基于光注入Fabry-Perot半导体激光器实现同步全光分路时钟提取与波长转换

提出了一种利用Fabry-Perot（FP）半导体激光器同步提取波长转换的分路光时钟的新方法,并对该方法进行了数值模拟和实验验证.光注入半导体激光器会产生非线性单周期振荡特性,利用交叉增益调制效应及对单周期振荡的微波锁频效应,可从光时分复用信号中提取出波长转换的分路光时钟.采用一个FP半导体激光器作为全光分路时钟提取及波长转换器,数值模拟实现了从波长为1555 nm、速率为2×20 Gb/s的光时分复用信号中提取出波长转换为1550 nm、重复频率为20 GHz的分路光时钟,实验完成了从波长为155024 nm、重复频率为1236 GHz光脉冲信号中提取出相位噪声为-105 dBc/Hz的波长为154591 nm、重复频率618 GHz的分频光时钟.此外还详细研究了注入光功率、波长失谐、FP激光器偏置电流及纵模选择对光时钟提取的影响,实验结果和数值模拟结果符合.该方法在光时分复用混合波分复用通信系统中实现全光解复用及波长路由有着重要的应用价值. 关键词： 波长转换 时钟提取 光注入 非线性动力学     

基于稳定同位素标记与质谱分析的蛋白质定量算法研究进展

蛋白质定量研究已成为蛋白质组学的热点,它是疾病相关生物标志物发现的重要途径.基于稳定同位素标记的质谱分析技术是蛋白质定量最常用的方法之一.随着实验方法的发展和改进,定量数据处理方法也在不断更新与完善.一般来说,定量数据处理包括四步:搜库鉴定、图谱定量信息提取与计算、肽段丰度比计算和蛋白质丰度比计算及差异显著性分析,其中后三步是数据处理的核心.目前,后三步中每步都有多种可选算法,这些算法一般都是针对特定实验技术而提出的,缺乏深入的工作对它们进行系统比较和优化.为此,在总结目前主要实验技术方法的基础上,论述了定量算法的现状和存在问题,并针对一些问题提出了可行的解决办法.     

α-环糊精主客体识别超分子水凝胶的制备及其宏观流变性能构建过程研究

采用7 wt%的α-环糊精(α-CD)溶液和5 wt%的甲氧基聚乙二醇甲基丙烯酸酯均聚物(PMPEGA-2000)溶液制备了α-CD/PMPEGA-2000超分子水凝胶,并对其形貌、结构、形成条件和宏观流变学性能构建过程进行了表征和研究。结果表明,体积比不低于1.5:1是两种溶液混合后形成凝胶的必要条件;当体积比为2:1时,形成的凝胶黏度最大。热重分析、X射线粉末衍射分析和扫描电镜结果表明,该凝胶是基于α-CD与PMPEGA-2000之间的主客体识别所形成,具有三维网络结构。光学微流变分析结果显示,该凝胶宏观流变性能的构建过程实则是凝胶内部主客体识别交联点不断增多,网络结构强度不断增强的过程。该过程始于α-CD溶液与PMPEGA-2000溶液混合后的8′36′′,在64′00′′后基本完成,耗时约55′24′′。     

胍盐离子液体捕获CO2温室气体的机理

通过量子力学与分子动力学对胍盐离子液体的模拟表明,胍阳离子与氯负离子之间存在较强的相互作用,其相互作用能约为-109．216kcal／m01．从能量与几何分布可见,两种空间分布方式中最稳定构象为Middle作用模式．径向分布函数也验证了这一结论．C02含量的不断增加并没有对离子液体的结构产生影响,而是被离子液体的空腔捕获．     

基于模拟植物生长算法的协作研发网络决策优化模型

在协作研发网络决策中,合理的投资组合可使企业获得理想的收益。企业协作研发网络的投资组合是多方博弈后的结果,利用模拟植物生长算法构建的优化模型可以分析企业在网络中投资组合的博弈过程。通过模拟植物生长算法计算得到的全局最优解和局部最优解是企业协作研发决策投资组合的最优决策集。企业可以根据策略集调整自身的投资方式,制定最优的决策方案。     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

Polar Dependence of Threading Dislocation Density in GaN Films Grown by Metal-Organic Chemical Vapor Deposition

We investigate the threading dislocation(TD) density in N-polar and Ga-polar GaN films grown on sapphire substrates by metal-organic chemical vapor deposition.X-ray diffraction results reveal that the proportion of screw type TDs in N-polar GaN is much larger and the proportion of edge type TDs is much smaller than that in Ga-polar.Transmission electron microscope results show that the interface between the AlN nucleation layer and the GaN layer in N-polar films is smoother than that in Ga-polar films,which suggests different growth modes of GaN.This observation explains the encountered difference in screw and edge TD density.A model is proposed to explain this phenomenon.     

空间激光通信最新进展与发展趋势

空间激光通信凭借其带宽优势,成为未来高速空间通信不可或缺的有效手段,是近年来国际上的研究热点。本文详细介绍了美国、欧洲和日本在空间激光通信技术领域的最新研究进展和未来发展规划,总结了国内外空间激光通信演示计划的主要参数指标。通过对空间激光通信最新研究计划的分析,归纳出空间激光通信高速化、深空化、集成化、网络化、一体化5个发展趋势,以及需要突破的高阶调制、高灵敏度探测、多制式兼容、"一对多"通信等关键技术。为我国激光通信设备及相关研究提供借鉴和参考。