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Using the four-probe method, we investigate the electrical conductivity of Cu3N under high pressure with the diamond anvil cell. Cu3N is a semiconductor at ambient pressure showing a band gap about l eV. With the application of quasi-hydrostatic pressures, its resistance decreases dramatically over five orders of magnitude from ambient to 9 GPa. The compound became a metal at pressure about 5.5 GPa, which is in well agreement with the recent first principle calculation. 相似文献
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Effect of Annealing on Ferroelectric Properties of Nanometre BaTiO3 Ceramics Prepared by High Pressure Sintering Method 下载免费PDF全文
Dense nanocrystalline BaTiO3 ceramics with a grain size of 5Onto are prepared under 6 GPa at 1273K using a high pressure sintering method. The sintered bulk is uniform and the relative density is above 97%. We anneal the ceramic samples in oxygen with various temperatures and for the annealing, several broadened peaks can be observed at different times without apparent grain growth. After about 378K( by dielectric measurements. However, these peaks are very different from those of coarser-grained ceramics. It is indicated that both the elimination of oxygen vacancies and the release of residual stresses caused by high pressure greatly improve the overall ferroelectric properties of BaTiO3 ceramics. The observation of nearly linear polarization hysteresis loop after anneal provides the solid evidence of ferroelectricity in these nano-sized BaTiO3 ceramics. It is believed that the absence of 90° domains and the existence of poor-permittivity nonferroelectric grain boundaries contribute to the slim loop. 相似文献
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Misfit-layered compound PbTiS3 with incommensurate modulation: Transmission electron microscopy analysis and transport properties 下载免费PDF全文
The microstructural characteristic of the misfit-layered compound PbTiS3 has been studied with transmission electron microscopy. All the incommensurate modulation-induced satellite spots and main diffraction spots of basic sublattices can be indexed systematically with a superspace group method. Finally, the relationship between the electronic transport properties and the crystal structure is discussed. 相似文献
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以性能较好的铁基结合剂为基体,加入表面未镀、镀Ni和纳米Al2O3/Ni复合镀层的金刚石,用热压烧结的方法得到铁基结合剂金刚石节块,测量了金刚石铁基结合剂节块的抗弯强度和耐磨性,采用SEM和EDS对复合镀层和金刚石表面的形貌和组分进行了表征.结果表明:在金刚石表面镀覆纳米Al2O3/Ni层后,复合镀层均匀致密,晶粒细小;在热压烧结中,复合镀层能阻止金刚石的石墨化,使金刚石和基体之间有强的化学结合,所以金刚石和铁基结合剂之间的界面结合紧密,结合剂对金刚石的把持力提高,节块的抗弯强度从468.9 MPa增加到563.8 MPa,磨耗比从349升高到700. 相似文献