Controlling hyperchaos in planar systems by adjusting parameters

IntroductionIn 1 990 ,Ott,GrebogiandYorke (OGY)introducedtheconceptofcontrolofchaosandgaveamethodforcontrollingchaos,knownastheOGYmethod[1].AfterOGY ,manyothermethodsforcontrollingchaoshavebeendeveloped[2 - 8].Otherrelatedtopics,suchasnoiseeffectsandoptimizationofthecontrol,havealsobeeninvestigated[9- 12 ].TheOGYmethodconsidersthemapξn+ 1=Fp(ξn) ,ξ∈R2 ,wherep∈Risaparameter,whichhasasaddleatacertainvalueoftheparameter.Thereforethereareaone_dimensionalstablemanifoldandaone_dimension…     

多环化合物中共轭双键13C NMR化学位移计算

介绍多环化合物中共轭双键¹³C NMR化学位移计算.     

石墨炉原子吸收光谱法测定硒的条件研究

硒是人类和动物的必需微量营养元素之一,过量摄入则会引起急性或慢性中毒。近几十年来,人们对硒的测定方法进行了很多有益的探讨,应用较多的有原子荧光法、氢化物发生原子吸收光谱法、石墨炉原子吸收光谱法和中子活化法等,其中石墨炉原子吸收光谱法测定硒具有操作简便、分析速度快、灵敏度高等优点而得到了较快的发展。但由于硒是易挥发元素,     

针-环-板电极结构下大气压He等离子体射流模拟研究

电极结构是影响大气压等离子体射流特性的一个重要因素,研究不同电极结构下等离子体射流的传播行为,对优化射流装置、满足不同的应用需求具有重要意义。本文采用二维轴对称流体模型,模拟研究了针-环-板电极结构下,当环电极所加电压及环电极位置不同时,大气压氦等离子体射流的传播行为。模拟结果显示,在模拟条件下,不论环电极位置如何,环电极接地时射流的电子密度都高于环电极与针电极接相同高压时射流的电子密度,而且射流结构也不受环电极位置影响。但是环电极的位置不同,射流的传播速度和传播距离不同。当环电极距离管口较远时,环电极接地产生的射流传播较快,与环接高压相比,相同时间内获得的射流更长;当环电极距离管口较近时,则环电极与针电极接相同高压产生的射流传播更快。文章中对这些行为形成的物理机制也进行了分析和讨论。     

Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors.It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device.The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail.Under the ON-state stress,the strong electric-field led to degradation of SiNx passivation located in the gate-drain region.As the thickness of SiNx passivation increases,the density of the surface state will be increased to some extent.Meanwhile,it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.     

ZnO/p-Si异质结的深能级及其对发光的影响

利用深能级瞬态谱(DLTS)和光致发光谱(PL),研究了ZnO/pSi异质结的两种不同温度(850℃,1000℃)退火下的深能级中心。发现850℃退火的样品存在3个明显的深中心,分别为E₁=E_v+0.21eV,E₂=E_v+0.44eV,E₃=E_v+071eV;而1000℃退火样品仅存在一个E₁=E_v+021eV的中心,且其隙态密度要比850℃退火的大。同时,测量了两个样品的PL谱。发现1000℃退火可消除一些影响发光强度的深能级,对改善晶格结构,提高样品的发光强度有利。     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

ZnO薄膜的椭偏和DLTS特性

用射频磁控溅射在硅衬底上淀积氧化锌薄膜,并对样品分别作氮气、空气、氧气等不同条件下退火处理。为研究退火气氛对ZnO/Si薄膜中缺陷以及折射率的影响,由深能级瞬态谱(DLTS)以及椭偏测量方法进行了检测。椭偏测量结果表明相对原始生长的样品,在氮气和空气退火使ZnO薄膜折射率下降,但氧气中退火使折射率升高。我们对折射率的这种变化机理进行了解释。DLTS测量得到一个与Zni**相关的深能级中心E1存在,氧气气氛退火可以消除E1能级。在氮气退火情况下Zn*i*的存在对抑制VO引起的薄膜折射率下降有利。     

湖泊沉积物中镉的测定及环境意义研究

建立了氢化物发生-原子荧光光谱法测定湖泊沉积物中镉的分析方法.优化了沉积物中镉的提取条件和测定条件,研究了Cu元素对测定镉的干扰及消除方法.以武汉市涨渡湖为例,通过对总镉和有效态镉的测定揭示了涨渡湖近百年来镉的各形态垂直分布特征.结果表明:自上世纪50年代以来,涨渡湖沉积物中的总镉由深层到表层呈上升趋势,有效态镉变化不大但其含量维持在较高水平.镉的潜在风险性较大.     

Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs

We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors(HEMTs).A 200 W NH₃/N₂ remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration,which results in a decrease in sheet resistance and an increase in output current by 20-30%.Improved current slump,suppressed gate leakage current,and improved Schottk...