排序方式: 共有38条查询结果,搜索用时 15 毫秒
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用X射线反射方法研究了分子束外延技术生长的Si中Ge薄层异质结构的Ge原子分布特性.根据X射线反射理论及Parratt数值计算方法对实验反射曲线的模拟,得到不同厚度的Ge薄层异质结构样品中Ge原子的深度分布为非对称指数形式:在靠近样品表面一侧的衰减长度为8埃,而在靠近样品衬底一侧的衰减长度为3埃,且分布形式与Ge原子层的厚度无关。讨论了不同结构参数(Ge原子薄层的深度、Ce原子分布范围、样品表面粗糙度、样品表面氧化层厚度等)对样品低角反射曲线的影响. 相似文献
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用X射线反射方法研究了分子束外延技术生长的Si中Ge薄层异质结构的Ge原子分布特性.根据X射线反射理论及Parratt数值计算方法对实验反射曲线的模拟,得到不同厚度的Ge薄层异质结构样品中Ge原子的深度分布为非对称指数形式:在靠近样品表面一侧的衰减长度为8埃,而在靠近样品衬底一侧的衰减长度为3埃,且分布形式与Ge原子层的厚度无关.讨论了不同结构参数(Ge原子薄层的深度、Ge原子分布范围、样品表面粗糙度、样品表面氧化层厚度等)对样品低角反射曲线的影响. 相似文献
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Microstructure of NiO-containing Co/Cu/Co spin valves (CCC-SV) annealed at room temperature for nearly four years has been studied by synchrotron radiation X-ray diffraction. With the annealing time expanding, the thickness of each sub-layer remains nearly unchanged while the interface roughness varies obviously compared with that of samples without annealing. The roughness at the interface of NiO/Co decreases with the annealing time increasing for both of the samples with NiO layer on the top (TSV) and under the bottom (BSV) of CCC-SV. On the other hand, the roughness at Co/Cu interface increases with the annealing time expanding for BSV while it decreases for TSV. These results indicate that the structure of TSV is more stable than that of BSV. 相似文献
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SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with/without buffer layers of DyScO3 and SrRuO3 using laser-MBE. X-ray diffraction methods, such as high resolution X-ray diffraction, grazing incident X-ray diffraction, and reciprocal space mapping are used to investigate the lattice structure, dislocation density, in-plane lattice strain distribution along film thickness. From the measurement results, the effects of substrate on film lattice quality and microstructure are discussed. 相似文献
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Cr-Doped InAs Self-Organized Diluted Magnetic Quantum Dots with Room-Temperature Ferromagnetism
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Cr-doped InAs self-organized diluted magnetic quantum dots (QDs) are grown by low-temperature molecularbeam epitaxy. Magnetic measurements reveal that the Curie temperature of all the InAs:Cr QDs layers with Cr/In flux ratio changing from 0.026 to 0.18 is beyond 400 K. High-resolution cross sectional transmission electron microscopy images indicate that InAs:Cr QDs are of the zincblende structure. Possible origins responsible for the high Curie temperature are discussed. 相似文献
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