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HfO2基铁电电容器,特别是TiN/HfxZr1-xO2/TiN金属-绝缘体-金属电容器,由于其良好的稳定性、高性能和互补金属氧化物半导体(CMOS)兼容性,在新一代非易失性存储器中有着广阔的应用前景。由于TiN/HfxZr1-xO2/TiN电容器的电性能与HfxZr1-xO2铁电薄膜与TiN电极层界面质量相关,因此控制TiN/HfxZr1-xO2/TiN异质结构的制备和表征至关重要。本文报道了一种三明治结构:HfxZr1-xO2铁电薄膜夹在两个TiN电极之间的新的制备方法,通过超高真空系统互连的原子层沉积(ALD)和磁控溅射设备实现。原位生长和表征结果表明,ZrO2掺杂浓度和快速热退火温度可以调节TiN/HfxZr1-xO2/TiN异质结的铁电性能,并能很好地被互连系统监控。在该体系中,通过在HfO2中掺杂50% (molar fraction, x) ZrO2并且在600 ℃下快速热退火(RTA),获得了21.5 μC·cm-2的高剩余极化率和1.35 V的低矫顽电压。 相似文献
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High-purity aluminum titanate was synthesized via a water quenching method with waste-residue in the aluminum factory and industrial TiO2 as the main raw materials, which belongs to the comprehensive utilization of solid wastes. Compared with the conventional method, it can reduce synthesis temperature, effectively inhibit decomposition and raise the content of AT; the addition of tiny silicon powder can improve the sintering and optimize the properties of AT. The crystalline phase structure and microstructure of each sample were characterized with XRD and SEM methods; the content of each crystalline phase in each sample was confirmed with Rietveld Quantification method; the properties of each sample were also tested. The experimental results showed that No. 4 is the optimum specimen, with the corresponding mass ratio of Al2O3/TiO2 to be 1.27 and the content of AT of 97.2 wt%. The addition of optimum tiny silicon powder is confirmed to be 8wt%; its corresponding bulk density is 2.63 g/cm^3, bending strength is 46.34 MPa, and the retention of one thermal vibration bending strength is 71.5%. 相似文献
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线性神经网络应用于维生素B族4组分同时测定 总被引:15,自引:0,他引:15
报道了一种基于卡尔曼滤波的线性神经网络用于B族维生素混合组分的定量同时测定,用相关系数和标准偏差从原始紫外光谱数据中挑选11个波长点供线性神经网络处理,以极少的迭代次数达到较高的精度,预测结果较好,相关系数大于0.99983,标准偏差0.11301. 相似文献
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采用阳极氧化法和电沉积法制备出具有可见光响应的ZnFe2O4/TiO2纳米管阵列电极.用环境扫描电子显微镜(ESEM)、X-射线衍射(XRD)和透射电子显微镜(TEM)对制备的ZnFe2O4/TiO2纳米管阵列电极的表面形貌和结构进行了表征.结果表明,该方法成功地将ZnFe2O4纳米颗粒均匀分散在TiO2纳米管中,分布在管口处的较少.同时,详细讨论了反应物浓度、沉积时间、循环次数、沉积电压对ZnFe2O4/TiO2纳米管阵列电极性能的影响.通过在可见光下降解苯酚评价了复合电极的光催化活性,实验结果表明:由于ZnFe2O4和TiO2之间的协同效应,复合电极的光响应范围扩展到了可见光区域,光电催化活性提高1.5~2倍. 相似文献