Synthesis and surface reactivity of phosphide nanocrystals

Gap and InP nanocrystals were synthesized from Na₃P and GaCI₃ at low temperature (80–100°C) and atmospheric pressure. The samples were characterized by XRD and TEM measurements. The surface reactivity of Gap nanocrystals was studied by heating in N₂. The weight of the nanocrystals increased at the temperature between 370°C and 480°C. It can be concluded that N, molecule was absorbed and reactivated on the surface of Gap nanocrystals. Keywords: gallium phosphide, indium phosphide, nanocrystal, surface reactivity.     

Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates.These devices exhibit simultaneously 2.1 GHz and 16.2 dB RF-gain at 21 GHz with a 450 thin-film resistor and a bypass capacitor integrated on a chip.     

Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been monolithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method.Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.     

一种利用光电流和光透过曲线测量电吸收调制器插入损耗因素的方法

提出一种新颖的方法用于测量电吸收调制器（electroabsorption modulator,EAM）各种因素造成的插入损耗.此方法仅需要测量波长相关的光电流（I_ph-λ）和光透过功率（P-λ）的数据,通过最小二乘法拟合出结果.理论分析表明此方法较精确,实验表明测试结果与理论拟合结果自洽得很好. 关键词： 电吸收调制器 插入损耗 吸收曲线 光生电流     

用于10Gb/s传输系统的电吸收调制器与分布反馈激光器集成光源

采用超低压(22×１０^２Pa)选择区域生长(selective area growth, SAG)金属有机化学气相沉积(metal-organic chemical vapor deposition, MOCVD)技术成功制备了应变型InGaAsP/InGaAsP电吸收调制器(electroabsorption modulator, EAM)与分布反馈激光器(distribute feedback laser, DFB)单片集成光源的新型光电器件.实验结果表明，采用该技术制备的集成器件表现出了良好的性能：激射阈值为19 mA，出光功率接近7 mW，边模抑制比(side-mode suppression ratio, SMSR)大于40 dB，将该集成器件出射光耦合进普通单模光纤后进行测量，获得了16 dB的消光比，器件3 dB响应带宽达到了10 GHz以上.将该集成器件完全封装后成功进行了10 Gb/s非归零码(non-return zero, NRZ)的传输实验：在误码率为10^-10的传输条件下于普通单模光纤中传输了53.3 km，色散代价小于1.5 dB，动态消光比大于8 dB，且眼图清晰张开. 关键词： 超低压 选择区域生长 集成光电子器件 10 Gb/s     

基于可调谐激光二极管吸收光谱的乙炔在线检测系统

基于可调谐半导体激光吸收光谱技术,研制了一种近红外乙炔气体检测系统。通过分析近红外波段乙炔分子的吸收谱线特性,选择了1.534 μm附近乙炔分子的吸收峰作为吸收谱线。该系统主要由分布反馈激光器、激光器驱动器、单光程对射式气室、光电探测模块及数字式锁相放大器构成。为了测试该检测系统的性能,配备了乙炔气体样品并开展了气体检测实验。实验结果显示,该系统的最小检测下限为0.02%;在体积分数为0.02%～1%范围内,二次谐波幅值与乙炔气体浓度呈现出良好的线性关系。通过长达20 h的稳定性实验测试了检测系统稳定性。鉴于近红外波段石英光纤传输损耗很小,可以将气室及光路部分与电路部分分离,从而可以进行远程气体检测,这是基于量子级联激光器、热光源的乙炔检测系统难以实现的。该系统采用了自主研制的分布反馈激光器驱动器和锁相放大器,结构简单,性价比高,便与集成,在工业现场乙炔浓度检测方面有着良好的应用前景。     

基于1 654 nm分布反馈激光器的甲烷检测系统

基于可调谐半导体激光吸收光谱技术及波长调制技术,采用波长为1 654 nm的分布反馈激光器,结合开放式光学探头以及高灵敏度的铟镓砷光电探测器,研制了近红外甲烷气体检测系统。自主设计研发了分布反馈激光器驱动电路,主要包括模拟PID温度控制电路与电流驱动电路。其中,温度控制电路具有较高的控制精度及稳定性,长时间工作时激光器温度波动小于±0.02 ℃,温度与激光器波长呈线性变化。温度不变时,改变驱动电流可以使激光器中心波长线性变化,同时还提供了5 kHz正弦波和10 Hz锯齿波的调制信号,用于谐波检测。为了提取差分信号的一次谐波及二次谐波,研制了正交锁相放大器,一次谐波和二次谐波的提取误差分别为3.5%和5%。系统中采用的开放式光电探头通过一次反射,使有效吸收光程增加了一倍,达到了40 cm。通过对1%～5%的甲烷气体进行检测,成功提取了一次及二次谐波,得到了气体浓度与谐波信号幅值的拟合关系曲线。在更换不同输出波长的激光器后,该系统还具有检测其他气体的能力。     

Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

A novel integratable and high speed InGaAsP multi-quantum well （MQW） complex-coupled distributed feedback （DFB） laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0. 14 W·A^-1 and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.     

Ⅲ–Ⅴ/Si Hybrid Laser Array with DBR on Si Waveguide

We report an eight-channel silicon evanescent laser array operating at continuous wave under room temperature conditions using the selective-area metal bonding technique.The laser array is realized by evanescentl.y coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed Bragg reflector gratings.The lasers have emission peak wavelengths in a range of 1537-1543 nm with a wavelength spacing of about 1.0 nm.The thermal impedances Z_T of these hybrid lasers are evidently lower than those DFB counterparts     

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.