有关化学、生物、工程、出版方面的部分网址

1CHEMWEB化学网(CHEMWEB)提供有关化学方面的杂志、数据库和其它服务,数据库中含有文摘、化学结构、专利和其它内容。从中查找产品目录,在线订购软件、设备和书籍。化学网(CHEMWEB)网上杂志提供最新的化学信息。浏览由化学协会举行的会议和最新事件等。浏览由MDL信息系统公司提供的化学目录。网址为:www.chemweb.com2BIOMEDENT生物医药网(Biomednet)是为生物和医药研究人员提供的国际网站,包含连接和文件发送系统,从中可查找到众多已出版的生物和医药资料和文摘,查找网上资源、工作条目、产品和辅助材料,浏览书目、软件和服务…     

《化学研究的现状、应用前景及终结目的》(13卷1期)刊误

1.第1、2页：“Nanospace”应为“NanoSpace”；“Smally”应为“Smalley”。 　　2.“作为基本动力”应为“作为规范基本动力”；“含有分散在凝胶”应为“含有分散在胶原”。     

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection,and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point.The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.     

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

We have investigated the electron affinity of Si-doped AlN films(N_(Si)= 1.0 × 10~(18)–1.0 × 10_(19)cm~(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition(MOCVD) under low pressure on the ntype(001)6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy(UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy(XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.     

一维光伏空间灰孤子及其稳定性研究

从考虑背景光的光伏作用后的光束在光伏媒质中传播的方程出发,证明了在折射率改变为正的光伏媒质中也可以形成灰孤子。光束以灰孤子状态在光伏晶体中传播时,其横向相位必须具有一个与光强分布有关的形式分布,表达式为φ（s）=v[η-∫y^-2（η）dη],其中v是灰孤子的横向运动速度,η是无量纲化坐标,y（η）是归一化的光场振幅。分别讨论了光束灰度、光强振幅、信号光与背景光的有效Glass系数之比R对一维的光伏空间灰孤子宽度、横向总相移和横向运动速度的影响,并分析了光伏灰孤子的稳定性。当光束的灰度m为0时,这一理论可直接退化为光伏暗孤子的理论。