.1 mA to 0.025 mA. Furthermore, we analyse the RIE cleaning principle and compare it with the ultrasonic method.     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

GaAs／GaInNAsSb超晶格性能的影响

用Keafing的价力场(valence force field)模型和蒙特卡罗方法计算了GaAs／GaInNAsSb超晶格中键的分布、原子的精确位置以及应变．用折叠谱(foldedspectrummethod)合Williamson经验赝势法计算了GaAs／GaInNAsSb超晶格应变条件下的电子结构．讨论了N和Sb原子以及超晶格单分子层数对电子结构的影响．发现导带底电子态在N原子周围的局域化减小了光跃迁矩阵元，从而影响了该超晶格的发光性能．计算并讨论了超晶格的电子和空穴的有效质量．