Reference-frame-independent quantum key distribution of wavelength division multiplexing with multiple quantum channels

Reference-frame-independent quantum key distribution (RFI-QKD) can allow a quantum key distribution system to obtain the ideal key rate and transmission distance without reference system calibration, which has attracted much attention. Here, we propose an RFI-QKD protocol based on wavelength division multiplexing (WDM) considering finite-key analysis and crosstalk. The finite-key bound for RFI-QKD with decoy states is derived under the crosstalk of WDM. The resulting secret key rate of RFI-QKD, which is more rigorous, is obtained. Simulation results reveal that the secret key rate of RFI-QKD based on WDM is affected by the multiplexing channel number, as well as crosstalk between adjacent channels.     

Design, synthesis, and in vitro evaluation of potential West Nile virus protease inhibitors based on the 1-oxo-1,2,3,4-tetrahydroisoquinoline and 1-oxo-1,2-dihydroisoquinoline scaffolds

The 1-oxo-1, 2, 3, 4-tetrahydroisoquinoline and 1-Oxo-1, 2-dihydroisoquinoline scaffolds were utilized in the design and solution phase synthesis of focused libraries of compounds for screening against West Nile Virus (WNV) protease. Exploratory studies have led to the identification of a WNV protease inhibitor (a 1-oxo-1, 2-dihydroisoquinoline-based derivative, 12j) which could potentially serve as a launching pad for a hit-to-lead optimization campaign. The identified hit was devoid of any inhibitory activity toward a panel of mammalian serine proteases.     

GaN基p-i-n型雪崩探测器的制备与表征

制备和表征了p-i-n型的GaN基雪崩探测器.器件在-5V下的暗电流约为0.05 nA,-20 V下的暗电流小于0.5 nA.响应增益-偏压曲线显示,可重复的雪崩增益起始于80 V附近,在85 V左右增益达到最大为120,表明所制备的器件具有较好的质量.C-V测量用来确定载流子的分布和耗尽信息,结果显示,P型层在15 ...     

Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures

By using temperature-dependent Hall,variable-frequency capacitance-voltage and cathodoluminescence (CL) measurements,the identification of inductively coupled plasma (ICP)-induced defect states around the Al x Ga 1-x N/GaN heterointerface and their elimination by subsequent annealing in Al x Ga 1-x N/GaN heterostructures are systematically investigated.The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed.The interface state density after the ICP-etching process is as high as 2.75×10 12 cm 2 ·eV 1.The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N 2 ambient.The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.     

赤铁矿和三羟铝石吸附Cu~(2+)的红外光谱研究

应用红外光谱法,研究了不同pH值和Cu2+浓度条件下,合成赤铁矿和三羟铝石吸附Cu2+后表面羟基结构及其特征吸收峰的变化。结果表明:(1)随Cu2+浓度增加,赤铁矿表面H—O—H和OH的变形振动参与了吸附反应,Cu2+强烈地缔结在Fe—O上,形成了Fe—O—(Cu)结构。(2)酸性条件下,H+破坏了赤铁矿表面的O—H结构,NO3-促使弱峰1 131 cm-1的产生。随pH值增大,赤铁矿表面OH-逐渐由伸缩振动转变为变形振动,Fe—OH和Fe3+—O2-结构不断发生改变。(3)三羟铝石对Cu2+的吸附发生在高波位,随Cu2+浓度增大,其表面游离羟基的O—H弯曲振动、水分子的OH-伸缩振动和H—O—H弯曲振动均参与了吸附反应,Al—O基中的Al3+渐被Cu2+取代从而加强了较低波位的振动强度。(4)随pH值增加,三羟铝石Al—OH的弯曲振动和Al—O的伸缩振动逐渐发生着改变,表明吸附Cu2+后,在其表面形成了AlOCu+与AlOCuOH结构。     

Ⅲ族氮化物异质结构二维电子气研究进展

本文总结了近年来Ⅲ族氮化物半导体异质结构二维电子气的研究进展。从Ⅲ族氮化物材料晶格结构和特有的极化性质出发,重点讨论了AlGaN/GaN异质结构中二维电子气的性质,总结分析了异质结构中Al组分、势垒层厚度、应变弛豫度、掺杂等对二维电子气浓度和迁移率的影响,同时还涉及AlGaN/GaN/AlGaN,AlGaN/AlN/GaN和AlGaN/InGaN/GaN等异质结构二维电子气性质。     

AlxGa1-xN/GaN异质结构中Al组分对二维电子气性质的影响

通过用数值计算方法自洽求解薛定谔方程和泊松方程,研究了Al组分对AlxGa1-xN/GaN异质结构二维电子气性质的影响,给出了AlxGa1-xN/GaN异质结构二维电子气分布和面密度,导带能带偏移以及子带中电子分布随AlxGa1-xN势垒层中Al组分的变化关系,并用AlxGa1-xN/GaN异质结构自发极化与压电极化机理和能带偏移对结果进行讨论分析.     

Surface States in the AlxGa1-xN Barrier in AlxGa1-xN／GaN Heterostructures

Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 10^12cm^-2eV^-1, and the time constant is about 1μs. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passlvate the surface states effectively.     

POTENTIAL INVERSION PROBLEMS FOR COUPLED SYSTEM OF DOWNGOING AND UPCOMING ONE-WAY WAVE EQUATIONS

1.IntroductionInthispaperthefollowingpotentialinversionproblemisconsideredThatis,givinganimpulseatthesurfacez~0,todeterminethewavefleldpandpotentialvfromtheimpulseresponseh.Inone-dimensionalcase3byfactorizingthewaveoperator,thewavefieldcanbesplitintoupcominganddowngoingwaves,sothewaveequationcanbeeasilyreducedtoacoupledfirst-ordersystem.Thedirectproblemandthecoefficiellt-inversionproblemcanbetreatedasCauchyproblemsintimeandinthedirectionofdepthregardedasthetime-likevariable[1].Theseproblemsar…     

Patterned nucleation control in vacuum deposition of organic molecules

We report a generally applicable method to pattern organic molecules on mesoscopic scales. In our method, organic molecular beam deposition was conducted on substrate surfaces prepatterned with materials to which the organic molecules have larger binding energies in comparison to the substrate. Fully uniform nucleation control at these predefined locations can be achieved by an appropriate selection of the growth parameters including temperature and deposition rate. The physical mechanisms involved are studied by Monte Carlo simulations and stand in good agreement with the experimental findings.