紫外非线性光学晶体三硼酸铯的生长和性能

采用泡生法和提拉法生长出三硼酸铯(化学式CsB3O5,简称CBO)晶体,研究了晶体生长工艺条件及晶体生长形态.泡生法生长的CBO晶体的尺寸为40mm×25mm×25mm;生长过程中晶体转速为10～20r/min,降温速率为0.1～0.2℃/d.用提拉法生长出20mm×30mm的CBO晶体;生长过程中液面温度梯度为60℃/cm,提拉速度为8mm/d.在生长过程中Cs2O的挥发速度大于B2O3的挥发速度.CBO单晶的晶面由[011]斜方柱和[010]斜方柱单形组成,属于[011]单形是4个较大的面,属于[101]单形是4个较小的三角形晶面.CBO在紫外波段具有较大的有效非线性光学系数.利用CBO进行Nd∶YAG激光和频获得了高转换率的波长355nm及266nm相干光输出.     

掺质YAG晶体中的缺陷

本文报道了用化学腐蚀法对掺质浓度不同和掺质种类不同的YAG晶体样品进行的腐蚀,详细地观察了样品表面的腐蚀坑形貌,尤其是位错腐蚀坑的形貌和分布,测量了原生态和相应的退火样品上位错腐蚀坑的平均密度.在观测中发现,有些掺钕晶体样品上,位错腐蚀坑在中心区与边缘区的密集程度不同,有明显的分界.对此现象进行了探讨,认为出现在样品边缘区内的密集位错,除了来自于籽晶中以及来自于晶体从籽晶开始生长的起始处外,也由于熔体中出现在晶体周界处的自然对流与强迫对流边界层内的液流不稳,引起了生长界面边缘局部不稳而产生,环境气流起了相当的作用.     

大尺寸Nd3+:GGG激光晶体的单胞参数计算和组分分析

采用提拉法生长了直径为136mm的Nd3+:GGG单晶,通过X射线衍射和X射线荧光对晶体的结构、成分沿生长方向和径向的变化进行了测试分析.结果表明单胞晶格参数沿晶体的生长方向和径向均逐步变大,平均变化率分别为3.1×10-6(A)/ mm、1.3×10-5(A)/mm;沿着晶体的生长方向,Nd和Gd组分按指数函数规律逐步增加,而Ga组分则按高斯函数逐渐减小.沿晶体径向从内到外,Nd、Gd组分按线性规律逐渐增大,其变化率分别为0.0014 at;/ mm、0.00924 at;/ mm,Ga组分则按线性规律减小,变化率为-0.0117 at;/ mm.这些变化主要是由于Nd3+的分凝效应、Ga挥发所导致.     

中红外激光晶体Er∶YSGG的生长及LD泵浦的激光性能

采用提拉法成功生长出了Er∶ YSGG晶体.吸收光谱分析表明Er∶ YSGG晶体在967.5nm有较强的吸收峰和较宽的吸收谱带.采用966nm半导体激光器泵浦YSGG/Er∶YSGG复合激光晶体元件,实现了2.796 μm的连续激光输出,最大输出功率439 mW,相应的斜率效率为12.5;,光光转换效率为10.6;.     

Full-profile fitting of emission spectrum to determine transition intensity parameters of Yb~(3+):GdTaO_4

The Judd-Ofelt theoretic transition intensity parameters A_(tp)~k of luminescence of rare-earth ions in solids are important for the quantitative analysis of luminescence.It is very difficult to determine them with emission or absorption spectra for a long time.A "full profile fitting" method to obtain A_(tp)~k in solids with its emission spectrum is proposed,in which the contribution of a radiative transition to the emission spectrum is expressed as the product of transition probability,line profile function,instrument measurement constant and transition center frequency or wavelength,and the whole experimental emission spectrum is the sum of all transitions.In this way,the emission spectrum is expressed as a function with the independent variables intensity parameters A_(tp)~k,full width at half maximum(FWHM) of profile functions,instrument measurement constant,wavelength,and the Huang-Rhys factor S if the lattice vibronic peaks in the emission spectrum should be considered.The ratios of the experimental to the calculated energy lifetimes are incorporated into the fitting function to remove the arbitrariness during fitting A_(tp)~k and other parameters.Employing this method obviates measurement of the absolute emission spectrum intensity.It also eliminates dependence upon the number of emission transition peaks.Every experiment point in emission spectra,which usually have at least hundreds of data points,is the function with variables A_(tp)~k and other parameters,so it is usually viable to determine A_(tp)~k and other parameters using a large number of experimental values.We applied this method to determine twenty-five A_(tp)~k of Yb~(3+) in GdTaO_4.The calculated and experiment energy lifetimes,experimental and calculated emission spectrum are very consistent,indicating that it is viable to obtain the transition intensity parameters of rare-earth ions in solids by a full profile fitting to the ions' emission spectrum.The calculated emission cross sections of Yb~(3+):GdTaO_4 also indicate that the F-L formula gives larger values in the wavelength range with reabsorption.     

X射线衍射双峰的Voigt峰形函数拟合

给出了Voigt函数的一种计算方法,同时给出了一种用Voigt峰形函数拟合由Kα1、Kα2引起的晶体X射线双峰衍射谱的一种算法,此算法可同时对多个衍射双峰进行拟合和分峰,从而给出较准确的衍射峰宽度,用于计算晶体颗粒尺寸和应力等.用此算法计算了纳米GSGG的颗粒度,结果表明:在低角度,双峰叠加对衍射峰的半高全宽的影响可忽略,而在高角度双峰的衍射间隔加宽,使计算获得的粒度明显偏小.     

BSO晶体生长固/液边界层结构的实时观测研究

实时测量BSO晶体水平区熔法生长过程中,研究固/液边界层以及边界层两侧的晶体和熔体的显微拉曼光谱,晶体生长固/液边界层以及边界层两侧的熔体和晶体的结构特征, 生长基元结构从熔体结构经边界层过渡到晶体结构的变化过程。结果显示, BSO熔体中存在Bi₃O₄和[SiO₄]的键合结构; Bi₃O₄分子基团在固/液边界层聚合形成[BiO₇]八面体单体、多聚体,与[SiO₄]结构基团联结,在通过固／液边界层时进入格位。     

铌酸锂晶体高温拉曼光谱研究

采用高温拉曼光谱法,对铌酸锂晶体高温下的结构特征进行了研究.结果显示,室温下较强的拉曼振动模式主要是由[NbO6]八面体的振动所引起的;随着温度升高,频率减小,谱峰位置向低波数方向移动,可观测到的谱峰数目减少.这主要是由晶体内模所对应的Nb-O键合强度随着温度升高而减弱引起的.     

大尺寸无机闪烁晶体Ce^3＋：YAG的生长和光谱研究

本文研究了大尺寸、高光学质量无机闪烁晶体Ce^3 :YAG的生长,并对它的吸收光谱和荧光光谱进行了测量和分析。在克服了晶体易列裂和出现宏观缺陷的情况下,采用提拉法成功生长出直径达45mm的Ce^3 ：YAG单晶。光谱测量表明晶体具有优良的光学性能。并已经在大规模集成电路的检测上得到应用。