生长素自旋标记物的合成及生物活性

将４－氧－２，２，６，６－四甲基哌啶－１－氧自由基（ＴＭＰＯ）与３种植物生长素拼接在一起，合成了相应的腙，以研究ＴＭＰＯ对生长素活性的影响．所得化合物的结构通过ＩＲ、ＥＳＲ、元素分析或ＭＳ加以证实．初步生物活性测定表明，与母体相比不仅对绿豆幼苗的生长促进作用无影响，在一定条件下还增强了促进生长的活性     

Theoretical Analysis of Interference Nanolithography of Surface Plasmon Polaritons without a Match Layer

Interference nanolithography techniques based on long-range surface plasmon polaritons （LR-SPP） are hardly ever achieved by experiments at present. One key reason is that suitable liquid materials are difflcult to find as the match layer connects the metal film and the resist. We redesign a Kretschmann-Raether structure for interference lithography. A polymer layer is coated under the metal film, and an air layer is placed between the polymer layer and the resist layer. This design not only avoids the above-mentioned question of the match layer, but also can form a soft contact between the polymer layer and the resist layer and can protect the exposure pattern. Simulation results confirm that a device with an appropriately thick polymer layer can form high intensity and contrast interference fringes with a critical dimension of about λ/7 in the resist. In addition, the fabrication of the device is very easy.     

Co(1,10-phen·)32+-KIO4-鲁米诺化学发光体系与应用

本文研究了Co(1,10-phen·)32+配合物对KIO4氧化鲁米诺所产生的强化学发光反应.以1,10-phen·为配位体时,Co(Ⅱ)的检出限为8×10-8g/L,工作曲线响应浓度范围在1×10-6~1×10-4g/L,测定1×10-4g/LCo(Ⅱ)离子的相对标准偏差为2.5%.配合物化学发光法检测啤酒、维生素B12针剂中微量Co(Ⅱ)可获得满意结果.     

一维随机激光器中准态模的饱和特性研究

针对随机激光器的半经典理论是应用电磁场时域有限差分法数值求解半经典随机激光模型方程组，基于半经典理论数值研究了一维随机激光器中准态模式的饱和特性，获得了不同准态模的空间分布和频谱分布图。计算结果分析显示：准态模式的某些特征参数如局域程度将会影响系统的饱和特性。利用这一结果，可以通过单频抽运方法选择具有低阈值、高饱和强度的准态模式作为整个激光系统的稳态输出模式。     

三维非线性有限元与弹性边界元耦合数值方法

本文系统地讨论了以下三个问题:(1) 有限元与边界元耦合中的几个数值问题,其中包括:边界积分方程的凝聚、等效刚度矩阵的对称化及面力不连续的处理;(2) 弹塑性有限元与弹性边界元的耦合;(3) 弹粘塑性有限元与弹性边界元的耦合及数值计算稳定性条件。     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

黑腔端置靶辐照不均匀性分析

提供一种解析方法来研究激光加热黑腔所产生的平面辐射场的不均匀度与平面靶大小和位置的关系,解析结果与数值模拟结果进行了比较,两者的曲线形状基本一致,辐照不均匀度最小值的位置也是一致的。并用此方法给出了能产生有最小辐照不均匀度的平面辐射场的腔靶尺寸的范围。     

相对论电子束真实发射度在线磁扫描测量系统

介绍了清华大学研制的相对论电子束（４～１０ＭｅＶ）真实发射度的测量系统，利用该系统测量了４ＭｅＶ驻波电子直线加速器的真实发射度，并且研究了该系统的测量误差和测量范围，实践表明。     

氢离子辐照纯钒中形成的位错环

钒合金作为聚变堆候选材料, 其辐照损伤行为一直是关注的重点. 研究辐照时形成的位错环的性质, 其意义在于揭示纯钒中辐照空洞的长大机理. 这种机理表现为不同类型位错环对点缺陷吸收的偏压不同, 从而影响金属的辐照肿胀. 本文利用加速器对纯钒薄膜样品进行氢离子辐照, 然后, 利用透射电镜的inside-outside方法分析氢离子辐照所形成的位错环的类型. 结果表明, 在氢离子辐照纯钒中没有发现柏氏矢量b=<110>的位错环, 只有柏氏矢量b=1/2<111>和b=<110>的位错环, 这两种位错环的惯性面处于{110}-{112}之间. 能确定性质的位错环全部为间隙型位错环, 未发现空位型位错环.     

Modelling of Laser—Generated Guided Waves in Bonded Plates with a Weak Interface by the Two—Layer Normal Mode Expansion Method

The two-layer normal mode expansion method is employed to analyse the laser-generated elastic guided waves in bonded plates accounting for the adhesive bond layer in terms of a weak interface with the spring model.The sensitivity of dispersion and transient characteristics of the guided wave to the stiffness coefficients characterizing the cohesive quality is analysed in details.This Method provides a new prominsing way for the characterization of the cohesive quality in bonded plates.