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11.
Influence of core property on multi-electron process in slow collisions of isocharged sequence ions with neon 下载免费PDF全文
Influence of core property on multi-electron process in the collisions of q=6-9 and 11 isocharged sequence ions with Ne is investigated in the keV/u region.The cross-section ratios of double-,triple-,quadruple-and total multi-electron processes to the single electron capture process as well as the partial ratios of different reaction channels to the relevant multi-electron process are measured by using position-sensitive and time-of-flight techniques.The experimental data are compared with the theoretical predictions including the extended classical over-barrier model,the molecular Columbic barrier model and the semi-empirical scaling law.Results show a core effect on multi-electron process of isocharge ions colliding with Neon,which is consistent with the results of Helium we obtained previously. 相似文献
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We present an efficient scheme for sharing an arbitrary m-qubit state with n agents. In our scheme, the sender Alice first shares m Bell states with the agent Bob, who is designated to recover the original m-qubit state. Furthermore, Alice introduces n- 1 auxiliary particles in the initial state |0), applies Hadamard (H) gate and Controlled-Not (CNOT) gate operations on the particles, which make them entangled with one of m particle pairs in Bell states, and then sends them to the controllers (i.e., other n - 1 agents), where each controller only holds one particle in hand. After Alice performing m Bell-basis measurements and each controller a single-particle measurement, the recover Bob can obtain the original unknown quantum state by applying the corresponding local unitary operations on his particles. Its intrinsic efficiency for qubits approaches 100%, and the total efficiency really approaches the maximal value. 相似文献
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Direct visualization of the structural defects in two-dimensional (2D) semiconductors at a large scale plays a significant role in understanding their electrical/optical/magnetic properties, but is challenging. Although traditional atomic resolution imaging techniques, such as transmission electron microscopy and scanning tunneling microscopy, can directly image the structural defects, they provide only local-scale information and require complex setups. Here, we develop a simple, non-invasive wet etching method to directly visualize the structural defects in 2D semiconductors at a large scale, including both point defects and grain boundaries. Utilizing this method, we extract successfully the defects density in several different types of monolayer molybdenum disulfide samples, providing key insights into the device functions. Furthermore, the etching method we developed is anisotropic and tunable, opening up opportunities to obtain exotic edge states on demand. 相似文献
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无论对深入理解电子-原子的作用机制,还是在材料等领域的实际应用,电子轰击原子的内壳电离截面都具有重要意义。当前电子碰撞引起原子内壳电离的实验数据多集中在几十keV 入射能量和中小Z 靶原子,其它数据相对比较缺乏。本工作以能量为1.0 MeV电子轰击Ta 和Au 靶,通过测量靶原子特征X射线的产额,获得其K壳电离截面分别为13.3 和10.1 b,L 壳电离截面分别为554 和338 b。并将实验结果和相应的理论进行了对比,结果显示,本实验测得的K壳电离截面与Casnati、Hombourger 理论值、L 壳电离截面与Scoeld和Born-Bethe 的理论值相符。Accurate experimental data for atomic inner-shell ionization cross-sections by electrons are of basic importance both in understanding inelastic electron-atom interaction and its application. Up to now, most of available data on this process were mainly concentrated on the low and medium Z atoms by the bombardment of low energy electrons. In present experiments K-shell and L-shell ionization cross-sections of Ta and Au in collisions with 1.0 MeV eleltron were determined by measuring the characteristic X-rays emitted from the target atoms. For the present collision systems the K-shell ionization cross-sections were found to be 13.3 and 10.1 b,and the L-shell ionization cross sections were 554 and 338 b, respectively. The measured K-shell ionization cross sections are in reasonable agreement with the theoretic predictions of Casnati and Hombourger, while L-shell ionization cross sections are consistent with the theoretical results of Soc eld and Born-Bethey. 相似文献
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建立了自发噪声谱测量系统来研究稀磁半导体(Ga,Mn)As的电学噪声性质.通过测量(Ga,Mn)As材料的自发噪声谱,发现(Ga,Mn)As的自发涨落会随温度升高而逐渐增大,同时,外加磁场会降低(Ga,Mn)As的自发涨落,这来源于外加磁场导致的(Ga,Mn)As磁畴部分有序化.此外,不同频率的噪声随温度的变化规律有很大差异:当频率低于30 kHz的时候,噪声谱和温度的变化关系和热噪声很相似,但数值上明显大于热噪声的值;当频率在30 kHz左右的时候,噪声大小和温度成线性关系;当频率大于30 kHz以后,在相变点附近噪声大小和温度的关系出现了明显的转折,高频高温噪声的大小和热噪声的理论值非常接近.这些结果有助于深入理解(Ga,Mn)As磁性起源的物理机制.
关键词:
自旋电子学
稀磁半导体
自发涨落谱 相似文献
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We investigate the fair quantum blind signature scheme proposed by Wang and Wen [Wang T Y and Wen Q Y 2010 Chin.Phys.B 19 060307],which uses the fundamental properties of quantum mechanics and the availability of a trusted arbitrator.However,in this paper,we find that the protocol cannot satisfy the property of non-forgeability even under the condition that the trusted arbitrator is totally credible.Moreover,a simple feasible suggestion for improving the protocol is proposed. 相似文献
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利用HIRFL-CSR开展分子离子复合离解研究的可行性分析 总被引:1,自引:0,他引:1
介绍了储存环高精度分子谱学研究的科学意义、 国内外研究现状和利用HIRFL-CSR开展该项研究的优势, 着重论证了HIRFL-CSR分子离子注入实验环的总体设计方案和技术方案。 通过在HIRFL-CSR实验环上增建一条分子离子注入线, 将实验环改造成能兼顾现有物理实验和大分子物理研究的综合性研究平台, 为分子离子复合离解研究提供良好的技术支撑。 特别是质量数大于70的分子离子, 能显著提高其能量分辨。 In the present paper, it is introduced the scientific background and the current status of the high precision spectroscopy of the molecular ions at cooler storage ring. The advantages to study the dissociative recombination(DR) processes using cooler storage ring CSRe are discussed. The physics design,the main parameters of the injection beam line and the injection of the molecular ions into the CSRe and the key techniques are described in detail. With a new injection beam line,HIRFL-CSRe will be reconstructed to a multi discipline research platform,offering good opportunities for the study of DR processes of molecular ions,especially for that of the molecular ions of m>70 amu with much improved resolution. 相似文献
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采用高效液相色谱结合库仑阵列多电极检测器体系(HPLC-ECD)建立了一套操作简便、高效、快速测定羟自由基的方法,并探究了检测的灵敏性,浓度和响应因子之间的线性关系,系统的稳定性等.2,3-二羟基苯甲酸(2,3-DHBA)、 2,5-二羟基苯甲酸(2,5-DHBA)以及水杨酸(SA)的相关系数分别为0.9999、 0.9996、 0.9968.2,3-DHBA和2,5-DHBA的检出限都低于0.1 ng/mL,SA的检出限均低于10 ng/mL,各种物质的方法回收率为100.5%~102.9%. 相似文献