ICF研究中的Rayleigh-Taylor不稳定性实验用靶

 概述了当前研究Rayleigh-Taylor不稳定性增长实验所用的靶型情况。从实验用靶来看，调制靶的设计正从平面向立体发展，出现了球形和柱形等新靶形，制备手段包括精密机械微加工、激光束、电子束和离子束加工、半导体工艺和微米纳米技术加工等。根据对国外新靶型的研究，结合国内工艺条件和实验需求，对国内可能采用的靶型进行了研究探索。     

光双二进制传输系统的性能研究

光双二进制信号的谱宽是传统二进制信号的一半,采用双二进制传输比二进制传输色散限制的中继距离可增加一倍.本文对采用传统光接收机的光双二进制传输系统用MATLAB进行了通信仿真.结果表明:在完全消光条件下,10 Gb/s双二进制信号在常规单模光纤上传输可达160 km,40 Gb/s双二进制信号在非零色散光纤上为30 km,均比二进制增加了一倍;详细考察了消光比对传输的影响,只有消光比大于25 dB时,双二进制相对于二进制传输的优越性才呈现出来.     

Effects of Dual-Electrode Biasing on Er in a Toroidal Plasma

Two externally biased electrodes were inserted into the plasma on the KT-5C tokamak to test the effects on modifying the radial electric field Er, other than single biasing. Using various combinations of biasing voltage,the influences of double biasing are compared with the single biasing. It turns out that the effect of dual-biasing is also effective as a single one, but the outer electrode seems to be shielded by the inner one and show less influence. The results clearly show that the radial electric field Er changed by external biasing is intrinsically an effect localized at the edge of the plasma, which is caused by the electrode induced radial current; and dualelectrode biasing using the method similar to the single biasing seems not to be able to increase more distinctly the peaking effect on Er than the single biasing.     

扩张代数的recollement

A是任意域k上的有限维代数. 证明了: 若无界导出模范畴D^-(Mod-A) 允许有关于有限维k-代数B和C的无界导出模范畴 D^-(Mod-B) 和D^-(Mod-C) 的对称的recollement 则A的平凡扩张代数T(A)的无界导出模范畴 也允许有如下对称的recollement:     

Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.     

均匀分层介质中标准矢量波函数的构成

研究了在均匀分层介质中构成标准矢量波函数的必要条件。研究结果表明在均匀分层介质中构成标准矢量波函数一般需遵循Morse-Feshbach判据外，领示矢量只能选取与折射率变化方向一致的那根坐标轴单位矢量。但在某些特定的条件下，对领示矢量的选取条件可以放宽为只需遵循Morse-Feshbach判据即可。     

劳动力供给带弹性的Solow模型

本文给出了在劳动力供给带弹性条件下的Ｓｏ１ｏｗ增长模型，给出了经济增长的黄金律和均衡处资本稳定性的证明，并且与不带弹性的Ｓｏｌｏｗ模型作了比较．     

等径管道的三维重建

由轮廓线重建物体的现有方法，不能准确地恢复原有管道的形状．本文提出了一种等径管道的三维重建方法，能较为准确地恢复原管道的三维结构．     

光致折射效应中空间电荷场建立过程的研究

本文推导了包含自衍射及非线性吸收影响、用以描述空间电荷场建立过程的微分方程组,阐明了周期性的空间电荷场与光强干涉条纹之间的相位差在建立过程中所起的作用,并推导了描述条纹倾斜和弯曲的微分方程。通过数值计算找到了硅酸铋(BSO)晶体中能量转移的规律,讨论了材料特性对过程快慢的影响,提出了用CW激光来探讨瞬态过程快慢的可能性。     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.