Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

Dielectric Properties of Multilayered Ba0.5Sr0.5TiO3 Thin Films Deposited on ITO-Coated Corning 1737 Glass by rf Magnetron Sputtering

A new stacking method via variation ofsubstrate temperature in rfmagnetron sputter is used to fabricate polycrystalline/polycrystalline Ba0.5Sr0.5TiO3 thin films with higher dielectric constant, higher breakdown strength and lower leakage current densities than those prepared by a conventionM deposition method. The improved figure of merit G （ε0εrEb） of the Ba0.5Sr0.5TiO3 thin films implies that they are a feasible insulation layer for thin film electroluminescent devices.     

Theoretical analysis of nanosecond crystallization kinetics of phase-change optical recording films

A theoretical investigation of nanosecond crystallization kinetics of the phase-change optical recording films is presented. An extended Kissinger equation for the square-root heating is derived, which properly describes the temperature evolution of the films by nanosecond laser heating. The extended Kissinger equation was used to explain our previous experimental results.     

17C反应截面测量及有限力程Glauber模型分析

用透射法测量了能量为79AMeV的¹⁷C在¹²C反应靶上的反应截面;利用有限力程Glauber模型对¹⁷C的密度分布进行了分析.由高能区(965AMeV)相互作用截面数据分析认为¹⁷C具有谐振子密度分布,但拟合本实验结果及高能区实验数据发现,¹⁷C的中子密度分布中存在一个尾巴;假设¹⁷C密度为芯核加单粒子密度分布形式,分析认为¹⁷C的价中子主要处于1d5/2?轨道.     

原子的共振激发—速率方程与半经典理论的比较

本文由半经典理论推得了原子电离率随脉冲空间传输出现周期性起伏这一新的相干作用结果,这点与速率方程的预计相差甚远.文中定量说明了利用速率方程对同位素分离过程进行分析时产生的系统误差,为实验分析工作提供了依据.     

椭圆波导的截止波长和衰减常数的理论计算

 根据椭圆波导中电磁波的传播理论,研究并计算了任何椭圆偏心度的一系列波模的截止波长和功率衰减常数,相应地解决了椭圆波导理论中的马丢函数的精确计算问题。计算结果令人满意,并且极大地扩大了各种波模对椭圆偏心率的适用范围（1%～99%）。     

200GeV/u的~(238)U+~(238)U核碰撞产生的双轻子谱(M≤4GeV/c~2)的计算

在夸克味动力学的计算中,除包含ｕ、ｄ、ｓ夸克及其反夸克外,还涉及粲夸克及其反夸克（ｃｃ）,采用包含夸克味动力学效应的相对论性流体力学模型,计算了碰撞能量为２００ＧｅＶ／ｕ的２３８Ｕ＋２３８Ｕ核碰撞时形成的膨胀ＱＧＰ及其在相变过程中发射的双轻子谱,轻子对的质量范围Ｍ≤４ＧｅＶ／ｃ２．计算结果与ＣＥＲＮＳＰＳ的实验测量数据进行了定性的比较和分析,得到初步的结论：由于夸克碎块和味动力学效应,Ｊ／ψ→μ＋＋μ－峰值被降低,导致低质量区（阈至１．３５ＧｅＶ／ｃ２）谱的提高．     

相位锁定循环投影技术及其应用

由一组规则栅线投影到物体表面的变形光栅,采用相位锁定循环解调算法解调出含有物体表面高度信息的相位.该技术的最大优势是不需传统的相位去包裹.利用该算法对二维栅线图扫描确定的相位.本文给出了一个典型试件的实验结果和分析.     

InCI分子C^1Ⅱ1态光谱研究

采用激光诱导荧光技术对ＩｎＣ１分子Ｃ＾１Ⅱ１→Ｘ＾１∑＾＋荧光光谱进行了分析和归属,在发射谱中探测到ｖ′＝１向下的跃迁,证明Ｃ态预离解只能发生在ｖ′＝１之上。并对Ｃ＾１Ⅱ１→Ｘ＾１∑＾＋的荧光衰变曲线进行了观测,得到ＩｎＣ１分子Ｃ＾１Ⅱ１（ｖ′＝１）态的无碰撞辐射寿命τ０≈１１ｎｓ及电子跃迁矩│Ｒｅ│＾２≈５．９５Ｄ＾２。