排序方式: 共有87条查询结果,搜索用时 182 毫秒
51.
在酸性水溶液中,分别在金属Ga和Cu/In衬底上进行了Ga电沉积的研究。用循环伏安法研究了导电盐、pH值对电沉积Ga的影响。系统研究了Ga的沉积过程,发现Ga会逐渐向薄膜内部扩散,在Cu/In界面上与CuIn合金反应生成CuGa2合金。针对Cu/In薄膜和Ga薄膜是活泼金属的特点,在溶液中加入三乙醇胺有效地保护了Cu/In薄膜和Ga金属薄膜不被氧化,并且提高了Ga沉积的电流效率。在Cu/In薄膜上制备出了均匀光亮的金属Ga薄膜。对电沉积出Cu-In-Ga预置层进行了硒化处理,得到了质量较好的Cu(In1-xGax)Se2(CIGS)薄膜,并制备了太阳电池。电池效率达到了9.42%。 相似文献
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Cu(In,Ga)Se2 Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition
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The structural and electrical properties of Cu(In,Ga)Se2 (CIGS) films grown on polyimide (PI) sheet using the three-stage co-evaporation process are investigated by x-ray diffraction spectra (XRD), scanning electron microscopy (SEM), Raman spectra, and Hall effect measurements, respectively. The results show that the properties of CIGS films on PI sheet are strongly dependent on the compositional ratio of Cu/(In+Oa) (Cu/Ⅲ). In contrast to the non-stoichiometric CIGS films, stoichiometric CIGS films show better structural and electrical properties, such as a relatively larger grain size, lower resistivity and higher carrier concentration. The flexible CIGS solar cells on PI sheet with the conversion efficiencies of 9.7% and 6.6% are demonstrated for the CIGS absorber layer with Cu/Ⅲ of 0.96 and 0.76, respectively (active area, 0.20cm^2). The cell efficiency for Cu-poor CIGS films is limited by a relatively lower open circuit voltage and fill factor. 相似文献
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CIGS thin films are deposited by sputtering and selenization. The synthesis
of semiconducting polycrystalline thin films and characteristics of devices
based on the CIGS absorbing layers are investigated. Their microstructures
are characterized by x-ray diffraction and Raman spectroscopy. The results
reveal that there exist metallic Cu2-xSe compounds in CIGS
film surfaces and the compounds are thought to be responsible for the
degradation of the open circuit voltage of solar cells. The optimization of
selenization temperature profile and copper content in the precursor
surfaces is studied, concluding that the conversion efficiency may be
improved by removing metallic Cu2-xSe compounds from the surfaces of
CIGS thin films. 相似文献
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从1976年开始,非晶硅太阳电池有了惊人飞速的发展。但是至今它的严重的光致衰退一直妨碍着它的实际应用.本文首先回顾了非晶硅太阳电池的发展历史,提出了妨碍非晶硅电池发展的关键问题──稳定效率问题,介绍了提高稳定效率的措施,同时介绍了CulnSe_2/CdS太阳电池等新型电池. 相似文献
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Developments of High-Efficiency Flexible Cu(In,Ga)Se2 Thin Film Solar Cells on a Polyimide Sheet by Sodium Incorporation
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We present the fabrication of flexible Cu(In,Ga)Se2 (CIGS) solar cells on a polyimide (PI) sheet with and without Na incorporation. A sodium element is incorporated into the CIGS absorber by using a NaF precursor after Mo back contact deposition. X-ray diffraction patterns show that the (112) preferred orientation of the as-grown GIGS films is decreased by Na incorporation. The secondary phase of (Inx,Gal-x)zSe3 is observed for the CIGS films with Na. There is no significant difference in the grain size with and without Na incorporation from surface and cross-sectional SEM images. Additionally, the increase of carrier concentration and decrease of resistivity of CIGS absorber are induced by Na doping. Finally, the flexible CIGS solar cells on PI sheets with efficiency close to 11%, containing Na, are achieved. The improvement of cell efficiency can be attributed to the modified electrical properties of the CIGS film by Na incorporation. 相似文献
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Dynamic scaling and optical properties of Zn(S,O, OH) thin film grown by chemical bath deposition
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The scaling behavior and optical properties of Zn(S, O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements, scanning electron microscopy and optical properties measurement. From the scaling behaviour, the value of growth scaling exponent β , 0.38±0.06, was determined. This value indicated that the Zn(S, O, OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect. Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions. The energy band gap of the film deposited with 40 min was around 3.63 eV. 相似文献