《强激光与粒子束》杂志19999年度的影响因子及其在全科技期刊中的位置

据中国科技住处研究所2000的11月出版的《1999年度中国科技期刊引证报告》中公布的信息表明,《强激光与粒子束》杂志在19999年继续人选为该所当年的1372中统计源期刊。其影响因子值为0。194,名列全国科技期刊的第543位,而在“物理学”类专业的29种统计源刊中名列第18位。     

本刊加入《中国学术期刊(光盘版)》和“中国期刊网”的声明

为适应我国信息化建设需要,扩大作者学术交流渠道,本刊加入《中国学术期 刊(光盘版)》和“中国期刊网”。作者著作权使用费与本刊稿酬一次性给付。如作者不同意 将文章编入该数据库,请在来稿时声明,本刊将作适当处理。 本刊加入万方数据(ChinaInfo)系统科技期刊群的声明 　　为了实现科技期刊编辑、出版发行工作的电子化,推进科技信息交流的网络化进程,我刊现 已入网“万方数据(ChinaInfo)系统科技期刊群”。所以,向本刊投稿并录用的稿件文章, 将一律由编辑部统一纳入万方数据(ChinaInfo)系统,进行因特网提供信息服务。凡有不同 意者,请在来稿时声明,本刊将作适当处理。本刊所付稿酬包含刊物内容上网服务报酬,不 再另付。 《光谱实验室》编辑部     

双势垒超晶格结构的同步辐射及X射线双晶衍射研究

利用高精度的Ｘ射线双晶衍射和同步辐射散射对可用于半导体红外探测器的双势垒超晶格材料进行了研究，并运用Ｘ射线衍射动力学理论进行模拟计算，得到了与实验结果符合得很好的理论曲线．同时发现包络函数节点处的卫星峰对结构参数的变化极为灵敏．以此进行模拟计算，可准确地确定出样品的结构参数，厚度误差范围为±０.１ｎｍ．并利用Ｘ射线衍射运动学理论对实验中观测到的卫星峰调制现象给予了解释     

义务刊登闲置光谱仪器供求信息的通知

各单位都有一些闲置光谱仪器,而一些单位又需要这些仪器。因此,本刊决定：义务刊登这类信息。欲刊登者,请与本刊联络处联系,地址：北京市81信箱66分箱刘建林,邮编：100095,电话：(010)62452937。 《光谱实验室》编辑部     

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Four blue-violet light emitting InGaN/GaN multiple quantum well(MQW) structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.     

0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-y buffers

Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic(TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition(MOCVD).Compositionally undulating stepgraded InAsyP1-y buffer layers with a lattice mismatch of ～1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global(AM 1.5 G).     

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsiyity changes very little with the increase of reverse bias voltage. However, when the incident light illuminates the edge region of the electrode, the responsivity increases remarkably with the increase of reverse bias voltage, and the corresponding quantum efficiency could be even higher than 100%. It is proposed that the surface states near the edge of the electrode may lead to a reduction of effective Schottky barrier height and an enhancement of electron injection, resulting in the anomalous gain.     

Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more In atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.