A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor （HBT） device （with an emitter area of about 880μm^2） is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm （about 977mW） is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.     

Measuring Grüneisen Parameter of Lead by High Pressure-Jump Method

Using the technology of pressure jump, variations of temperature associated with pressure from 2.4 GPa to 4.6 GPa are measured for lead. The Grfuneisen parameter is calculated from the thermodynamic relation γ =（Ks/T）（aT/aP）s, in which substitution of △T/△P for aT/aP at median pressure is strictly justified. The correction of temperature change is carried out by analysing the experimental data, which makes the process more approaching to an adiabatic condition. The calculated values of △T/ △ P and γ gradually decrease with the increasing pressure. The decrease trend is consistent with the previous work. The γ values in the range of 2-3 GPa are averagely higher than the results of Ramakrishnan et al., indicating the effect of temperature correction. The improved method is promising for measurements of Grfineisen parameter to higher pressure range.     

Resorcinarenes的合成及其边缘化学修饰(Ⅱ)

探讨了烷基醛类（丁醛、戊醛、异丁醛）的Ｒｅｓｏｒｃｉｎａｒｅｎｅｓ的合成及其边缘化学修饰（乙酰化、甲基化），研究了烷基取代基对合成的影响，并用ＩＲ，＾１ＨＮＭＲ，ＭＳ和ＵＶ对这些化合物进行了表征。     

数学教学改革与初等数学现代化中的几个问题

小平同志提出的“教育要面向现代化、面向世界、面向未来”的方针,是我国进行教育数学改革的指导思想。而改革的内容,则主要涉及三个方面:教育体制、教学内容和教学方法,本文试图从一个侧面谈谈数学教学改革和初等数学现代化的问题,也就是如何用现代数学的科学观点去认识、处理初等数学的问题。一.中学数学的双重逻辑结构问题 1.如所周知,数学公理化其完美、奥妙者当首推平面几何,它始自欧几里得而基本上完成于希尔伯特。整个平面几何学象一座辉煌大厦,在少数公理的根基上逻辑地构筑起来,形成了初等几何体系,其思想也逐渐渗透并贯串了代数、三角等学科,这就形成了直到今天我们还在使用的中学数学教材的基本结构,也形成了几百年来人们进行数学思维的三段论式的推理模式。我们的数学教学大纲中所规定的关于能力培     

Adaptive synchronization of a class of fractional-order complex-valued chaotic neural network with time-delay

This paper is concerned with the adaptive synchronization of fractional-order complex-valued chaotic neural networks (FOCVCNNs) with time-delay. The chaotic behaviors of a class of fractional-order complex-valued neural network are investigated. Meanwhile, based on the complex-valued inequalities of fractional-order derivatives and the stability theory of fractional-order complex-valued systems, a new adaptive controller and new complex-valued update laws are proposed to construct a synchronization control model for fractional-order complex-valued chaotic neural networks. Finally, the numerical simulation results are presented to illustrate the effectiveness of the developed synchronization scheme.     

碳包覆铁纳米颗粒的气相爆轰合成北大核心CSCD

以粉末状与气态二茂铁为原料,以氢气和氧气混合气体为爆轰能源,采用气相爆轰法进行了合成碳包覆铁纳米颗粒实验。XRD和TEM实验结果表明,采用两种不同状态的二茂铁,均得到了纳米碳包覆铁颗粒。该包覆颗粒的组成核为铁或铁碳化合物,外层壳主要由石墨碳组成,大部分球形纳米颗粒尺寸分布于5-30 nm之间。通过对比发现,采用气态二茂铁爆轰时,所得到的碳包铁粒度分布较为集中,壳层厚度比较均匀,且粒子具有较好的球形状。最后结合铁碳合金相图,从热处理角度对气相爆轰合成碳包覆铁纳米颗粒的机理进行了分析,得出产物中α-Fe与Fe_3C的形成过程。分析了碳包覆铁纳米颗粒的磁滞回线,其表现出硬磁性与顺磁性双重性质。     

用于MOCVD的金属有机Ba源的制备及性质研究北大核心CSCD

金属有机化学气相沉积法(MOCVD)能够在长的柔性金属基带上连续、快速、均匀沉积YBa2Cu3O7-δ(YBCO)薄膜,因而极具开发价值.MOCVD制备YBCO涂层导体的关键技术之一在于金属有机源(MO)的制备.国外化学试剂公司在以2,2,6,6-4甲基-3,5庚二酮(thd)为配体的MO源上技术较为成熟,并已实现商业化生产,但是价格昂贵,其中Ba(thd)2价格约为700元/g.另外,与Y(thd)3和Cu(thd)2相比,Ba(thd)2挥发性、稳定性差且制备困难.本文对金属有机Ba源的制备、稳定性及真空下的蒸发特性进行了研究.通过引入助配体四乙烯基戊胺,该Ba源的蒸发温度比纯的Ba(thd)2更低,稳定性更高,且成本仅为30元/g,对于降低YBCO高温超导带材的制备成本具有重要意义.采用该Ba源制备的300nm厚YBCO薄膜的Jc达到2.0MA/cm2(77K,0T),表明其具有很好的实用性.     

浅析量子混沌教学

介绍了量子力学中量子混沌教学的重要内容和特点,这对帮助学生理解量子力学理论是非常重要的,同时也有利于培养学生的创新能力.     

球面空间中的Pedoe不等式与张-杨不等式及应用

本文应用距离几何的理论与方法,研究了n维球面空间中n维单形与有限点集的几何不等式问题,建立了球面空间中n维单形一种形式的Pedoe不等式与有限点集一种形式的张-杨不等式,并应用它获得n维球面空间中Veljan-Korchmaros型不等式与Finsler-Hadwinger型不等式.     

托卡马克钨偏滤器基本物理问题

偏滤器是托卡马克中用于排除氦灰和粒子的主要部件,也是发生等离子体与壁材料相互作用最强烈的区域。钨材料被认为是偏滤器的主要候选材料,现在世界上的主要托卡马克装置都开始重点关注钨偏滤器条件下放电特性。长脉冲高功率运行对钨偏滤器的要求包括：沉积到偏滤器靶板能流得到有效控制、钨靶板侵蚀和钨杂质输运的理解、钨杂质聚芯和燃料在钨材料中滞留的抑制。通常要求钨偏滤器具有较强的热辐射能力,从而在能量沉积到偏滤器靶板前将其辐射掉,同时降低入射到靶板的粒子能量。本文回顾了钨偏滤器基本物理问题的研究进展,包括器壁材料对偏滤器能量辐射和脱靶的影响,外加杂质注入脱靶,钨靶板侵蚀的主要影响因素,钨杂质输运和聚芯,边界局域模对钨靶板的影响和燃料在钨靶板中的滞留。