葫芦脲的研究进展

近几年葫芦脲和其衍生物由于其特殊的结构与性质已引起的密切关注。本文综述了葫芦脲的最新研究进展,包括葫芦脲分子及其衍生物的分子设计与合成,与聚电解质形成主链（准）聚轮烷和侧链（准）聚轮烷,与其他有机客体小分子相互作用形成轮烷和准轮烷,以及葫芦脲分子及其衍生物在囊泡、二维聚合物、色谱固定相、生物体以及药物缓释方面的最新应用。     

ZnO晶体Al杂质与Zn间隙共存的复合缺陷研究

利用第一性原理,研究了ZnO晶体Al杂质与Zn间隙共存的复合缺陷(AlZnZni)电子结构和光学性质.计算结果显示,AlZnZni复合缺陷的形成能为-3.180 eV,较低的形成能表明这种缺陷容易形成;复合缺陷使ZnO晶体的能带整体下移,带隙减小,价带区域展宽;电子能带结构的变化对ZnO的光学性质在低能产生了重要影响,主要表现在:介电函数虚部往低能方向移动且强度显著增强,使得ZnO表现出简并半导体的特性;复合缺陷导致ZnO晶体光学吸收边缘产生了红移,可见光区的吸收系数增大,透过率降低.     

硒化镉单晶体的研究进展

总结了CdSe单晶体的多种生长方法,包括温度梯度熔体法,移动区熔法,助熔剂法和气相提拉法等,其中气相提拉法能有效提高CdSe单晶体的晶体纯度及光学质量.介绍了CdSe晶体用于红外非线性光学器件以及室温核辐射探测器件的研究进展,并对CdSe晶体制作中红外偏振测量用波片进行了展望.     

Fe-N共掺杂的碳纳米管串联空心球对氧还原反应的电催化

以ZIF-8为模板,通过表面包覆聚多巴胺、同时刻蚀ZIF-8中的Zn²⁺,形成空心球,在与三氯化铁络合后,经高温碳化和氨气热处理,得到了高比表面积的Fe-N共掺杂的碳纳米管串联的碳纳米空心球催化剂. 氨气不仅刻蚀碳基底提高比表面积,还可还原铁元素形成Fe₄N纳米粒子,提升了催化剂对氧还原反应的电催化活性,其氧还原半波电位达0.79 V,仅比商业Pt/C低60 mV,而且其稳定性和耐甲醇性更优于商业Pt/C,展示出良好的燃料电池应用潜力.     

丙酮酸钠/氯化铵混合气溶胶的吸湿性和反应性

采用ATR-FTIR光谱法研究了不同OIRs(有机物与无机物的摩尔比)的丙酮酸钠/氯化铵混合气溶胶的吸湿性和反应性。结果表明,丙酮酸钠和氯化铵反应生成氯化钠、丙酮酸和氨气。当OIR=1∶2时,两次降湿过程的风化点分别为56.6%±2.5%和68.6%±2.5%,两次升湿过程的潮解点分别78.2%±2.5%和82.0%±2.5%。当OIR=2∶1时,两次降湿过程的风化点分别为58.4%±2.5%和62.5%±2.5%,由于第一次降湿过程反应完全,两次升湿过程的潮解点均为80.2%±2.5%。     

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Four blue-violet light emitting InGaN/GaN multiple quantum well(MQW) structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.     

Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III-V compound solar cell

The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conventional bus-bar metal electrode in III-V compound GaInP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N⁺-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N⁺-GaAs layer, up to 2×10¹⁹ cm^-3. A good device performance of the GaInP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.     

水基流延制备Li1.075Nb0.625Ti0.45O3微波介质陶瓷基片

以聚乙烯醇水溶液为粘结剂,乙二醇为增塑剂,聚羧酸铵盐为分散剂,通过水基流延工艺制备了Li1.075Nb0.625Ti0.45O3(LNT)微波介质陶瓷基片.对Li1.075Nb0.625 Ti0.45O3微波介质陶瓷水基流延浆料流变特性的研究表明,当分散剂用量为0.6 wt;.粘结剂用量为5 wt;,增塑剂用量为10 wt;时,流延浆料分散稳定性良好,呈现典型的剪切变稀型流体特性,满足流延成型工艺的要求.采用该配方制备的Li1.075Nb0.625Ti0.45O3水基流延基片力学性能良好,基片的微观结构均匀.     

Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more In atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.     

空气“自呼吸”式直接甲醇燃料电池阴极微孔扩散层的优化

直接甲醇燃料电池;空气“自呼吸”;阴极微孔层;阴极水管理;膜电极集合体