第三讲 半导体的激子效应及其在光电子器件中的应用

人们对半导体中的电子空穴对在库仑互作用下形成的激子态及其有关的物理性质进行了深入研究 . 激子效应对半导体中的光吸收 、发光 、激射和光学非线性作用等物理过程具有重要影响,并在半导体光电子器件的研究和开发中得到了重要的应用 . 与半导体体材料相比, 在量子化的低维电子结构中,激子的束缚能要大得多,激子效应增强,而且在较高温度或在电场作用下更稳定 . 这对制作利用激子效应的光电子器件非常有利.近年来量子阱 、量子点等低维结构研究获得飞速的进展,已大大促进了激子效应在新型半导体光源和半导体非线性光电子器件领域     

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes

The influences of polarization and p-region doping concentration on the photocurrent response of Al0.4Ga0.6N/Al0.4Ga0.6N/Al0.65Ga0.35N p–i–n avalanche photodetector are studied in a wide range of reverse bias voltages.The simulation results indicate that the photocurrent under high inverse bias voltage decreases with the increase of polarization effect,but increases rapidly with the increase of effective doping concentration in p-type region.These phenomena are analyzed based on the calculations of the intensity and distribution of the electric field.A high p-region doping concentration in the p–i–n avalanche photodetector is shown to be important for the efficient compensation for the detrimental polarization-induced electrostatic field.     

高质量大面积石墨烯的化学气相沉积制备方法研究

石墨烯因其奇特的能带结构和优异的物理性能而成为近年来大家研究的热点, 但是目前单层石墨烯的质量与尺寸制约了其实际应用的发展. 本文采用常压化学气相沉积(CVD)方法, 基于铜箔衬底, 利用甲烷作为碳源制备了高质量大面积的单层与多层石墨烯. 研究发现: 高温度、稀薄的甲烷浓度、较短的生长时间以及合适的气体流速是制备高质量、大面积石墨烯的关键. Raman光谱, 扫描电子显微镜、透射电子显微镜等表征结果表明: 制备的石墨烯主要为单层, 仅铜箔晶界处有少量多层石墨烯. 电学测试表明CVD制备的石墨烯在低温时呈现出较明显的类半导体特性; 薄膜电阻随外界磁场的增大而减小.     

多个光伏空间亮孤子相互作用研究

用数值方法分析了多个平行传播一维光伏空间亮孤子之间的相干相互作用.结果表明，同相多个孤子相互作用时，它们不同于两个孤子时的周期性的融合和分开，而是会在整体吸引靠近过程中发生孤子的逐步融合作用.多个孤子相互之间发生能量耦合作用时，可简单归结为三种基本的相互作用模式.而邻近相互反相的多个孤子相互作用时，能保持很好的稳定传播特性，其对形成孤子阵列及阵列波导具有指导意义. 关键词： 光伏空间孤子 多个孤子 相互作用     

红外光谱微机数据库

PC-IR大型红外光谱微机数据库系统 ,包含了全套标准红外光谱集的 6万张光谱数据 ,是世界上最大的一种纯化合物红外光谱微机数据库。系统已通过省级鉴定。鉴定指出 :“其规模和性能已达到国际先进水平。”该成果先后获福建省医卫科技进步一等奖 ,福建省政府科技进步二等奖 ,卫生部优秀软件奖。按照未知样品的红外谱图 ,根据系统的屏幕提示 ,用户由键盘输入各主要吸收峰的波数和透过率值 ,即可进行自动检索。系统给出库中与样品光谱相同或最相近的若干种化合物的图谱序号 ,熔点状态 ,分子式及相似性得分。该系统可在 3 86,486,5 86等微机或 …     

Adsorption of endotoxins on Ca2+ iminodiacetic acid by metal ion affinity chromatography

Endotoxins (also known as lipopolysaccharides (LPS)) are undesirable by products of recombinant proteins, purified from Escherichia coli. LPS can be considered stable under a wide range of temperature and pH, making their removal one of the most difficult tasks in downstream processes during protein purification. The inherent toxicity of LPS makes their removal an important step for the application of these proteins in several biological assays and for a safe parenteral administration. Immobilized metal affinity chromatography (IMAC) enables the affinity interactions between the metal ions (immobilized on the support through the chelating compound) and the target molecules, thus enabling high efficiency separation of the target molecules from other components present in a mixture. Affinity chromatography is applied with Ca2+ iminodiacetic acid (IDA) to remove most of the LPS contaminants from the end product (more than 90%). In this study, the adsorption of LPS on an IDA-Ca2+was investigated. The adsorption Freundlich isotherm of LPS-IDA-Ca2+provides a theoretical basis for LPS removal. It was found that LPS is bound mainly by interactions between the phosphate group in LPS and Ca2+ligands on the beads. The factors such as pH (4.0 or 5.5) and ionic strength (1.0 mol/L) are essential to obtain effective removal of LPS for contaminant levels between endotoxin’ concentration values less than 100 EU/mL and 100000 EU/mL. This new protocol represents a substantial advantage in time, effort, and production costs.     

The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

InGaN/GaN p-i-n solar cells, each with an undoped In0.12Ga0.88N absorption layer, are grown on c-plane sapphire substrates by metal-organic chemical vapor deposition. The effects of the thickness and dislocation density of the absorp- tion layer on the collection efficiency of InGaN-based solar cells are analyzed, and the experimental results demonstrate that the thickness of the InGaN layer and the dislocation density significantly affect the performance. An optimized InGaN- based solar cell with a peak external quantum efficiency of 57% at a wavelength of 371 nm is reported. The full width at half maximum of the rocking curve of the （0002） InGaN layer is 180 arcsec.