面向化妆品产业升级的江南大学应用化学专业建设思考与实践

基于化妆品产业发展前景和江南大学轻工特色优势、应用化学专业基础,通过教育部新工科项目"地方(行业)高校化学类专业应对产业变化升级改造的研究与实践"实施,对应用化学专业进行了系统性的升级改造。在调研分析的基础上,首先更新了专业定位和培养目标,进而确定课程体系、加强课程建设,以实现特色更鲜明、基础更扎实、素质更全面。针对新工科对人才培养的新要求,在多学科融合、多角度协同以及紧密结合产业方面形成了一些做法。从人才培养视角解决化妆品产业的发展难题,抢占科技制高点,将为人类社会进步发挥独特的作用。     

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

A novel 1200 V SiC super-junction (SJ) MOSFET with a partially widened pillar structure is proposed and investigated by using the two-dimensional numerical simulation tool. Based on the SiC SJ MOSFET structure, a partially widened P-region is added at the SJ pillar region to improve the short-circuit (SC) ability. After investigating the position and doping concentration of the widened P-region, an optimal structure is determined. From the simulation results, the SC withstand times (SCWTs) of the conventional trench MOSFET (CT-MOSFET), the SJ MOSFET, and the proposed structure at 800 V DC bus voltage are 15 μs, 17 μs, and 24 μs, respectively. The SCWTs of the proposed structure are increased by 60% and 41.2% in comparison with that of the other two structures. The main reason for the proposed structure with an enhanced SC capability is related to the effective suppression of saturation current at the high DC bias conditions by using a modulated P-pillar region. Meanwhile, a good Baliga's FOM ($BV^{2}/R_{\rm on}$) also can be achieved in the proposed structure due to the advantage of the SJ structure. In addition, the fabrication technology of the proposed structure is compatible with the standard epitaxy growth method used in the SJ MOSFET. As a result, the SJ structure with this feasible optimization skill presents an effect on improving the SC reliability of the SiC SJ MOSFET without the degeneration of the Baliga's FOM.     

低剂量吉西他滨持续静脉滴注在晚期非小细胞肺癌维持治疗中的应用

目的：观察一线诱导化疗后低剂量吉西他滨持续静脉滴注维持化疗治疗晚期非小细胞肺癌（NSCLC）的疗效和安全性。方法对收治的66例初治ⅢB/Ⅳ期NSCLC患者,采用吉西他滨1000mg/m2（第1、8天）联合顺铂75mg/m2（分3d使用）方案诱导化疗,21d为1个周期。4个周期后有效或稳定的36例按2：1随机分为维持组（24例）和观察组（12例）,维持组予低剂量吉西他滨（250mg/m2）6h持续静脉滴注,第1、8天使用,21d为1个周期,维持至疾病进展或患者对化疗毒性不能耐受。观察组停止化疗,观察直至疾病进展。结果维持组和观察组至疾病进展时间（TTP）分别为6.2个月和4.8个月（P=0.039）;中位总生存时间分别为13.1个月和10.8个月（P=0.667）。维持化疗不良反应较轻微,主要表现为中性粒细胞、血小板数降低、贫血及恶心、呕吐。结论常规剂量吉西他滨联合顺铂一线化疗后序贯低剂量吉西他滨持续静脉滴注维持化疗安全、有效,应可进一步扩大样本量行研究是否有总生存时间的获益。     

手性磺酰化氨基酸酰胺催化二乙基锌与芳香醛不对称加成反应

制备了一种磺酰化氨基酸和环己基胺制备的(S)-N-环己基-3-苯基-2-(对甲基苯磺酰胺)-丙酰胺(1e)手性配体,将其用于催化二乙基锌与系列芳香醛对映选择性加成反应。15mol%该催化剂能够对含有吸电子基团、供电子基团,不同位阻的芳香醛均有较好的效果,能够在比较温和的条件下获得最高达88%ee和中等程度的产率。     

一种四元共聚物磷酸盐粘土稳定剂的合成与性能研究

以丙烯酰胺(AM)、丙烯酸(AA)、(1-二甲氨基)-烯丙基磷酸(DMAAPA)和N-烯丙基油酰胺(CON)为原料,制备了一种水溶性磷酸盐共聚物AM/AA/DMAAPA/CON。确定了最佳合成条件:AM:AA:DMAAPA:CON=69.6:30.0:0.2:0.2(wt%)、pH=7、引发剂加量为0.2 wt%、单体浓度20 wt%、聚合反应温度40℃。对共聚物进行了IR和NMR表征。该聚合物表现出较好的增粘性、抗剪切、耐温和耐盐性能;0.8 wt%的共聚物溶液防膨率达到80.12%,与1.0 wt%的KCl复配后,防膨率达到96.54%。     

准-1幂零群

首先给出了准-A幂零群的一个刻画,然后讨论了它与幂零群的关系,最后探讨了准-1幂零群的重要性质.     

引入新元巧解题

学习数学要重点学习数学方法与数学思想,且数学方法与思想贯穿整个学习过程.换元法是很重要的数学方法,应用它可以打破常规解题,化繁为易,化不通为可行.本文举例说明如下.     

中药土鳖虫中Ca、Mg、Zn和Mn 4种微量元素的含量测定

本文采用HNO3和HClO4消解土鳖虫样品,火焰原子吸收光谱法测定其中Ca、Mg、Zn、Mn含量。方法简单,精密度高,加标回收率在96.86%—102.46%之间,相对标准偏差(RSD)小于2.36%,结果令人满意。     

80keV N离子注入对ZnO薄膜结构的影响

室温下用80keVN离子注入ZnO薄膜样品,注量分别为5.01014,5.01015和5.01016ions/cm2,然后用X射线衍射和透射电镜技术对样品的结构特性进行了表征。实验结果表明,由高度(002)择优取向的致密柱状晶构成的薄膜中,注入5.0×1015ions/cm2时,观测到缺陷生成和局域无序化现象,但薄膜总体结构仍保持柱状晶和(002)择优取向;随着注量的增大,晶格常数c和压应力呈增大趋势。对注入N离子对ZnO薄膜结构特性的影响机理进行了简单的讨论。     

Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures

The electrical characteristics of W/4H-SiC Schottky contacts formed at different annealing temperatures have been measured by using current-voltage-temperatures(I-V -T) and capacitance-voltage-temperatures(C-V -T) techniques in the temperature range of 25℃-175℃. The testing temperature dependence of the barrier height(BH) and ideality factor(n) indicates the presence of inhomogeneous barrier. Tung's model has been applied to evaluate the degree of inhomogeneity, and it is found that the 400℃ annealed sample has the lowest T0 of 44.6 K among all the Schottky contacts. The barrier height obtained from C-V -T measurement is independent of the testing temperature, which suggests a uniform BH.The x-ray diffraction(XRD) analysis shows that there are two kinds of space groups of W when it is deposited or annealed at lower temperature(≤500℃). The phase of W_2C appears in the sample annealed at 600℃, which results in the low BH and the high T_0. The 500℃ annealed sample has the highest BH at all testing temperatures, indicating an optimal annealing temperature for the W/4H-SiC Schottky rectifier for high-temperature application.