基于DNA酶/AuNPs-GO传感器方波伏安法高灵敏检测Pb2+

制备了金纳米粒子-氧化石墨烯(AuNPs-GO)复合物,采用透射电镜(TEM)和紫外-可见吸收光谱(UV-Vis)对其进行了表征.将此复合物修饰到玻碳电极(GCE)表面,再通过Au—S键将巯基修饰的富含鸟嘌呤的DNA链(T30695)自组装到电极表面的金纳米粒子上.T30695可与Pb2+结合形成稳定的平行G-四链体,...     

光学虚拟实验系统研究

采用MATLAB技术,结合光学实验教学内容的特点,利用面向对象的方法开发构建了光学虚拟实验系统。该系统具有操作简单、界面直观、实验快速实施等特点。以空间滤波实验和偏振光实验为例,给出了设计思想和相应的仿真实现结果。学生通过对实验系统的操作,可以很快地掌握实验原理、内容和实验特点。该系统作为传统光学实验教学的补充,能够完成一般光学实验中难以实现的实验操作,使复杂的实验操作变得直观生动,提高了光学实验教学的效果,同时也为相关实验系统的设计研发提供了一条新的途径。     

压缩相干态光场与Λ型三能级原子相互作用的纠缠特性

利用量子熵理论,研究了压缩相干态光场与Λ型三能级原子的量子纠缠随时间的演化特性.结果表明:光场与原子纠缠度依赖于初态原子能级叠加系数、光场压缩参量、相干态振幅参量及失谐量与耦合系数之比.当光场压缩参量增大时,光场与原子的最大纠缠度增大;若场失谐量与耦合系数之比增大,光场与原子纠缠则呈现周期性演化,系统呈现接近退纠缠;若场失谐量与耦合系数之比增大,光场与原子纠缠呈现周期性,场失谐量与耦合系数的比值足够大时,在一定时刻系统可处于稳定的最大纠缠态,且系统演化呈现周期性.     

P型非晶硅薄膜制备及其在HIT太阳电池中应用

采用RF-PECVD沉积技术制备P型非晶硅薄膜材料,研究硼烷浓度和加热温度对薄膜性能的影响.通过对两者优化,制备出了宽光学带隙、高电导率和致密性较好的P型非晶硅材料.作为窗口层应用到HIT太阳电池中,对其厚度进行优化,在N型单晶硅衬底上制备出了效率为14.28;的HIT太阳电池.     

Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Since defects such as traps and oxygen vacancies exist in dielectrics, it is difficult to fabricate a high-performance MoS$_{2}$ field-effect transistor (FET) using atomic layer deposition (ALD) Al$_{2}$O$_{3}$ as the gate dielectric layer. In this paper, NH$_{3}$ in situ doping, a process treatment approach during ALD growth of Al$_{2}$O$_{3}$, is used to decrease these defects for better device characteristics. MoS$_{2}$ FET has been well fabricated with this technique and the effect of different NH$_{3}$ in situ doping sequences in the growth cycle has been investigated in detail. Compared with counterparts, those devices with NH$_{3}$ in situ doping demonstrate obvious performance enhancements: $I_{\rm on}/I_{\rm off}$ is improved by one order of magnitude, from $1.33\times 10^{5}$ to $3.56\times 10^{6}$, the threshold voltage shifts from $-0.74 $ V to $-0.12$ V and a small subthreshold swing of 105 mV/dec is achieved. The improved MoS$_{2}$ FET performance is attributed to nitrogen doping by the introduction of NH$_{3}$ during the Al$_{2}$O$_{3}$ ALD growth process, which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al$_{2}$O$_{3}$ layer. Furthermore, the MoS$_{2}$ FET processed by in situ NH$_{3}$ doping after the Al and O precursor filling cycles demonstrates the best performance; this may be because the final NH$_{3}$ doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS$_{2}$ channel. The reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS$_{2 }$ devices.     

4-氨基-1,8-萘二酰亚胺的结构及光谱性质的理论研究

采用HF和密度泛函理论中的B3LYP和PBE0方法,在7个不同的基组下优化得到了4-氨基-1,8-萘二酰亚胺(ANI)的基态几何构型,用CIS/6-31+G(d)方法得到第一激发态几何构型,频率分析无虚频.在此基础上运用HF-CIS,TD-B3LYP和TD-PBE0方法研究了在气相及DMSO,DMF,MeCN,THF,CHCl3和EtOH溶剂中ANI的前线轨道及电子光谱.结果表明,HOMO→LUMO的跃迁是π→π*跃迁.随溶剂极性的增加,其最大吸收和荧光波长红移.用TD-B3LYP/6-31+G(d)方法得到的溶剂中ANI的吸收光谱计算值与实验值吻合性较好,但荧光光谱计算值与实验值有较大差异.进一步经线性拟合校正,ANI在非质子溶剂中的计算值与实验值能较好地吻合.计算显示激发态ANI具有较大的偶极矩,与解释相关荧光分子探针的光诱导电子转移方向选择性现象的光生电场理论一致.     

优良抽样设计下Logistic分布中参数的极大似然估计

当研究目标的实际测量具有不可修复的破坏性或耗资巨大时,有效的抽样设计将是一项重要的研究课题.在统计推断方面,排序集抽样(RSS)被视为一种比简单随机抽样(SRS)更为有效的收集数据的方式.动态极值RSS (MERSS)是一种修正的RSS.文章在SRS和MERSS下研究了Logistic分布中参数的极大似然估计(MLEs).在这两种抽样下证明了该分布中位置参数和刻度参数的MLEs的存在性和唯一性,并计算了所含参数的Fisher信息量和Fisher信息矩阵.比较了这两种抽样下对应估计的渐近效率.数值结果表明MERSS下的MLEs一致优于SRS下的MLEs.     

西维因在甲醇-水二元混合溶剂中的三维荧光光谱特性研究

农药的广泛使用对环境产生了重要的影响,西维因作为一种重要的广谱高效杀虫剂在很多地表水中残留,了解和掌握西维因在环境中的光谱特性及检测方法具有重要意义。研究了西维因的激发-发射三维荧光光谱特性,通过改变甲醇-水二元混合溶剂中甲醇的体积比,探讨了不同体积比的甲醇-水混合溶剂对西维因三维荧光光谱的影响。研究结果表明,西维因的特征荧光光谱峰为单峰,西维因的激发波长和发射波长范围分别处于： 244~304和300~350 nm,最大激发/发射峰位置分别位于280和335 nm。随着甲醇-水二元混合溶剂中甲醇含量的增加,西维因的三维荧光光谱未出现明显位移,但是荧光光谱强度随甲醇含量的增加出现了非线性的变化,这主要与二元混合溶剂自身独特的性质有关。     

Scalable Talbot effect of periodic array objects

A type of scalable self-imaging capable of variable magnification or minification of periodic objects is demonstrated in the focal plane of a lens illuminated by a point source.The theory and the experimental results show that the self-imaging phenomenon can also be realized in the focal plane of a lens regardless of whether the distances satisfy the lens formula or not.The particular property of this scalable self-imaging effect is that the images in the focal plane can be controlled with different scaling factors only when the distances between the point source and the periodic object satisfy a certain condition.This discovery should open a new field of diffraction imaging and new application opportunities in precision measurement.     

Thermal Behaviour for InGaAsP／InP Multi-Quantum-Well Superluminescent Diodes

Using a two-dimensional thermal flow model, we calculate the thermal resistance and the temperature distribution of InGaAsP/InP multi-quantum-well superluminescent diodes. The influence of lateral chip size and composition are evaluated. The results reveal that when the injection power reaches 1 W, temperatures in the active region rises up to almost 5OK. The width and length of the chip also have strong influence on the thermal resistance that can reach two orders of magnitude. The thermal resistance will change from 290 K/W to 68 K/W when the chip width increases from 500μm to 2500μm, and a similar result exists for the length. There is small effect on thermal resistance for active width. In view of the characteristics of output power versus the input current under pulsed and continues currents, the fitted experimental thermal resistance matches well with the measured results.