Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AIGaN Schottky Contacts

Al0.2 Ga0.8N/GaN samples are grown by metalorganic chemical vapour deposition （MOCVD） method on （0001） sapphire substrates. A 10nm-thick Ni layer is deposited on AlGaN as the transparent Schottky contact. The effect of postannealing in oxygen ambient on the electrical properties of Ni/AlGaN is studied by current-voltage- temperature （I-V-T） measurement. The annealing at a relatively low temperature of 300℃ for 90 s results in a decrease of the ideality factor from 2.03 to 1.30 and an increase of the Schottky barrier height from 0.77eV to 0.954 e V. The I-V-T analysis confirms the improvement originated from the formation of NiO, a layer with higher resistance, which could passivate the surface states of AlGaN and suppress the tunnelling current. Furthermore, the annealing also leads to an increase of the transmittance of the contacts from 57.5% to 78.2%, which would be favourable for A1GaN-based photodetectors.     

钨等离子体平均离化度研究

用SHML模型计算了在局域热力学平衡条件下钨等离子体在温度为0.3～10keV、密度为0.001～0.1 g.cm-3范围内的平均离化度,研究了钨等离子体平均离化度随温度、密度的变化规律.结果表明,钨等离子体的平均离化度随着密度的增加而减小,随着温度的升高而增大,并且在增大的过程中出现了三个平台.研究了电离势对离化度的...     

Different temperature dependence of carrier transport properties between AlxGal-xN/InyGal-yN/GaN and Alx Gal-xN/GaN heterostruct ures

The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures is higher than that in Alo.25Gao.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Gao.75N/CaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the Iny Can-yN/GaN heterointerface induced by the compressive strain in the InyCal-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

金属有机化合物气相外延生长GaN薄膜的电子微结构研究

研究了金属有机化合物气相外延(MOVPE)方法在(0001)氧化铝基底上生长的GaN薄膜的微结构,目的在于解释GaN缓冲层在二步法生长过程中的作用及其对外延层晶体质量的影响.在缓冲层中观察到了高密度的结构缺陷,并发现了两种晶体结构(立方和六角)的GaN.进而对两种结构GaN的成因进行讨论,并对缓冲层和外延层中结构缺陷的关系进行了研究.     

Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template

Epitaxial evolution of buried cracks in a strain-controlled AlN/GaN superlattice interlayer(IL) grown on GaN template, resulting in crack-free AlGaN/GaN multiple quantum wells(MQW), was investigated. The processes of filling the buried cracks include crack formation in the IL, coalescence from both side walls of the crack, build-up of an MQW-layer hump above the cracks, lateral expansion and merging with the surrounding MQW, and two-dimensional step flow growth.It was confirmed that the filling content in the buried cracks is pure GaN, originating from the deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms into the cracks plays a key role in the filling the buried cracks.     

关于一类非线性发展方程整体解的存在性问题

本文研究一类模拟非线性弹性杆的纵振动的非线性发展方程的初边值问题，证明了其整体解的存在性、唯一性、光滑性及在一定条件下，整体解的不存在性。     

具有阻尼项的非线性波动方程的初值问题

本文研究具有阻尼项的非线性波动方程的初值问题ｕｔｔ－２ｂｕｘｘｔ＋ａｕｘｘｘｘ＝β（ｕｘ＾ｎ）ｘ,;ｕ（ｘ,０）＝ψ（ｘ）,ｕｔ（ｘ,０）＝ψ（ｘ）,其中ｂ〉０,β≠０为任意实数,ｎ≥２为整 当ａ≠ｂ＾２,ψ∈Ｌ１（Ｒ）∩Ｈ＾２（Ｒ）,ψ∈Ｋ１（Ｒ）∩Ｌ３（Ｒ）时,上述问题存在唯一的整体光滑解。     

Initial value problem for a class of nonlinear pseudo-hyperbolic equations

The existence of global weak solutions to the periodic boundary problem or the initial value problem for the nonlinear Pseudo-hyperbolic equation u_(tt)-[a_1+a_2(u_x)~(2m)]u_(xx)-a_3u_(xxt)=f(x,t,u,u_x) is proved by the method of the vanishing of the additional diffusion terms, Leray-Schauder's fixedpoint argument and Sobolev's estimates,where m≥1 is a natural number and a_i>0(i=1,2,3)are constants.     

一类非线性发展方程初边值问题解的Blow—up

本文利用Fourier变换方法,研究了一类非线性拟双曲方程的初边值问题的解的bolw-up问题,并给出了其解在有限时间内bolw-up的条件。     

一类四阶拟线性波动方程初边值问题的整体解

本文讨论一类四阶拟线性波动方程的第一初边值问题，其中ａｉ＞０为常数（ｉ＝１，２，３）．是给定的光滑函数．利用压缩映象原理，能量型的先验估计及解的延拓，我们证明了该问题的局部解的适定性和正则性，证明了当初始函数充分小时，该问题存在唯一的整体解，并给出了解的衰减估计．