国产润滑油的压粘系数和固化压力

润滑油的压粘系数和固化压力是弹流理论应用于摩擦学工程设计的关键试验数据。本文报道了20种国产润滑油的压粘系数和其中16种润滑油的最小固化压力的测定结果,并对不同油田的基础润滑油、不同化学结构的合成润滑油和不同用途的工业润滑油的压粘系数和固化压力进行了分析比较。     

紧黎曼面上一类线丛截面空间的基

对于亏格g≥1的紧Riemann曲面M,本文运用Riemann-Roch定理,证明了其上线丛Lλ(M)的某类截面空间非空集,并利用Theta函数和素形式构造出这类截面空间的一组基．     

区间型多属性群体专家权重的确定方法

针对方案偏好和属性值均为区间数的多属性群决策问题,研究了群体专家权重的确定,并提出了一种新的群决策方法．通过定义区间数向量的内积,计算专家评判的相似度和差异度,进而客观地确定了专家的权重．求解最小化主、客观偏差的目标规划模型,得到了属性的权重,利用方案的群体综合属性值给出排序结果．供应商选择的应用实例验证了方法的可行性和合理性．     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.     

Chaos in fractional-order generalized Lorenz system and its synchronization circuit simulation

The chaotic behaviours of a fractional-order generalized Lorenz system and its synchronization are studied in this paper. A new electronic circuit unit to realize fractional-order operator is proposed. According to the circuit unit, an electronic circuit is designed to realize a 3.8-order generalized Lorenz chaotic system. Furthermore, synchronization between two fractional-order systems is achieved by utilizing a single-variable feedback method. Circuit experiment simulation results verify the effectiveness of the proposed scheme.     

Calculation of the reactor neutron time of flight spectrum by convolution technique

It is a very complex and time-consuming process to simulate the nuclear reactor neutron spectrum from the reactor core to the export channel by applying a Monte Carlo program. This paper presents a new method to calculate the neutron spectrum by using the convolution technique which considers the channel transportation as a linear system and the transportation scattering as the response function. It also applies Monte Carlo Neutron and Photon Transport Code （MCNP） to simulate the response function numerically. With the application of convolution technique to calculate the spectrum distribution from the core to the channel, the process is then much more convenient only with the simple numerical integral numeration. This saves computer time and reduces some trouble in re-writing of the MCNP program.     

新型反对称涡气膜冷却结构设计及其数值研究

针对中.高吹风比下容易产生反向涡对的问题,为了改善中、高吹风比下气膜孔的冷却效率,进行了新型抗涡气膜孔的设计和研发工作.根据造型参数不同,设计了四种新型反对称涡气膜孔结构,首先研究了不同几何结构的新型气膜冷却孔对平板气膜冷却特性的影响.然后将反对称涡新型气膜冷却结构运用于叶栅端壁,前缘冷却孔排采用了不同冷却结构的单,双...     

功能化离子液体中两步高效合成N-取代硫脲

两步高效合成N-取代硫脲：（1）在[emim]SCN中以酰与伯胺为起始原料先合成得到N-烃基-N＇-酰基硫脲,反应速度快,产率高,功能化离子液体既作为第一步反应原料,又作为反应介质;（2）N-烃基-N′-酰基硫脲在NaOH/H2O/EtOH体系中以近100%的转化率水解得目标产物.提供了一种高效合成N-取代硫脲的绿色、...     

基础知识教育与创新意识的培养——实施《理工科非物理类专业大学物理课程教学基本要求》体会之二

在培养学生创新意识的同时,更应重视对学生基础知识的教育,任何一个创造性观点或理论的产生都建立在长期大量的知识积累的基础上.     

碳纳米管的稳定性研究

石墨晶体结构遭到破坏时，总是碎化为微小尺寸的片状粉末.孤立的石墨烯片在其边缘存在大量的悬挂键，使得石墨烯片的能量较高，状态也不稳定.石墨烯片卷曲形成碳纳米管后，悬挂键减少，系统能量相应降低.另一方面，石墨烯片卷曲形成碳纳米管将产生相应的形变势能，形变势能的产生将抵消由于减少石墨烯片边缘上的悬挂键所带来的能量降低，使碳纳米管的能量可能高于石墨烯片的能量，导致碳纳米管结构的不稳定.在建立碳纳米管生成的力学模型并进行深入理论分析的基础上得出了碳纳米管可以稳定存在的最小直径约为0.32nm的结论.