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Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide 下载免费PDF全文
The upper waveguide(UWG) has direct influences on the optical and electrical characteristics of the violet laser diode(LD) by changing the optical field distribution or barrier of the electron blocking layer(EBL). In this study, a series of In GaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power(OLP) under an injecting current of 120 mA or the threshold current(Ith) is deteriorated when the UWG is u-In_(0.02)Ga_(0.98)N/GaN or u-In_(0.02)Ga_(0.98)N/Al_xGa_(1-x)N(0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor(OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In_(0.02)Ga_(0.98)N/GaN/Al_(0.05)Ga_(0.95)N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally,the output light power under an injecting current of 120 mA is improved to 176.4 mW. 相似文献
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DMSO是一种强极性非质子溶剂,它能使纤维素强烈膨润,可减弱纤维素分子链之间的氢键作用,因此,已被用作纤维素的溶剂。将DMSO引入到天然纤维苧麻中去,以改变苧麻纤维的超分子结构,达到既保持苧麻纤维的原有优点,又能改善其不良性能的目的。研究了不同的DMSO—NaOH组成对苧麻纤维的处理,采用X-衍射仪、电子显微镜、红外光谱仪及化学分析方法测试分析纤维的形态、结构变化和机械性能的变化。研究结果表明,伸长度从5—7%提高到15—30%;密度由1.5330下降到1.50—1.48;水保留值由36.62%提高到50—58%;结晶度由92%下降到84%左右;取向度由91%下降到80—83%;纤维素Ⅰ的特征峰转变为纤维素Ⅱ的特征峰;微纤维的平行结构变成网状结构;纤维的空腔增大。由于发生上述变化,苧麻纤维性能有较大的提高,尤其对耐疲劳性能有大幅度的提高。 相似文献
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Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes 下载免费PDF全文
Performances of blue and green laser diodes(LDs) with different u-InGaN upper waveguides(UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency(SE) of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In_(0.05) Ga_(0.95)N lower waveguide(LWG) is designed to reduce the optical loss, and its slope efficiency is improved significantly. 相似文献
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High-Pressure Water-Vapor Annealing for Enhancement of a-Si:H Film Passivation of Silicon Surface 下载免费PDF全文
We investigate the effect of amorphous hydrogenated silicon (a-Si:H) films passivated on silicon surfaces based on high-pressure water-vapor annealing (HWA). The effective carrier lifetime of samples reaches the maximum value after 210℃, 90min HWA. Capacitance-voltage measurement reveals that the HWA not only greatly reduces the density of interface states (Dit), but also decreases the fixed charges (Qfixed) mainly caused by bulk defects. The change of hydrogen and oxygen in the film is measured by a spectroscopic elHpsometer and a Fourier-transform infrared (FTIR) spectrometer. All these results show that HWA is a useful method to improve the passivation effect of a-Si:H films deposited on silicon surfaces. 相似文献