小型化望远式激光共焦扫描显微内窥镜

研制了一种激光共焦扫描显微内窥镜,采用望远式显微内窥光学系统,同时实现长距离的图像中继传输、远心f-theta光学扫描和显微内窥成像功能.二维共焦扫描由双振镜实现,低噪音扫描控制信号由嵌入式系统产生.为实现便携式应用,激光共焦扫描显微内窥镜采用小型化设计方案.首先,体内的显微内窥成像光学系统,外径尺寸为8 mm,工作长度为250.3 mm,可通过标准腹腔镜手术孔进行体内显微内窥成像;其次,采用3 mm通光孔径的小尺寸平面反射镜实现体外共焦扫描,摆动频率为100 Hz,实现快速共焦扫描;最后,激光控制和荧光探测仅通过电缆和光纤与共焦扫描显微内窥镜前端连接,减小了显微内窥镜的前端尺寸和重量.通过实验验证,本系统的成像视场为φ 600 μm,光学分辨率为2.2 μm,可采用手持式或者其他方式工作,进行体内组织的共焦扫描成像,实现微创、在体的荧光显微内窥术.     

复迭代映射z_(n 1)= c的 广义Mandelbrot集研究

研究了复迭代映射ｚ（ｎ＋１）＝／ｚｎｍ＋ｃ的广义Ｍａｎｄｅｌｂｒｏｔ集,指出其关于实轴是对称的,并且具有ｍ＋１次的旋转对称性,得出周期轨道的稳定性条件及一周期轨道的稳定区域的边界方程．利用逃逸时间算法和周期点查找的算法构造Ｍａｎｄｅｌｂｒｏｔ集,可以更清楚地了解Ｍａｎｄｅｌｂｒｏｔ集的结构．     

水体细菌微生物种类快速鉴别方法研究

紫外可见多波长透射光谱包含了细菌微生物对光的吸收和前向散射等信息,能反映细菌细胞的组分、大小以及形态等特征,具有细菌种属的特异性,可应用于细菌微生物的快速种类鉴别。以水体中常见细菌微生物为研究对象,实验测量了大肠埃希氏菌、金黄色葡萄球菌、鼠伤寒沙门氏菌以及肺炎克雷伯菌的紫外可见多波长透射光谱,简要分析了不同种类细菌微生物的多波长透射光谱特征;研究了透射光谱与支持向量机多向量分析方法相结合的水体细菌微生物快速识别方法,利用基于网格搜索法的训练集内部交叉验证获取建模所需最佳惩罚因子C和核函数参数g,根据最优参数和LibSVM一对一多分类法建立细菌快速分类鉴别模型。利用不同株实验细菌的透射光谱作为测试集对所建模型进行识别正确率的验证,结果表明,所建立的快速分类鉴别模型可以对选取的大肠埃希氏菌、金黄色葡萄球菌、鼠伤寒沙门氏菌以及肺炎克雷伯菌进行快速种类识别,识别正确率为100%;分类鉴别模型对不同大肠杆菌亚种的测试集识别正确率为100%,证明该模型对细菌属间鉴别具有较好的稳定性。不仅可为饮用水源细菌微生物的快速识别预警提供方法,而且可在生物医学方面作为细菌微生物鉴别的一种简便、快速、准确的手段。     

探究性教学情景下的大学物理课堂评估策略

为了评估大学物理探究性教学情景下的学生综合素质,本文作者研究课堂评估法在探究性课题教学过程中各阶段的实施策略,并进行相应教学实验,得出针对大学物理探究性教学情景下的课堂评估实施原则、方式、标准.实践表明课堂评估法与探究性教学实现了有机融合,促进了学生综合素质的提高,是一种行之有效的评估学生综合素质的教学评价方法.     

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that, under the same breakdown voltage (BV) condition, allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers. Reducing their numbers helps in fast-switching. Furthermore, the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel. The simulation results show that the BV of the proposed LIGBT is increased by 113% compared with the conventional SOI LIGBT of the same length L_D. Contrastingly, the length of the drift region of the proposed device (11.2 μ) is about one third that of a traditional device (33 μ) with the same BV of 141 V. Therefore, the turn-off loss (E_OFF) of the CDBL SOI LIGBT is decreased by 88.7% compared with a conventional SOI LIGBT when the forward voltage drop (V_F) is 1.64 V. Moreover, the short-circuit failure time of the proposed device is 45% longer than that of the conventional SOI LIGBT. Therefor, the proposed CDBL SOI LIGBT exhibits a better V_F-E_OFF tradeoff and an improved short-circuit robustness.     

CPA方程计算醇+卤代烃体系气液相平衡

醇+卤代烃混合体系,尤其是乙醇、三氟乙醇(TFE)等与卤代烃的混合工质在吸收式制冷、热泵、蒸气动力循环等领域中有着重要的应用.CPA方程可以描述缔合流体的性质,用于含醇类组元的混合体系气液相平衡性质描述.本文首先从纯物质饱和性质实验数据回归得到了CPA方程参数;将CPA方程应用于醇+卤代烃混合体系的气液相平衡计算,采用并比较了2种缔合方案;比较了CPA方程与G~E-EoS模型的相平衡计算效果.CPA状态方程在揭示分子间相互作用的基础上可准确描述醇+卤代烃混合体系的气液相平衡性质.     

Modulational instability of ion—acoustic waves in a warm plasma

Using the standard reductive perturbation technique,a nonlinear Schroedinger equation is derived to study the modulational instability of finite-amplitude ion-acoustic waves in a non-magnetized warm plasma.It is found that the inclusion of ion temperature in the equation modifies the nature of the ion-acoustic wave stability and the soliton stuctures.The effects of ion plasma temperature on the modulational stability and ion-acoustic wave properties are inestigated in detail.     

∣x∣在调整的第二类Chebyshev结点组的有理插值

本文研究了Newman型有理算子逼近|x|的收敛速度,插值结点组X取调整的第二类Chebyshev结点组.利用上界估计得到确切的逼近阶为O 1n2.这个结果优于结点组取作第一、二类Chebyshev结点组、等距结点组和正切结点组.     

宽视场高分辨率闭路监控系统监控镜头设计

为了满足新形势下闭路监控系统（CCTV）对拍摄视场和高清分辨率的要求,设计了一款复杂化的反摄远型全球面结构的CCTV镜头。该镜头的全视场为80,F#为3,焦距为5 mm,光谱范围为486 nm~656 nm。采用像元尺寸为7.5 m7.5 m,1.27 cm(1/2英寸)的CCD成像。该镜头在奈奎斯特频率67 lp/mm处,全视场MTF接近0.65;在1/2奈奎斯特频率处调制传递函数（MTF）大于0.85;在220 lp/mm处,全视场MTF大于0.3,已经接近衍射极限。镜头像面波前PV值为0.077 9,RMS为0.015 9,达到了瑞利判据的要求。设计评价结果表明,该镜头像差校正满足CCTV监控镜头的成像质量要求。     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.